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MTD2955VT4G-VB Product details
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MTD2955VT4G-VB Product Introduction
MTD2955VT4G-VB is a **single P-channel power MOSFET**, using **TO252 package**, designed for low-voltage applications. Its maximum drain-source voltage (**VDS**) can reach -60V, supports ±20V gate-source voltage (**VGS**), and the turn-on voltage (**Vth**) is -1.7V. The on-resistance (**RDS(ON)**) of this MOSFET is 100mΩ at VGS=4.5V and 90mΩ at VGS=10V. It has excellent conduction performance and low power loss, and is suitable for high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description of MTD2955VT4G-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single P-channel | For high-side switch and power management|
| **VDS (drain-source voltage)** | -60V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | -1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 100mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 90mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | -30A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications|
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Domain and module applications：
MTD2955VT4G-VB Application Fields and Module Examples
1. **Power Management Circuit**
MTD2955VT4G-VB is suitable for various **power management circuits**, such as switching power supplies, DC-DC converters and regulated power supplies. In these applications, the low on-resistance and high current capability of this MOSFET can effectively reduce energy loss and improve system efficiency.
2. **High-side switch**
This MOSFET can be used as a **high-side switch** in load control circuits, which can provide a stable connection between the load and the power supply, and is particularly suitable for applications such as LED drive and motor control.
3. **Electric Vehicle**
In the power management system of **electric vehicles**, MTD2955VT4G-VB can be used to control the charging and discharging process of the battery pack, ensure the efficiency and safety of the power system, and extend the battery life.
4. **Portable devices**
This MOSFET is suitable for use in power management modules for **portable devices**, such as smartphones, tablets, and other small electronic devices, helping to achieve more compact designs and longer battery life.
5. **Consumer electronics**
The MTD2955VT4G-VB can be used as a power switch in **consumer electronics**, providing reliable power switching, and is suitable for use in audio equipment, televisions, and other home appliances.
In summary, the MTD2955VT4G-VB is a P-channel power MOSFET with high performance and low power consumption, suitable for a variety of electronic devices and systems that require efficient power management.
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