MTD10N10EL-VB Product details
Product introduction:
MTD10N10EL-VB is a high-performance **single N-channel (Single N-Channel)** MOSFET in **TO252 package**. The device has a **100V** drain-source voltage (VDS) and **±20V** gate-source voltage (VGS), suitable for a variety of power management and switching applications. The on-resistance of MTD10N10EL-VB is **114mΩ** at **VGS = 10V**, supporting a drain current (ID) of up to **15A**. Using **Trench technology**, this MOSFET has excellent conductivity and low power consumption characteristics, and is widely used in power conversion, switching power supplies and load driving.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameters | Specifications |
|--------------------|--------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (VDS)** | 100 V |
| **Gate-Source Voltage (VGS)** | ±20 V |
| **Threshold Voltage (Vth)** | 1.8 V |
| **On-Resistance (RDS(ON))** | 114 mΩ @ VGS = 10 V |
| **Drain Current (ID)** | 15 A |
| **Technology** | Trench |
The design of MTD10N10EL-VB ensures its high efficiency and stability in high-voltage and high-current working environments, which is suitable for the stringent requirements of modern electronic devices for MOSFETs.
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Domain and module applications:
1. **Switching power supply (SMPS)**
MTD10N10EL-VB can be widely used in switching power supplies. As an efficient switching element, it provides reliable power conversion and is particularly suitable for applications with high voltage stability requirements, such as industrial power supplies and power adapters.
2. **Battery management system (BMS)**
In the battery management system, this MOSFET can be used to control the charging and discharging of the battery to ensure that the battery works in an efficient and safe state. It is suitable for applications such as electric vehicles, portable devices and energy storage systems.
3. **Motor control**
MTD10N10EL-VB is also suitable for motor drive and control systems. It can drive DC motors and stepper motors. It is often used in robots, household appliances and industrial automation equipment to provide strong power output.
4. **LED lighting**
This device performs well in LED driving circuits and can effectively control the current of LEDs. It is widely used in commercial and household LED lighting solutions to improve lighting efficiency.
5. **Communication equipment**
MTD10N10EL-VB can be used in power modules of various communication equipment to ensure stable power transmission. It is suitable for wireless communication equipment, network equipment and data processing systems to improve the overall performance of the system.
Through its excellent performance and wide range of applications, MTD10N10EL-VB provides strong support for modern electronic design and is an important part of power management and control applications.
Technical support:
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