中文
English
MTD14N10ET4G-VB Product details
Back to previous pageProduct introduction：
**Product Introduction: MTD14N10ET4G-VB MOSFET**
MTD14N10ET4G-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-efficiency power management and switching applications. This device can withstand **100V drain-source voltage (VDS)** and operate stably under the condition of a maximum **gate-source voltage (VGS) of ±20V**. Its **threshold voltage (Vth) is 1.8V**, ensuring rapid turn-on at a lower gate voltage to meet fast switching requirements.
The on-resistance (RDS(ON)) of this MOSFET is 114mΩ at **VGS=10V**, providing excellent current passing capability, helping to reduce power consumption and heat generation. The **maximum drain current (ID) is 15A**, making it suitable for handling medium load currents and meeting the needs of various electronic applications. Combined with **Trench technology**, the device provides excellent conduction characteristics and thermal management, suitable for key components in modern electronic design.
---
MTD14N10ET4G-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-efficiency power management and switching applications. This device can withstand **100V drain-source voltage (VDS)** and operate stably under the condition of a maximum **gate-source voltage (VGS) of ±20V**. Its **threshold voltage (Vth) is 1.8V**, ensuring rapid turn-on at a lower gate voltage to meet fast switching requirements.
The on-resistance (RDS(ON)) of this MOSFET is 114mΩ at **VGS=10V**, providing excellent current passing capability, helping to reduce power consumption and heat generation. The **maximum drain current (ID) is 15A**, making it suitable for handling medium load currents and meeting the needs of various electronic applications. Combined with **Trench technology**, the device provides excellent conduction characteristics and thermal management, suitable for key components in modern electronic design.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package suitable for heat dissipation and low inductance|
| **Configuration** | Single-N-Channel | Single channel design, suitable for a variety of power switch applications|
| **VDS (drain-source voltage)** | 100V | Suitable for high voltage applications|
| **VGS (gate-source voltage)** | ±20V | Maximum gate control voltage|
| **Vth (threshold voltage)** | 1.8V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance at 10V gate drive voltage|
| **ID (drain current)** | 15A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology, improving electrical performance and heat dissipation |
---
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package suitable for heat dissipation and low inductance|
| **Configuration** | Single-N-Channel | Single channel design, suitable for a variety of power switch applications|
| **VDS (drain-source voltage)** | 100V | Suitable for high voltage applications|
| **VGS (gate-source voltage)** | ±20V | Maximum gate control voltage|
| **Vth (threshold voltage)** | 1.8V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance at 10V gate drive voltage|
| **ID (drain current)** | 15A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology, improving electrical performance and heat dissipation |
---
Domain and module applications：
**Application fields and module examples**
1. **Switching power supply**
MTD14N10ET4G-VB is widely used in switching power supply as the main switching element to control the transmission of electric energy. Its low on-resistance characteristic helps to reduce power consumption and improve power conversion efficiency, and is suitable for AC-DC and DC-DC converters.
2. **Battery charging management**
This MOSFET can be used in battery charging management system as a **charging switch** to effectively control the charging and discharging process of the battery and ensure the safety and efficiency of the charging process.
3. **Motor drive**
In the motor drive circuit, MTD14N10ET4G-VB can be used as a switch controller for the motor, which can achieve efficient motor start and stop, and is suitable for power tools and automation equipment.
4. **LED drive**
This MOSFET can be used as a switching element in the LED drive circuit. Its fast switching characteristics enable it to effectively adjust the brightness of the LED, and is suitable for intelligent lighting systems and stage lighting.
5. **Industrial Control Systems**
In industrial automation, this MOSFET can be used as a load switch to control the working status of various devices and sensors, and is widely used in PLC control systems and robot control systems.
---
MTD14N10ET4G-VB has become an indispensable key component in modern power management and switching circuits due to its excellent performance and diverse application fields.
1. **Switching power supply**
MTD14N10ET4G-VB is widely used in switching power supply as the main switching element to control the transmission of electric energy. Its low on-resistance characteristic helps to reduce power consumption and improve power conversion efficiency, and is suitable for AC-DC and DC-DC converters.
2. **Battery charging management**
This MOSFET can be used in battery charging management system as a **charging switch** to effectively control the charging and discharging process of the battery and ensure the safety and efficiency of the charging process.
3. **Motor drive**
In the motor drive circuit, MTD14N10ET4G-VB can be used as a switch controller for the motor, which can achieve efficient motor start and stop, and is suitable for power tools and automation equipment.
4. **LED drive**
This MOSFET can be used as a switching element in the LED drive circuit. Its fast switching characteristics enable it to effectively adjust the brightness of the LED, and is suitable for intelligent lighting systems and stage lighting.
5. **Industrial Control Systems**
In industrial automation, this MOSFET can be used as a load switch to control the working status of various devices and sensors, and is widely used in PLC control systems and robot control systems.
---
MTD14N10ET4G-VB has become an indispensable key component in modern power management and switching circuits due to its excellent performance and diverse application fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
