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MTD10N05E-VB Product details
Back to previous pageProduct introduction：
1. MTD10N05E-VB Product Introduction
MTD10N05E-VB is a high-performance **single N-channel power MOSFET**, using **TO252 package**, designed for various power management applications. Its maximum drain-source voltage (**VDS**) is 60V, and it supports a gate-source voltage (**VGS**) of ±20V, ensuring stable operation of the device under a variety of operating conditions. The turn-on voltage (**Vth**) of this MOSFET is 1.7V, providing excellent performance of low on-resistance (**RDS(ON)**), which is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, which allows it to maintain low power loss under high current load conditions. The maximum drain current is 18A, which is suitable for high-efficiency and high-power circuit design.
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MTD10N05E-VB is a high-performance **single N-channel power MOSFET**, using **TO252 package**, designed for various power management applications. Its maximum drain-source voltage (**VDS**) is 60V, and it supports a gate-source voltage (**VGS**) of ±20V, ensuring stable operation of the device under a variety of operating conditions. The turn-on voltage (**Vth**) of this MOSFET is 1.7V, providing excellent performance of low on-resistance (**RDS(ON)**), which is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, which allows it to maintain low power loss under high current load conditions. The maximum drain current is 18A, which is suitable for high-efficiency and high-power circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of MTD10N05E-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for a variety of power management applications|
| **VDS (drain-source voltage)** | 60V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 85mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 73mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 18A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology, lower on-resistance, higher efficiency|
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| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for a variety of power management applications|
| **VDS (drain-source voltage)** | 60V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 85mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 73mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 18A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology, lower on-resistance, higher efficiency|
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Domain and module applications：
III. MTD10N05E-VB Application Fields and Module Examples
1. **Power Management System**
MTD10N05E-VB is commonly used in **switching power supplies** and **DC-DC converters**. With its low on-resistance and high efficiency characteristics, it can significantly improve the power conversion efficiency, reduce system heat, and adapt to high-power application requirements.
2. **Motor Drive**
In **motor control circuits**, this MOSFET can be used in H-bridge configuration to effectively drive DC motors, support a variety of speed regulation and reversal operations, and is suitable for use in robots, automation equipment and other fields.
3. **LED Driver**
In **LED lighting systems**, MTD10N05E-VB can effectively control the current of LEDs, provide stable power output, reduce energy consumption and heat, and improve the efficiency and life of lighting systems.
4. **Automotive electronics**
This MOSFET is widely used in **automotive electronics**, especially in power conversion, motor control and intelligent driving assistance systems. Its high performance and reliability ensure the stable operation of automotive electronic equipment.
5. **Battery management system**
MTD10N05E-VB is suitable for **Battery Management System (BMS)**, which efficiently controls the charging and discharging process of the battery, helping to improve battery performance and extend battery life.
In summary, MTD10N05E-VB is a power MOSFET with excellent performance and wide application, suitable for use in a variety of high-performance power management and drive circuits.
1. **Power Management System**
MTD10N05E-VB is commonly used in **switching power supplies** and **DC-DC converters**. With its low on-resistance and high efficiency characteristics, it can significantly improve the power conversion efficiency, reduce system heat, and adapt to high-power application requirements.
2. **Motor Drive**
In **motor control circuits**, this MOSFET can be used in H-bridge configuration to effectively drive DC motors, support a variety of speed regulation and reversal operations, and is suitable for use in robots, automation equipment and other fields.
3. **LED Driver**
In **LED lighting systems**, MTD10N05E-VB can effectively control the current of LEDs, provide stable power output, reduce energy consumption and heat, and improve the efficiency and life of lighting systems.
4. **Automotive electronics**
This MOSFET is widely used in **automotive electronics**, especially in power conversion, motor control and intelligent driving assistance systems. Its high performance and reliability ensure the stable operation of automotive electronic equipment.
5. **Battery management system**
MTD10N05E-VB is suitable for **Battery Management System (BMS)**, which efficiently controls the charging and discharging process of the battery, helping to improve battery performance and extend battery life.
In summary, MTD10N05E-VB is a power MOSFET with excellent performance and wide application, suitable for use in a variety of high-performance power management and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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