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MTD10N10ELT4-VB Product details
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MTD10N10ELT4-VB Product Introduction
The MTD10N10ELT4-VB is a high-performance single N-channel power MOSFET in a **TO252 package**, designed for high voltage and high current applications. The device has a drain-source voltage (**VDS**) of **100V** and a gate-source voltage (**VGS**) of ±20V, ensuring its excellent performance in harsh working environments. Its threshold voltage (**Vth**) is **1.8V**, and it can switch quickly and maintain a low on-resistance (**RDS(ON)**) of **114mΩ** (at **10V** VGS**) under appropriate drive voltage. With its **Trench technology**, the MTD10N10ELT4-VB provides excellent switching performance and energy efficiency, and is widely used in various power supplies and drive circuits.
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The MTD10N10ELT4-VB is a high-performance single N-channel power MOSFET in a **TO252 package**, designed for high voltage and high current applications. The device has a drain-source voltage (**VDS**) of **100V** and a gate-source voltage (**VGS**) of ±20V, ensuring its excellent performance in harsh working environments. Its threshold voltage (**Vth**) is **1.8V**, and it can switch quickly and maintain a low on-resistance (**RDS(ON)**) of **114mΩ** (at **10V** VGS**) under appropriate drive voltage. With its **Trench technology**, the MTD10N10ELT4-VB provides excellent switching performance and energy efficiency, and is widely used in various power supplies and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD10N10ELT4-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 114mΩ @ VGS=10V |
| **Drain current (ID)** | 15A |
| **Technology** | Trench |
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| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD10N10ELT4-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 114mΩ @ VGS=10V |
| **Drain current (ID)** | 15A |
| **Technology** | Trench |
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Domain and module applications：
Application fields and module examples
**MTD10N10ELT4-VB** performs well in multiple fields and modules, as shown below:
1. **Switching Power Supply (SMPS)**
- This MOSFET is suitable for switching power supply design, which can achieve efficient energy conversion and power management, reduce power consumption, and improve overall system efficiency.
2. **Motor Drive**
- In motor control applications, MTD10N10ELT4-VB can efficiently drive various motors, provide stable current output, meet the needs of high-power applications, and is suitable for power tools and home appliances.
3. **LED Drive**
- This device is suitable for LED lighting applications, which can stably control the driving current of LEDs, ensure uniform brightness and extend the service life of LEDs. It is widely used in commercial lighting and indoor lighting.
4. **Battery Management System (BMS)**
- In the battery management system, MTD10N10ELT4-VB can optimize the battery charging and discharging process, suitable for electric vehicles and energy storage systems, ensuring battery safety and high efficiency.
5. **Consumer Electronics**
- This MOSFET can be used in the power management module of consumer electronics such as laptops and tablets to improve energy efficiency and reduce heat generation, enhancing user experience.
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Through its excellent performance and range of applications, MTD10N10ELT4-VB has become an indispensable component in modern electronic design and is widely used in various high-efficiency power and drive systems.
**MTD10N10ELT4-VB** performs well in multiple fields and modules, as shown below:
1. **Switching Power Supply (SMPS)**
- This MOSFET is suitable for switching power supply design, which can achieve efficient energy conversion and power management, reduce power consumption, and improve overall system efficiency.
2. **Motor Drive**
- In motor control applications, MTD10N10ELT4-VB can efficiently drive various motors, provide stable current output, meet the needs of high-power applications, and is suitable for power tools and home appliances.
3. **LED Drive**
- This device is suitable for LED lighting applications, which can stably control the driving current of LEDs, ensure uniform brightness and extend the service life of LEDs. It is widely used in commercial lighting and indoor lighting.
4. **Battery Management System (BMS)**
- In the battery management system, MTD10N10ELT4-VB can optimize the battery charging and discharging process, suitable for electric vehicles and energy storage systems, ensuring battery safety and high efficiency.
5. **Consumer Electronics**
- This MOSFET can be used in the power management module of consumer electronics such as laptops and tablets to improve energy efficiency and reduce heat generation, enhancing user experience.
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Through its excellent performance and range of applications, MTD10N10ELT4-VB has become an indispensable component in modern electronic design and is widely used in various high-efficiency power and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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