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MTB70N03-VB Product details
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**MTB70N03-VB MOSFET Product Introduction**
**MTB70N03-VB** is a high-efficiency **single N-channel MOSFET**, using **TO-263 package**, designed for applications requiring high current and low voltage. Its **drain-source voltage (VDS)** reaches **30V**, and can withstand a maximum **±20V gate-source voltage (VGS)**, ensuring stability under a variety of working environments. The threshold voltage (Vth) of the device is **1.7V**, which can be turned on quickly at a lower gate voltage. Its on-resistance (RDS(ON)) is **2.4mΩ** at **VGS = 10V** and **2.7mΩ** at **VGS = 4.5V**. The extremely low on-resistance ensures low power consumption and high efficiency. The **maximum continuous drain current (ID)** of the device reaches **98A**, which is very suitable for high-power application requirements. Using **Trench technology**, this MOSFET has excellent thermal management and performance when turned on, making it an ideal choice for power management and drive modules.
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**MTB70N03-VB** is a high-efficiency **single N-channel MOSFET**, using **TO-263 package**, designed for applications requiring high current and low voltage. Its **drain-source voltage (VDS)** reaches **30V**, and can withstand a maximum **±20V gate-source voltage (VGS)**, ensuring stability under a variety of working environments. The threshold voltage (Vth) of the device is **1.7V**, which can be turned on quickly at a lower gate voltage. Its on-resistance (RDS(ON)) is **2.4mΩ** at **VGS = 10V** and **2.7mΩ** at **VGS = 4.5V**. The extremely low on-resistance ensures low power consumption and high efficiency. The **maximum continuous drain current (ID)** of the device reaches **98A**, which is very suitable for high-power application requirements. Using **Trench technology**, this MOSFET has excellent thermal management and performance when turned on, making it an ideal choice for power management and drive modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**MTB70N03-VB Detailed Parameters**
| **Parameter** | **Value** | **Description** |
|--------------------------|---------------------------------|---------------------------------------------------|
| **Package** | TO-263 | Surface mount package, suitable for high power applications, excellent heat dissipation performance. |
| **Configuration** | Single N-channel | Commonly used in low-side switches and power management circuits. |
| **VDS (Drain-Source Voltage)** | 30V | Suitable for low-voltage power supplies and switching circuits. |
| **VGS (Gate-Source Voltage)** | ±20V | Wide range of operating voltages, enhanced design flexibility. |
| **Vth (Threshold Voltage)** | 1.7V | Rapid turn-on at low gate voltage, suitable for low power circuits. |
| **RDS(ON) @ VGS = 4.5V** | 2.7mΩ | Provides excellent on-state performance at lower gate voltages. |
| **RDS(ON) @ VGS = 10V** | 2.4mΩ | Provides lower on-resistance at high gate voltages, reducing power consumption. |
| **ID (Continuous Drain Current)** | 98A | High current capability for high power applications. |
| **Technology** | Trench | Low on-resistance and high efficiency, optimized thermal management performance. |
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| **Parameter** | **Value** | **Description** |
|--------------------------|---------------------------------|---------------------------------------------------|
| **Package** | TO-263 | Surface mount package, suitable for high power applications, excellent heat dissipation performance. |
| **Configuration** | Single N-channel | Commonly used in low-side switches and power management circuits. |
| **VDS (Drain-Source Voltage)** | 30V | Suitable for low-voltage power supplies and switching circuits. |
| **VGS (Gate-Source Voltage)** | ±20V | Wide range of operating voltages, enhanced design flexibility. |
| **Vth (Threshold Voltage)** | 1.7V | Rapid turn-on at low gate voltage, suitable for low power circuits. |
| **RDS(ON) @ VGS = 4.5V** | 2.7mΩ | Provides excellent on-state performance at lower gate voltages. |
| **RDS(ON) @ VGS = 10V** | 2.4mΩ | Provides lower on-resistance at high gate voltages, reducing power consumption. |
| **ID (Continuous Drain Current)** | 98A | High current capability for high power applications. |
| **Technology** | Trench | Low on-resistance and high efficiency, optimized thermal management performance. |
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Domain and module applications：
**Application examples of MTB70N03-VB**
1. **Power management system**
This MOSFET is commonly used in **DC-DC converters** and **synchronous rectification circuits**. Its extremely low RDS(ON) characteristics can significantly reduce energy loss and improve the system's conversion efficiency. It is very suitable for high-efficiency power supply design, such as computer power supplies, server power supplies and consumer electronic devices.
2. **Motor drive and control**
In **motor drive modules**, MTB70N03-VB can efficiently control the start, stop and speed of small motors. It is widely used in motor drives in power tools, household appliances and robot systems.
3. **Battery management and protection circuits**
Due to its high current capability, MTB70N03-VB is suitable for **lithium battery chargers** and **battery protection circuits**, which can prevent overcurrent and overheating, ensure battery safety and extend battery life.
4. **Industrial Control and Automation**
This MOSFET is also suitable for switching circuits in **industrial automation systems**, providing reliable control under high power loads to ensure efficient operation of equipment.
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**MTB70N03-VB** With its ultra-low on-resistance and high current carrying capacity, it is widely used in consumer electronics, industrial control, automotive electronics, power management and other fields, and is an excellent choice for optimizing high-performance system design.
1. **Power management system**
This MOSFET is commonly used in **DC-DC converters** and **synchronous rectification circuits**. Its extremely low RDS(ON) characteristics can significantly reduce energy loss and improve the system's conversion efficiency. It is very suitable for high-efficiency power supply design, such as computer power supplies, server power supplies and consumer electronic devices.
2. **Motor drive and control**
In **motor drive modules**, MTB70N03-VB can efficiently control the start, stop and speed of small motors. It is widely used in motor drives in power tools, household appliances and robot systems.
3. **Battery management and protection circuits**
Due to its high current capability, MTB70N03-VB is suitable for **lithium battery chargers** and **battery protection circuits**, which can prevent overcurrent and overheating, ensure battery safety and extend battery life.
4. **Industrial Control and Automation**
This MOSFET is also suitable for switching circuits in **industrial automation systems**, providing reliable control under high power loads to ensure efficient operation of equipment.
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**MTB70N03-VB** With its ultra-low on-resistance and high current carrying capacity, it is widely used in consumer electronics, industrial control, automotive electronics, power management and other fields, and is an excellent choice for optimizing high-performance system design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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