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MTD1N60ET4G-VB Product details
Back to previous pageProduct introduction：
1. MTD1N60ET4G-VB Product Introduction
MTD1N60ET4G-VB is a **single N-channel power MOSFET**, using **TO252 package**, specially designed for high voltage applications. Its maximum drain-source voltage (**VDS**) reaches 650V, supports ±30V gate-source voltage (**VGS**), and the turn-on voltage (**Vth**) is 3.5V. The on-resistance (**RDS(ON)**) of this MOSFET is 3440mΩ at VGS=4.5V and 4300mΩ at VGS=10V. Although its on-resistance is relatively high, its main advantage is its high voltage tolerance, which makes it suitable for circuits requiring high voltage and low current.
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MTD1N60ET4G-VB is a **single N-channel power MOSFET**, using **TO252 package**, specially designed for high voltage applications. Its maximum drain-source voltage (**VDS**) reaches 650V, supports ±30V gate-source voltage (**VGS**), and the turn-on voltage (**Vth**) is 3.5V. The on-resistance (**RDS(ON)**) of this MOSFET is 3440mΩ at VGS=4.5V and 4300mΩ at VGS=10V. Although its on-resistance is relatively high, its main advantage is its high voltage tolerance, which makes it suitable for circuits requiring high voltage and low current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of MTD1N60ET4G-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Power MOSFET in high voltage applications |
| **VDS (drain-source voltage)** | 650V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±30V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3.5V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 3440mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 4300mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 2A | Maximum continuous drain current|
| **Technology** | Plannar | Planar technology for high voltage applications|
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| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Power MOSFET in high voltage applications |
| **VDS (drain-source voltage)** | 650V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±30V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3.5V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 3440mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 4300mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 2A | Maximum continuous drain current|
| **Technology** | Plannar | Planar technology for high voltage applications|
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Domain and module applications：
III. MTD1N60ET4G-VB Application Fields and Module Examples
1. **High-voltage power supply**
MTD1N60ET4G-VB can be used in **switching power supplies** and **DC-DC converters**, especially in applications that need to handle high voltage (such as 650V) and low current (such as 2A), it can provide stable voltage output and is suitable for industrial power supply equipment and high-voltage power supply design.
2. **Power control module**
This MOSFET is suitable for **power control modules**, which can be used to control the switching function in motor drive, power management and high-voltage equipment to ensure safe and reliable operation.
3. **Lighting application**
In **LED lighting** and **other high-voltage lighting solutions**, MTD1N60ET4G-VB can effectively control the power output, provide reliable drive for high-voltage LED lamps, and ensure the efficiency and stability of the lighting system.
4. **Power Tools**
This MOSFET can be used in the power management circuit of **Power Tools** to help manage the charging and discharging process of high-voltage batteries and improve the performance and safety of power tools.
5. **Solar Inverter**
For **Solar Inverter**, the MTD1N60ET4G-VB is able to handle high-voltage DC input from solar panels and efficiently convert it to AC output, suitable for systems that need to convert renewable energy into usable electricity.
In summary, the MTD1N60ET4G-VB is a power MOSFET designed for high-voltage applications, suitable for a variety of electronic and electrical equipment that require high voltage tolerance and stable performance.
1. **High-voltage power supply**
MTD1N60ET4G-VB can be used in **switching power supplies** and **DC-DC converters**, especially in applications that need to handle high voltage (such as 650V) and low current (such as 2A), it can provide stable voltage output and is suitable for industrial power supply equipment and high-voltage power supply design.
2. **Power control module**
This MOSFET is suitable for **power control modules**, which can be used to control the switching function in motor drive, power management and high-voltage equipment to ensure safe and reliable operation.
3. **Lighting application**
In **LED lighting** and **other high-voltage lighting solutions**, MTD1N60ET4G-VB can effectively control the power output, provide reliable drive for high-voltage LED lamps, and ensure the efficiency and stability of the lighting system.
4. **Power Tools**
This MOSFET can be used in the power management circuit of **Power Tools** to help manage the charging and discharging process of high-voltage batteries and improve the performance and safety of power tools.
5. **Solar Inverter**
For **Solar Inverter**, the MTD1N60ET4G-VB is able to handle high-voltage DC input from solar panels and efficiently convert it to AC output, suitable for systems that need to convert renewable energy into usable electricity.
In summary, the MTD1N60ET4G-VB is a power MOSFET designed for high-voltage applications, suitable for a variety of electronic and electrical equipment that require high voltage tolerance and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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