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MTD15N06VLT4G-VB Product details
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1. MTD15N06VLT4G-VB Product Introduction
MTD15N06VLT4G-VB is a high-performance N-Channel MOSFET in a TO252 package, designed for power management and switching applications. The device has a drain-source voltage (VDS) of 60V, which is suitable for medium-voltage power conversion circuits. Its gate-source voltage (VGS) can reach ±20V, providing good gate drive flexibility. The turn-on voltage (Vth) is 1.7V, which allows it to turn on quickly at a lower gate voltage. At VGS = 4.5V, its on-resistance (RDS(ON)) is 85mΩ, and at VGS = 10V, it is 73mΩ, which has low conduction losses, thereby improving the efficiency of the overall system. Its maximum drain current (ID) is 18A, which is suitable for a variety of power management and drive applications. MTD15N06VLT4G-VB adopts **Trench technology**, with fast switching and low power consumption, suitable for various power adapters and motor control systems.
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MTD15N06VLT4G-VB is a high-performance N-Channel MOSFET in a TO252 package, designed for power management and switching applications. The device has a drain-source voltage (VDS) of 60V, which is suitable for medium-voltage power conversion circuits. Its gate-source voltage (VGS) can reach ±20V, providing good gate drive flexibility. The turn-on voltage (Vth) is 1.7V, which allows it to turn on quickly at a lower gate voltage. At VGS = 4.5V, its on-resistance (RDS(ON)) is 85mΩ, and at VGS = 10V, it is 73mΩ, which has low conduction losses, thereby improving the efficiency of the overall system. Its maximum drain current (ID) is 18A, which is suitable for a variety of power management and drive applications. MTD15N06VLT4G-VB adopts **Trench technology**, with fast switching and low power consumption, suitable for various power adapters and motor control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. MTD15N06VLT4G-VB Detailed parameter description
| **Parameter** | **Description and value** |
|-------------------------|---------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throwing voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS = 4.5V |
| | 73mΩ @ VGS = 10V |
| **Drain current (ID)** | 18A |
| **Technology** | Trench |
| **Maximum power consumption (Pd)** | 55W (depending on cooling conditions) |
| **Operating temperature range** | -55°C to 150°C |
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| **Parameter** | **Description and value** |
|-------------------------|---------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throwing voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS = 4.5V |
| | 73mΩ @ VGS = 10V |
| **Drain current (ID)** | 18A |
| **Technology** | Trench |
| **Maximum power consumption (Pd)** | 55W (depending on cooling conditions) |
| **Operating temperature range** | -55°C to 150°C |
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Domain and module applications：
III. MTD15N06VLT4G-VB Application Fields and Modules
The high performance characteristics of MTD15N06VLT4G-VB make it outstanding in many fields and modules. Suitable applications include:
1. **Switching Power Supply**
- Due to its high efficiency and low on-resistance, MTD15N06VLT4G-VB can be widely used in **Switching Power Supply (SMPS)**, providing reliable power solutions for various industrial and consumer equipment.
2. **Motor Control**
- In the motor control system, this MOSFET can be used as the main switching element, which can effectively drive DC motors and is suitable for home appliances, robots and electric vehicles.
3. **LED Drive**
- MTD15N06VLT4G-VB can be used in **LED lighting systems** as a constant current switch to improve the driving efficiency of LEDs. It is widely used in indoor and outdoor lighting.
4. **Battery Management System (BMS)**
- This device is suitable for battery management systems to achieve charge and discharge control to ensure the safety and efficiency of lithium batteries, especially for electric vehicles and energy storage systems.
5. **Inverter Applications**
- MTD15N06VLT4G-VB can also be used in **inverters** to achieve efficient power conversion in renewable energy applications such as solar power generation.
6. **Consumer Electronics**
- The miniaturized design of this MOSFET makes it suitable for use in various **consumer electronic devices**, such as power management modules for smartphones, tablets, and portable charging devices.
In summary, as an efficient N-Channel MOSFET, MTD15N06VLT4G-VB is widely used in various fields such as power management, driving and conversion with its excellent performance to meet the needs of modern electronic devices.
The high performance characteristics of MTD15N06VLT4G-VB make it outstanding in many fields and modules. Suitable applications include:
1. **Switching Power Supply**
- Due to its high efficiency and low on-resistance, MTD15N06VLT4G-VB can be widely used in **Switching Power Supply (SMPS)**, providing reliable power solutions for various industrial and consumer equipment.
2. **Motor Control**
- In the motor control system, this MOSFET can be used as the main switching element, which can effectively drive DC motors and is suitable for home appliances, robots and electric vehicles.
3. **LED Drive**
- MTD15N06VLT4G-VB can be used in **LED lighting systems** as a constant current switch to improve the driving efficiency of LEDs. It is widely used in indoor and outdoor lighting.
4. **Battery Management System (BMS)**
- This device is suitable for battery management systems to achieve charge and discharge control to ensure the safety and efficiency of lithium batteries, especially for electric vehicles and energy storage systems.
5. **Inverter Applications**
- MTD15N06VLT4G-VB can also be used in **inverters** to achieve efficient power conversion in renewable energy applications such as solar power generation.
6. **Consumer Electronics**
- The miniaturized design of this MOSFET makes it suitable for use in various **consumer electronic devices**, such as power management modules for smartphones, tablets, and portable charging devices.
In summary, as an efficient N-Channel MOSFET, MTD15N06VLT4G-VB is widely used in various fields such as power management, driving and conversion with its excellent performance to meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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