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MTD1P50E-VB Product details

Product introduction:

MTD1P50E-VB Product Introduction

MTD1P50E-VB is a high-performance single P-channel power MOSFET in a **TO252 package**, designed for high-voltage applications. The device has a drain-source voltage (**VDS**) of up to **-500V**, suitable for demanding power management and switching applications. Its gate-source voltage (**VGS**) can reach ±20V, ensuring good switching performance. The threshold voltage (**Vth**) of MTD1P50E-VB is **-3V**, which enables effective switching under appropriate drive voltage. Its on-resistance (**RDS(ON)**) is **4875mΩ** at VGS of **4.5V** and **3900mΩ** at VGS of **10V**, providing relatively low conduction losses and suitable for high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -500V -3V -2A 3900mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -500V -3V -2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -500V -3V -2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description

| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD1P50E-VB |
| **Package** | TO252 |
| **Configuration** | Single P channel|
| **Drain-source voltage (VDS)** | -500V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -3V |
| **On-resistance (RDS(ON))** | 4875mΩ @ VGS=4.5V |
| | 3900mΩ @ VGS=10V |
| **Drain current (ID)** | -2A |
| **Technology** | Plannar |

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Domain and module applications:

Application fields and module examples

**MTD1P50E-VB** performs well in multiple fields and modules, as shown below:

1. **High-voltage power management**
- This MOSFET can be used in high-voltage power modules, suitable for applications that require high-voltage conversion and switching, such as industrial power supplies and power adapters, to effectively manage power and improve efficiency.

2. **Motor control**
- In motor drive applications, the MTD1P50E-VB can be used to control P-channel motors and provide stable reverse current, suitable for motor drive systems of power tools and home appliances.

3. **Battery Management System (BMS)**
- This MOSFET can optimize the battery charging and discharging process in the battery management system, especially in high-voltage battery packs, to ensure battery safety and high efficiency, suitable for electric vehicles and energy storage systems.

4. **Switching Power Supply**
- In a switching power supply, the MTD1P50E-VB can be used as a switching element to achieve efficient power conversion, especially in applications that require higher load currents.

5. **LED Driver**
- This device is also suitable for LED driver circuits, which can stably control the current of LED modules, ensure uniform brightness and extend the service life of LEDs, and is widely used in lighting and display equipment.

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Through its excellent performance and wide applicability, the MTD1P50E-VB has become an important component in modern high-voltage electronic design and is widely used in various power supplies and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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