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MTD10N05ET4G-VB Product details
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**MTD10N05ET4G-VB MOSFET Product Introduction**
**MTD10N05ET4G-VB** is a high-efficiency **single N-channel MOSFET** in a **TO252 package**, designed for a variety of power management and switching applications. The device has a **drain-source voltage (VDS)** of up to **60V**, which is very suitable for the needs of medium and high voltage circuits. Its **gate-source voltage (VGS)** range is **±20V**, which enables normal operation under a variety of operating conditions. The **threshold voltage (Vth)** of MTD10N05ET4G-VB is **1.7V**, ensuring fast turn-on at low gate voltage. The **on-resistance (RDS(ON))** of this MOSFET is **85mΩ** at **VGS = 4.5V** and **73mΩ** at **VGS = 10V**, with extremely low conduction losses, suitable for high-efficiency power applications. Its **maximum continuous drain current (ID)** is **18A**, which can meet the current requirements of most applications. Using **Trench technology**, the MTD10N05ET4G-VB excels in thermal performance and switching characteristics, making it an ideal choice for power supply design and motor drive.
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**MTD10N05ET4G-VB** is a high-efficiency **single N-channel MOSFET** in a **TO252 package**, designed for a variety of power management and switching applications. The device has a **drain-source voltage (VDS)** of up to **60V**, which is very suitable for the needs of medium and high voltage circuits. Its **gate-source voltage (VGS)** range is **±20V**, which enables normal operation under a variety of operating conditions. The **threshold voltage (Vth)** of MTD10N05ET4G-VB is **1.7V**, ensuring fast turn-on at low gate voltage. The **on-resistance (RDS(ON))** of this MOSFET is **85mΩ** at **VGS = 4.5V** and **73mΩ** at **VGS = 10V**, with extremely low conduction losses, suitable for high-efficiency power applications. Its **maximum continuous drain current (ID)** is **18A**, which can meet the current requirements of most applications. Using **Trench technology**, the MTD10N05ET4G-VB excels in thermal performance and switching characteristics, making it an ideal choice for power supply design and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**MTD10N05ET4G-VB Detailed Parameter Description**
| **Parameter** | **Value** | **Description** |
|--------------------------|----------------------------------|---------------------------------------------------|
| **Package** | TO252 | Surface mount package for medium to high power and high voltage applications. |
| **Configuration** | Single N-channel | Suitable for high efficiency switching and control circuits. |
| **VDS (Drain-Source Voltage)** | 60V | Able to withstand high voltages to meet a variety of application requirements. |
| **VGS (Gate-Source Voltage)** | ±20V | Suitable for a wide voltage range and provides good drive capability. |
| **Vth (Threshold Voltage)** | 1.7V | Lower threshold voltage to ensure fast turn-on. |
| **RDS(ON) @ VGS = 4.5V** | 85mΩ | Low on-resistance to reduce power consumption and heat generation. |
| **RDS(ON) @ VGS = 10V** | 73mΩ | Lower on-resistance for high-efficiency applications. |
| **ID (Continuous Drain Current)** | 18A | High current capability to meet current load requirements. |
| **Technology** | Trench | Low on-resistance and high performance to optimize thermal management performance. |
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| **Parameter** | **Value** | **Description** |
|--------------------------|----------------------------------|---------------------------------------------------|
| **Package** | TO252 | Surface mount package for medium to high power and high voltage applications. |
| **Configuration** | Single N-channel | Suitable for high efficiency switching and control circuits. |
| **VDS (Drain-Source Voltage)** | 60V | Able to withstand high voltages to meet a variety of application requirements. |
| **VGS (Gate-Source Voltage)** | ±20V | Suitable for a wide voltage range and provides good drive capability. |
| **Vth (Threshold Voltage)** | 1.7V | Lower threshold voltage to ensure fast turn-on. |
| **RDS(ON) @ VGS = 4.5V** | 85mΩ | Low on-resistance to reduce power consumption and heat generation. |
| **RDS(ON) @ VGS = 10V** | 73mΩ | Lower on-resistance for high-efficiency applications. |
| **ID (Continuous Drain Current)** | 18A | High current capability to meet current load requirements. |
| **Technology** | Trench | Low on-resistance and high performance to optimize thermal management performance. |
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Domain and module applications：
**Application Examples of MTD10N05ET4G-VB**
1. **Power Management System**
MTD10N05ET4G-VB is commonly used in **switching power supplies** and **DC-DC converters** to effectively control the input and output current of the power supply and ensure stable operation of the system. Its high-efficiency conduction characteristics improve the energy efficiency of the power system and are suitable for various consumer electronics and industrial applications.
2. **Motor Control**
This MOSFET can be used in **DC motor drive** applications, especially for brushless motor (BLDC) control. With its high current capability and low on-resistance, it can achieve smooth motor operation and is widely used in power tools, household appliances, electric vehicles and other fields.
3. **LED Drive Circuit**
In **LED Lighting Control System**, MTD10N05ET4G-VB can be used as an efficient switching element to effectively adjust the brightness and power consumption of LED lights. Its low on-resistance can reduce power loss and improve the energy efficiency of lighting systems, making it suitable for indoor, outdoor and commercial lighting applications.
4. **Battery Management System**
This device can be used in **Battery Management System (BMS)** to perform precise control during charging and discharging to ensure battery safety and extend battery life. It is suitable for high-demand occasions such as electric vehicles, renewable energy storage systems and portable devices.
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**MTD10N05ET4G-VB** With its excellent performance and wide applicability, it has shown strong competitiveness in multiple fields and is an ideal choice for modern power management and control circuits.
1. **Power Management System**
MTD10N05ET4G-VB is commonly used in **switching power supplies** and **DC-DC converters** to effectively control the input and output current of the power supply and ensure stable operation of the system. Its high-efficiency conduction characteristics improve the energy efficiency of the power system and are suitable for various consumer electronics and industrial applications.
2. **Motor Control**
This MOSFET can be used in **DC motor drive** applications, especially for brushless motor (BLDC) control. With its high current capability and low on-resistance, it can achieve smooth motor operation and is widely used in power tools, household appliances, electric vehicles and other fields.
3. **LED Drive Circuit**
In **LED Lighting Control System**, MTD10N05ET4G-VB can be used as an efficient switching element to effectively adjust the brightness and power consumption of LED lights. Its low on-resistance can reduce power loss and improve the energy efficiency of lighting systems, making it suitable for indoor, outdoor and commercial lighting applications.
4. **Battery Management System**
This device can be used in **Battery Management System (BMS)** to perform precise control during charging and discharging to ensure battery safety and extend battery life. It is suitable for high-demand occasions such as electric vehicles, renewable energy storage systems and portable devices.
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**MTD10N05ET4G-VB** With its excellent performance and wide applicability, it has shown strong competitiveness in multiple fields and is an ideal choice for modern power management and control circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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