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MTD2N20-VB Product details
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Product Introduction
**MTD2N20-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for medium power and high voltage applications. Its maximum drain-source voltage (VDS) is 200V, which can withstand relatively high voltage environments and is suitable for a variety of power electronic equipment. The gate-source voltage (VGS) range of the device is ±20V, ensuring flexible driving capabilities. The threshold voltage (Vth) is 3V, which means that it can be turned on quickly at a lower gate voltage, improving the switching response speed. Its on-resistance (RDS(ON)) is 850mΩ, which performs well at a gate voltage of 10V and can effectively reduce conduction losses. The maximum drain current (ID) is 5A, which is suitable for a variety of application scenarios. MTD2N20-VB uses Trench technology, has superior switching characteristics and thermal performance, and is widely used in power management, switching power supplies and other high-voltage control fields.
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**MTD2N20-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for medium power and high voltage applications. Its maximum drain-source voltage (VDS) is 200V, which can withstand relatively high voltage environments and is suitable for a variety of power electronic equipment. The gate-source voltage (VGS) range of the device is ±20V, ensuring flexible driving capabilities. The threshold voltage (Vth) is 3V, which means that it can be turned on quickly at a lower gate voltage, improving the switching response speed. Its on-resistance (RDS(ON)) is 850mΩ, which performs well at a gate voltage of 10V and can effectively reduce conduction losses. The maximum drain current (ID) is 5A, which is suitable for a variety of application scenarios. MTD2N20-VB uses Trench technology, has superior switching characteristics and thermal performance, and is widely used in power management, switching power supplies and other high-voltage control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD2N20-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 850mΩ @ VGS=10V |
| **Drain current (ID)** | 5A |
| **Technology** | Trench |
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| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD2N20-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 850mΩ @ VGS=10V |
| **Drain current (ID)** | 5A |
| **Technology** | Trench |
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Domain and module applications：
Applications and module examples
1. **Switching power supply**
The MTD2N20-VB is suitable for use in switching power supplies (SMPS). As a switching element, it can efficiently handle high voltages of 200V and medium power (maximum drain current 5A). Its low on-resistance helps reduce switching losses and improve overall conversion efficiency.
2. **Power management system**
In power management systems, this MOSFET can be used for current control and voltage regulation. Its flexible gate drive capability enables it to perform well in high-voltage applications, ensuring system stability and efficiency.
3. **Motor drive**
The device is suitable for motor drive applications, such as in power tools and household appliances. The MTD2N20-VB can reliably control the switching state of the motor under high voltage environments, improving drive efficiency and response speed.
4. **LED drive circuit**
The MTD2N20-VB is also very suitable for LED drive circuits, especially in high-power lighting applications. Its low on-resistance can effectively reduce energy consumption and improve the driving performance and service life of LEDs.
5. **Automotive Electronic Applications**
This MOSFET also has broad application prospects in automotive electronic systems, such as battery management systems and high-voltage electrical equipment. Its high voltage tolerance enables stable operation in complex electrical environments, ensuring the safety and reliability of the vehicle's electrical system.
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In summary, **MTD2N20-VB** is a high-performance N-channel MOSFET suitable for multiple fields such as switching power supplies, power management systems, motor drives, LED drive circuits and automotive electronics. Its excellent electrical characteristics and reliability make it an ideal choice for high-voltage applications.
1. **Switching power supply**
The MTD2N20-VB is suitable for use in switching power supplies (SMPS). As a switching element, it can efficiently handle high voltages of 200V and medium power (maximum drain current 5A). Its low on-resistance helps reduce switching losses and improve overall conversion efficiency.
2. **Power management system**
In power management systems, this MOSFET can be used for current control and voltage regulation. Its flexible gate drive capability enables it to perform well in high-voltage applications, ensuring system stability and efficiency.
3. **Motor drive**
The device is suitable for motor drive applications, such as in power tools and household appliances. The MTD2N20-VB can reliably control the switching state of the motor under high voltage environments, improving drive efficiency and response speed.
4. **LED drive circuit**
The MTD2N20-VB is also very suitable for LED drive circuits, especially in high-power lighting applications. Its low on-resistance can effectively reduce energy consumption and improve the driving performance and service life of LEDs.
5. **Automotive Electronic Applications**
This MOSFET also has broad application prospects in automotive electronic systems, such as battery management systems and high-voltage electrical equipment. Its high voltage tolerance enables stable operation in complex electrical environments, ensuring the safety and reliability of the vehicle's electrical system.
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In summary, **MTD2N20-VB** is a high-performance N-channel MOSFET suitable for multiple fields such as switching power supplies, power management systems, motor drives, LED drive circuits and automotive electronics. Its excellent electrical characteristics and reliability make it an ideal choice for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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