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MTD10N10ELT4G-VB Product details
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Product Introduction
**MTD10N10ELT4G-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, which enables stable operation in various high voltage applications. The threshold voltage (Vth) of MTD10N10ELT4G-VB is 1.8V, which can be turned on at a lower gate voltage, improving the flexibility of circuit design. Its on-resistance (RDS(ON)) is 114mΩ at a gate voltage of 10V, ensuring low energy loss and low heat generation under load conditions. The maximum drain current (ID) is 15A, making it perform well under various power requirements. Using Trench technology, MTD10N10ELT4G-VB has excellent switching performance and is widely used in power management, motor drive and LED drive.
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**MTD10N10ELT4G-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and medium power applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, which enables stable operation in various high voltage applications. The threshold voltage (Vth) of MTD10N10ELT4G-VB is 1.8V, which can be turned on at a lower gate voltage, improving the flexibility of circuit design. Its on-resistance (RDS(ON)) is 114mΩ at a gate voltage of 10V, ensuring low energy loss and low heat generation under load conditions. The maximum drain current (ID) is 15A, making it perform well under various power requirements. Using Trench technology, MTD10N10ELT4G-VB has excellent switching performance and is widely used in power management, motor drive and LED drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD10N10ELT4G-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 114mΩ @ VGS=10V |
| **Drain current (ID)** | 15A |
| **Technology** | Trench |
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| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD10N10ELT4G-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 114mΩ @ VGS=10V |
| **Drain current (ID)** | 15A |
| **Technology** | Trench |
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Domain and module applications：
Applications and module examples
1. **Power management system**
The MTD10N10ELT4G-VB can be used as a high-efficiency switch in power management systems, especially for DC-DC converters. Its high VDS (100V) and low RDS(ON) characteristics enable it to effectively reduce energy loss during high-voltage conversion. For example, in power adapters for portable devices, this MOSFET ensures efficient energy transfer and optimizes the charging process.
2. **Motor drive**
In motor control applications, the MTD10N10ELT4G-VB can be used as a drive switch to support currents up to 15A. This makes it suitable for motor drives in power tools, electric vehicles, and home appliances, enabling efficient motor starting and speed control to meet a variety of application requirements.
3. **LED drive circuit**
This MOSFET performs well in LED drive circuits and can be used as a high-efficiency switch to control LED lighting systems. The low on-resistance characteristics of the MTD10N10ELT4G-VB reduce heat generation, improve the light efficiency and service life of the LED, and are suitable for various indoor and outdoor lighting systems.
4. **Automotive Electronics Applications**
In automotive electronic control modules, the MTD10N10ELT4G-VB can be used as a power switch, such as a driver for power windows and seat heaters. Its high current handling capability and low heat generation characteristics ensure the reliability and safety of vehicle electronic systems and provide stable power control.
5. **Industrial Automation and Control**
This MOSFET is suitable for use as a load switch in industrial automation and control systems. For example, it can be used to drive relays or contactors to control the start and stop of various industrial equipment. Due to its high withstand voltage and high current capability, the MTD10N10ELT4G-VB can meet the needs of various industrial applications.
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In summary, **MTD10N10ELT4G-VB** is an N-channel MOSFET with excellent performance, which is widely used in power management, motor control, LED lighting, automotive electronics and industrial automation, etc. Its high efficiency conduction and low energy consumption make it an ideal choice for various electrical applications.
1. **Power management system**
The MTD10N10ELT4G-VB can be used as a high-efficiency switch in power management systems, especially for DC-DC converters. Its high VDS (100V) and low RDS(ON) characteristics enable it to effectively reduce energy loss during high-voltage conversion. For example, in power adapters for portable devices, this MOSFET ensures efficient energy transfer and optimizes the charging process.
2. **Motor drive**
In motor control applications, the MTD10N10ELT4G-VB can be used as a drive switch to support currents up to 15A. This makes it suitable for motor drives in power tools, electric vehicles, and home appliances, enabling efficient motor starting and speed control to meet a variety of application requirements.
3. **LED drive circuit**
This MOSFET performs well in LED drive circuits and can be used as a high-efficiency switch to control LED lighting systems. The low on-resistance characteristics of the MTD10N10ELT4G-VB reduce heat generation, improve the light efficiency and service life of the LED, and are suitable for various indoor and outdoor lighting systems.
4. **Automotive Electronics Applications**
In automotive electronic control modules, the MTD10N10ELT4G-VB can be used as a power switch, such as a driver for power windows and seat heaters. Its high current handling capability and low heat generation characteristics ensure the reliability and safety of vehicle electronic systems and provide stable power control.
5. **Industrial Automation and Control**
This MOSFET is suitable for use as a load switch in industrial automation and control systems. For example, it can be used to drive relays or contactors to control the start and stop of various industrial equipment. Due to its high withstand voltage and high current capability, the MTD10N10ELT4G-VB can meet the needs of various industrial applications.
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In summary, **MTD10N10ELT4G-VB** is an N-channel MOSFET with excellent performance, which is widely used in power management, motor control, LED lighting, automotive electronics and industrial automation, etc. Its high efficiency conduction and low energy consumption make it an ideal choice for various electrical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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