MTB75N06HD-VB Product details
Product introduction:
MTB75N06HD-VB is a high-performance **Single N-Channel** MOSFET in **TO263 package**, specially designed for high-efficiency power management and switching applications. The device has a **60V** drain-source voltage (VDS), a maximum gate-source voltage (VGS) of ±20V, and can withstand a drain current of up to **150A**. Its on-resistance is only **4mΩ** at **VGS = 10V**, which greatly reduces power consumption and heat generation, and is suitable for applications requiring high efficiency. MTB75N06HD-VB uses advanced **Trench technology**, which performs well in high-frequency and high-power applications, ensuring the reliability and performance of the equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| Parameters | Specifications |
|--------------------|------------------------------|
| **Package** | TO263 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (VDS)** | 60 V |
| **Gate-Source Voltage (VGS)** | ±20 V |
| **Threshold Voltage (Vth)** | 3 V |
| **On-Resistance (RDS(ON))** | 4 mΩ @ VGS = 10 V |
| **Drain Current (ID)** | 150 A |
| **Technology** | Trench |
The low on-resistance and high current carrying capability of this MOSFET make it an ideal choice for high-efficiency power supply designs and suitable for a variety of applications.
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Domain and module applications:
1. **High-power power management**
MTB75N06HD-VB can be used in power management systems such as switching power supplies and DC-DC converters to optimize power conversion efficiency. It is particularly suitable for applications such as server power supplies, industrial power supplies and chargers to reduce energy consumption and extend equipment life.
2. **Motor drive applications**
In motor control systems, this MOSFET can be used to drive brushless DC motors and stepper motors, providing high current control, improving the motor's response speed and drive efficiency, and is suitable for robots, automation equipment, electric vehicles and other fields.
3. **LED lighting system**
MTB75N06HD-VB performs well in LED drive circuits and can effectively control the drive of high-power LEDs. It is suitable for architectural lighting, stage lighting, automotive LED lighting and other occasions to achieve higher brightness adjustment capabilities.
4. **Battery Management System (BMS)**
In the battery management system, this MOSFET is used to control the charge and discharge of the battery to ensure the safety and efficiency of the battery. It is suitable for electric vehicles, energy storage systems and portable devices to provide stable power output.
5. **Communication and Consumer Electronics Devices**
In communication equipment and consumer electronics products, MTB75N06HD-VB can be used in power modules to ensure efficient signal transmission and processing. It is widely used in wireless communications, audio and video equipment and computer peripheral products.
With its excellent performance and wide range of applications, MTB75N06HD-VB has become an important component in electronic design.
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