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MTB75N03HDL-VB Product details

Product introduction:

Product Introduction

**MTB75N03HDL-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for high power and high efficiency applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, the device performs well in a variety of power management and switching applications. The threshold voltage (Vth) of MTB75N03HDL-VB is 1.7V, which allows it to be effectively turned on at a lower gate voltage, thereby simplifying circuit design. Its on-resistance (RDS(ON)) is 2.7mΩ at 4.5V and drops to 2.4mΩ at 10V, ensuring low energy consumption and low heat generation under load conditions. The MOSFET supports a drain current (ID) of up to 98A, making it ideal for use in high power applications. Using Trench technology, MTB75N03HDL-VB has excellent switching performance and thermal performance, and is widely used in power converters, motor drives, LED drives and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTB75N03HDL-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 2.7mΩ @ VGS=4.5V |
| | 2.4mΩ @ VGS=10V |
| **Drain current (ID)** | 98A |
| **Technology** | Trench |

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Domain and module applications:

Applications and module examples

1. **Power management system**
The MTB75N03HDL-VB can be used as an efficient switch in power management systems. Its low RDS(ON) characteristics and high drain current capability enable it to reduce energy loss and improve overall conversion efficiency in DC-DC converters. For example, in battery chargers for portable electronic devices, this MOSFET can effectively control the flow of power, improving charging speed and efficiency.

2. **Electric motor drive**
In electric motor control circuits, the MTB75N03HDL-VB can be used as a drive switch to support currents up to 98A, making it suitable for motor drives in power tools and electric vehicles. Its fast switching characteristics enable efficient motor control, improving response speed and power output.

3. **LED drive circuit**
This MOSFET is suitable for use in LED drive circuits, enabling precise switching control to improve the efficiency and stability of LED lighting systems. Through its low on-resistance, the MTB75N03HDL-VB can effectively reduce heat generation and extend the service life of LED lamps.

4. **Automotive Electronics Applications**
In automotive electronic systems, the MTB75N03HDL-VB can be used for power management and load switching, such as power windows, seat heating and other electrical devices. Its high current handling capability and low thermal characteristics ensure the reliability and stability of the vehicle system.

5. **Industrial Control Systems**
In industrial automation and control systems, this MOSFET can be used as a switch for high-power loads, such as relays or contactor drivers. Due to its high withstand voltage and high current capability, the MTB75N03HDL-VB can support complex industrial applications and ensure the normal operation of equipment.

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In summary, the **MTB75N03HDL-VB** is an excellent N-channel MOSFET suitable for power management, electric motor drive, LED lighting, automotive electronics and industrial control. Its high efficiency conduction and low loss characteristics make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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