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MTB75N03HDLT4G-VB Product details
Back to previous pageProduct introduction：
1. MTB75N03HDLT4G-VB Product Introduction
MTB75N03HDLT4G-VB is a high-performance **single N-channel power MOSFET**, using **TO-263 package**, designed for high current and low voltage applications. Its maximum drain-source voltage (**VDS**) is 30V, and it supports a gate-source voltage (**VGS**) of ±20V, which enhances its driving flexibility. The **turn-on voltage (Vth)** of MTB75N03HDLT4G-VB is 1.7V, which can be turned on at a lower gate voltage and is suitable for a variety of control circuits. Its low on-resistance (**RDS(ON)**) is 2.7mΩ at VGS=4.5V, and further drops to 2.4mΩ at VGS=10V, which gives it excellent efficiency and thermal performance under high current conditions, and a maximum continuous drain current of 98A, which is very suitable for high power applications.
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MTB75N03HDLT4G-VB is a high-performance **single N-channel power MOSFET**, using **TO-263 package**, designed for high current and low voltage applications. Its maximum drain-source voltage (**VDS**) is 30V, and it supports a gate-source voltage (**VGS**) of ±20V, which enhances its driving flexibility. The **turn-on voltage (Vth)** of MTB75N03HDLT4G-VB is 1.7V, which can be turned on at a lower gate voltage and is suitable for a variety of control circuits. Its low on-resistance (**RDS(ON)**) is 2.7mΩ at VGS=4.5V, and further drops to 2.4mΩ at VGS=10V, which gives it excellent efficiency and thermal performance under high current conditions, and a maximum continuous drain current of 98A, which is very suitable for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of MTB75N03HDLT4G-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO-263 | Surface mount package, suitable for power-intensive applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET structure|
| **VDS (drain-source voltage)** | 30V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 2.7mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 2.4mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 98A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology, lower on-resistance, higher efficiency|
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| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO-263 | Surface mount package, suitable for power-intensive applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET structure|
| **VDS (drain-source voltage)** | 30V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 2.7mΩ | On resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 2.4mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 98A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology, lower on-resistance, higher efficiency|
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Domain and module applications：
III. MTB75N03HDLT4G-VB Application Fields and Module Examples
1. **Electric Vehicles and Hybrid Vehicles**
The MTB75N03HDLT4G-VB plays a key role in the **Electric Drive System** and **Battery Management System (BMS)** of electric vehicles. Its high current capability and low on-resistance ensure stable performance under high power demand, optimize energy efficiency and reduce heat generation.
2. **DC-DC Converter**
In **Switch Mode Power Supply (SMPS)** and **DC-DC Converter**, the MTB75N03HDLT4G-VB can be used as an efficient switching element, providing fast switching speed and low energy loss, ensuring the stability and efficiency of the system under high frequency operation.
3. **Industrial Control and Automation**
This MOSFET is widely used in **Industrial Automation Equipment**, suitable for controlling high current loads such as motor drives, actuators, etc., to ensure efficient and reliable power conversion.
4. **Consumer Electronics**
The MTB75N03HDLT4G-VB can also be used in power management modules for **smart home appliances** and **consumer electronics**, such as chargers and power adapters, to improve device energy efficiency and reduce standby power consumption.
5. **LED Driving and Lighting**
In **LED driving circuits**, the MTB75N03HDLT4G-VB can be used as a switching element to ensure operation at an efficient current, extend LED life and reduce power loss.
With its efficient switching performance and superior electrical characteristics, the MTB75N03HDLT4G-VB is suitable for high-power applications in a variety of fields, providing flexibility and reliability for system design.
1. **Electric Vehicles and Hybrid Vehicles**
The MTB75N03HDLT4G-VB plays a key role in the **Electric Drive System** and **Battery Management System (BMS)** of electric vehicles. Its high current capability and low on-resistance ensure stable performance under high power demand, optimize energy efficiency and reduce heat generation.
2. **DC-DC Converter**
In **Switch Mode Power Supply (SMPS)** and **DC-DC Converter**, the MTB75N03HDLT4G-VB can be used as an efficient switching element, providing fast switching speed and low energy loss, ensuring the stability and efficiency of the system under high frequency operation.
3. **Industrial Control and Automation**
This MOSFET is widely used in **Industrial Automation Equipment**, suitable for controlling high current loads such as motor drives, actuators, etc., to ensure efficient and reliable power conversion.
4. **Consumer Electronics**
The MTB75N03HDLT4G-VB can also be used in power management modules for **smart home appliances** and **consumer electronics**, such as chargers and power adapters, to improve device energy efficiency and reduce standby power consumption.
5. **LED Driving and Lighting**
In **LED driving circuits**, the MTB75N03HDLT4G-VB can be used as a switching element to ensure operation at an efficient current, extend LED life and reduce power loss.
With its efficient switching performance and superior electrical characteristics, the MTB75N03HDLT4G-VB is suitable for high-power applications in a variety of fields, providing flexibility and reliability for system design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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