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MTB80N03L-VB Product details
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1. MTB80N03L-VB Product Introduction
The MTB80N03L-VB is a high-efficiency **single N-channel MOSFET**, designed in **TO263** package, with **30V drain-source voltage (VDS)** and **±20V gate voltage (VGS)**. This device has a drain current (ID) of up to **98A, which is very suitable for high-power, high-efficiency applications. By using **Trench technology**, the MTB80N03L-VB can achieve very low on-resistance, which is **2.7mΩ (VGS = 4.5V)** and **2.4mΩ (VGS = 10V)**, respectively, thereby reducing power consumption under high current operating conditions and improving the energy efficiency of the overall system. This MOSFET is mainly used in power management, motor drive and other electronic devices with high performance requirements.
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The MTB80N03L-VB is a high-efficiency **single N-channel MOSFET**, designed in **TO263** package, with **30V drain-source voltage (VDS)** and **±20V gate voltage (VGS)**. This device has a drain current (ID) of up to **98A, which is very suitable for high-power, high-efficiency applications. By using **Trench technology**, the MTB80N03L-VB can achieve very low on-resistance, which is **2.7mΩ (VGS = 4.5V)** and **2.4mΩ (VGS = 10V)**, respectively, thereby reducing power consumption under high current operating conditions and improving the energy efficiency of the overall system. This MOSFET is mainly used in power management, motor drive and other electronic devices with high performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of MTB80N03L-VB
| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-------------------------------------|
| **Package type** | TO263 | Suitable for surface mounting, with good heat dissipation performance|
| **Configuration** | Single N-Channel | Single N-channel, providing efficient switching control|
| **VDS** | 30V | Drain-source voltage, suitable for medium and low voltage applications|
| **VGS (absolute value)** | ±20V | Gate voltage tolerance range|
| **Vth** | 1.7V | Gate turn-on voltage, ensure reliable device startup|
| **RDS(ON)** | 2.7mΩ @ VGS=4.5V; 2.4mΩ @ VGS=10V | On-resistance, suitable for high current applications|
| **ID** | 98A | Drain current, meeting high current requirements|
| **Technology** | Trench | Trench technology, optimizing conduction performance and energy efficiency|
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| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-------------------------------------|
| **Package type** | TO263 | Suitable for surface mounting, with good heat dissipation performance|
| **Configuration** | Single N-Channel | Single N-channel, providing efficient switching control|
| **VDS** | 30V | Drain-source voltage, suitable for medium and low voltage applications|
| **VGS (absolute value)** | ±20V | Gate voltage tolerance range|
| **Vth** | 1.7V | Gate turn-on voltage, ensure reliable device startup|
| **RDS(ON)** | 2.7mΩ @ VGS=4.5V; 2.4mΩ @ VGS=10V | On-resistance, suitable for high current applications|
| **ID** | 98A | Drain current, meeting high current requirements|
| **Technology** | Trench | Trench technology, optimizing conduction performance and energy efficiency|
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Domain and module applications：
3. Application fields and module examples
1. **Power management system**
MTB80N03L-VB is particularly suitable for **power management systems**, such as DC-DC converters, AC-DC converters and power switches. The high current carrying capacity and low on-resistance of this MOSFET ensure high efficiency and stable power output in various power modules, improving the energy efficiency and working stability of the equipment.
2. **Motor control**
In **motor drive applications**, MTB80N03L-VB can be used as a high-efficiency switching device and is widely used in drive circuits such as brushless DC motors (BLDC) and stepper motors. Due to its high drain current of **98A**, the device can handle high transient currents during motor startup and operation, ensuring high efficiency and fast response of the drive system.
3. **LED lighting**
In **LED lighting modules**, MTB80N03L-VB can be used as a dimming and switching control device. Its extremely low on-resistance minimizes energy loss during dimming, improving the energy efficiency of LED lighting systems and making them more competitive in the market.
4. **Automotive Electronics**
The MTB80N03L-VB is also very suitable for **automotive electronic systems**, such as electric power steering (EPS), on-board power management and electric window control. The MOSFET can operate under high current and high load conditions to ensure the reliability and safety of automotive systems.
5. **Industrial Automation**
In **industrial automation equipment**, the MTB80N03L-VB can be used as a power control and drive circuit to help realize functions such as motor control, sensor power management and load control, adapt to dynamic load changes, and improve system reliability and efficiency.
The MTB80N03L-VB is a single N-channel MOSFET with excellent performance and broad application prospects, which can provide efficient and stable solutions for modern electronic devices.
1. **Power management system**
MTB80N03L-VB is particularly suitable for **power management systems**, such as DC-DC converters, AC-DC converters and power switches. The high current carrying capacity and low on-resistance of this MOSFET ensure high efficiency and stable power output in various power modules, improving the energy efficiency and working stability of the equipment.
2. **Motor control**
In **motor drive applications**, MTB80N03L-VB can be used as a high-efficiency switching device and is widely used in drive circuits such as brushless DC motors (BLDC) and stepper motors. Due to its high drain current of **98A**, the device can handle high transient currents during motor startup and operation, ensuring high efficiency and fast response of the drive system.
3. **LED lighting**
In **LED lighting modules**, MTB80N03L-VB can be used as a dimming and switching control device. Its extremely low on-resistance minimizes energy loss during dimming, improving the energy efficiency of LED lighting systems and making them more competitive in the market.
4. **Automotive Electronics**
The MTB80N03L-VB is also very suitable for **automotive electronic systems**, such as electric power steering (EPS), on-board power management and electric window control. The MOSFET can operate under high current and high load conditions to ensure the reliability and safety of automotive systems.
5. **Industrial Automation**
In **industrial automation equipment**, the MTB80N03L-VB can be used as a power control and drive circuit to help realize functions such as motor control, sensor power management and load control, adapt to dynamic load changes, and improve system reliability and efficiency.
The MTB80N03L-VB is a single N-channel MOSFET with excellent performance and broad application prospects, which can provide efficient and stable solutions for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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