MTB75N05HDT4-VB Product details
Product introduction:
The MTB75N05HDT4-VB is a high-performance single N-channel power MOSFET in a **TO263 package**, designed for high current and low voltage applications. The device has a drain-source voltage (**VDS**) of up to **60V**, a gate-source voltage (**VGS**) of ±20V, and a threshold voltage (**Vth**) of **3V**. Its on-resistance (**RDS(ON)**) is only **4mΩ** at a VGS of **10V**, making it an excellent performer in high-efficiency switching power supplies and motor drive applications. This MOSFET uses **Trench technology** to improve switching performance and reduce energy losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Specification** |
|-----------------------|------------------------|
| **Model** | MTB75N05HDT4-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 4mΩ @ VGS=10V |
| **Drain current (ID)** | 150A |
| **Technology** | Trench |
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Domain and module applications:
**MTB75N05HDT4-VB** is suitable for multiple fields and modules, with the following specific examples:
1. **Switching Power Supply (SMPS)**
- Due to its low on-resistance and high current capability, this MOSFET is very suitable for use in high-efficiency switching power supplies, improving the overall efficiency of the power supply and reducing energy loss.
2. **Motor Drive**
- In motor drive applications, this device can be used for efficient switching control to achieve precise control and drive of the motor, suitable for high-power and high-efficiency motor control systems.
3. **Battery Management System (BMS)**
- In the battery management system, the MTB75N05HDT4-VB can be used to optimize the charging and discharging process to improve the performance and service life of the battery, especially in electric vehicles and energy storage systems.
4. **Consumer Electronics**
- Suitable for power management modules in laptops, tablets and other consumer electronics to achieve efficient power conversion and energy management.
5. **LED Driver**
- In LED lighting driver applications, this MOSFET can provide stable current, ensure LED brightness uniformity and long life, suitable for various lighting solutions.
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MTB75N05HDT4-VB
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