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MTD1N80E-VB Product details
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Product Introduction
**MTD1N80E-VB** is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V, which can withstand high voltage environments and is suitable for various power electronic devices. The gate-source voltage (VGS) range of this device is ±30V, providing flexible gate drive capability. The threshold voltage (Vth) is 3.5V, ensuring fast turn-on at a reasonable gate voltage. Its on-resistance (RDS(ON)) is 2600mΩ, which can effectively control the conduction loss at a gate voltage of 10V. The maximum drain current (ID) is 2A, making it suitable for a variety of medium power applications. MTD1N80E-VB adopts SJ_Multi-EPI technology, has superior thermal performance and switching characteristics, and is widely used in high voltage power supplies, switching power supplies and other high voltage control fields.
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**MTD1N80E-VB** is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) reaches 800V, which can withstand high voltage environments and is suitable for various power electronic devices. The gate-source voltage (VGS) range of this device is ±30V, providing flexible gate drive capability. The threshold voltage (Vth) is 3.5V, ensuring fast turn-on at a reasonable gate voltage. Its on-resistance (RDS(ON)) is 2600mΩ, which can effectively control the conduction loss at a gate voltage of 10V. The maximum drain current (ID) is 2A, making it suitable for a variety of medium power applications. MTD1N80E-VB adopts SJ_Multi-EPI technology, has superior thermal performance and switching characteristics, and is widely used in high voltage power supplies, switching power supplies and other high voltage control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD1N80E-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 800V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V |
| **Drain current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI |
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| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD1N80E-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 800V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V |
| **Drain current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI |
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Domain and module applications：
Applications and module examples
1. **High-voltage power management system**
The MTD1N80E-VB is ideal for use in high-voltage power management systems, such as in power converters and uninterruptible power supplies (UPS). This MOSFET can efficiently control the transmission of electrical energy and operate stably at voltages up to 800V, ensuring system reliability and efficiency.
2. **Switching power supply**
In a switching power supply (SMPS), the MTD1N80E-VB is a switching element capable of handling high voltage and medium power current (maximum drain current of 2A). Its low on-resistance characteristics keep heat generation low under high-frequency switching conditions, improving overall system efficiency and reliability.
3. **Motor drive**
This MOSFET is suitable for use in motor drive applications, such as in high-voltage power tools and household appliances. The high voltage tolerance of the MTD1N80E-VB enables it to effectively control the switching state of the motor, ensuring efficient and stable drive performance.
4. **LED drive circuit**
In LED drive circuits, the MTD1N80E-VB can be used for power management of high-voltage LED lamps, especially in high-power lighting applications. Its low on-resistance helps reduce energy consumption and heat generation, improving the overall efficiency and service life of LED lamps.
5. **Automotive electronics applications**
This MOSFET is also suitable for automotive electronic control systems such as battery management systems and high-voltage electrical equipment. Its high voltage characteristics ensure stable operation under various driving and environmental conditions, allowing vehicle electronic systems to still work efficiently under high voltage conditions.
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In summary, the **MTD1N80E-VB** is a high-performance N-channel MOSFET that is widely used in many fields such as high-voltage power management, switching power supplies, motor drives, LED drive circuits, and automotive electronics. Its excellent electrical characteristics and reliability make it an ideal choice for high-voltage applications.
1. **High-voltage power management system**
The MTD1N80E-VB is ideal for use in high-voltage power management systems, such as in power converters and uninterruptible power supplies (UPS). This MOSFET can efficiently control the transmission of electrical energy and operate stably at voltages up to 800V, ensuring system reliability and efficiency.
2. **Switching power supply**
In a switching power supply (SMPS), the MTD1N80E-VB is a switching element capable of handling high voltage and medium power current (maximum drain current of 2A). Its low on-resistance characteristics keep heat generation low under high-frequency switching conditions, improving overall system efficiency and reliability.
3. **Motor drive**
This MOSFET is suitable for use in motor drive applications, such as in high-voltage power tools and household appliances. The high voltage tolerance of the MTD1N80E-VB enables it to effectively control the switching state of the motor, ensuring efficient and stable drive performance.
4. **LED drive circuit**
In LED drive circuits, the MTD1N80E-VB can be used for power management of high-voltage LED lamps, especially in high-power lighting applications. Its low on-resistance helps reduce energy consumption and heat generation, improving the overall efficiency and service life of LED lamps.
5. **Automotive electronics applications**
This MOSFET is also suitable for automotive electronic control systems such as battery management systems and high-voltage electrical equipment. Its high voltage characteristics ensure stable operation under various driving and environmental conditions, allowing vehicle electronic systems to still work efficiently under high voltage conditions.
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In summary, the **MTD1N80E-VB** is a high-performance N-channel MOSFET that is widely used in many fields such as high-voltage power management, switching power supplies, motor drives, LED drive circuits, and automotive electronics. Its excellent electrical characteristics and reliability make it an ideal choice for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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