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MTD2955ET4G-VB Product details
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Product Introduction
**MTD2955ET4G-VB** is a high-performance P-channel MOSFET with a TO252 package type, suitable for a variety of low-voltage applications. This MOSFET uses advanced Trench technology, has excellent on-resistance and low gate-source voltage drive requirements, and is suitable for use in a variety of applications such as power management, switching power supplies, load switches, and high-efficiency circuits. Its operating voltage range is -60V, enabling it to handle higher load voltages, while supporting up to -30A of leakage current, making it excellent in high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: MTD2955ET4G-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**:
MTD2955ET4G-VB can be used in switch mode power supplies (SMPS) and DC-DC converters as a switching device to provide efficient energy conversion and management. Its low on-resistance and high withstand voltage characteristics can improve system efficiency and reduce heat loss.
2. **Load switch**:
This MOSFET is suitable for load switch applications. It can effectively control the power switch of the device, provide fast switching response and stable current output, and is widely used in portable devices and consumer electronics.
3. **Electric vehicles**:
In electric vehicles and hybrid vehicles, MTD2955ET4G-VB can be used in motor drive and charging management systems to handle high current and high voltage, improve energy efficiency and system performance.
4. **Industrial equipment**:
This MOSFET is also used in industrial automation and control systems as a power switch to control the load, achieve efficient power control, and meet the needs of various industrial equipment.
5. **LED driver**:
Due to its good switching performance, this MOSFET is also suitable for use in LED lighting drive circuits, which can effectively control the working state of the LED and achieve more efficient lighting solutions.
The excellent performance and wide range of applications of MTD2955ET4G-VB make it an ideal choice in modern electronic design.
Technical support：
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