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MTB60N06HDT4G-VB Product details
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1. MTB60N06HDT4G-VB Product Introduction
MTB60N06HDT4G-VB is a high-efficiency **single N-channel MOSFET**, using **TO263 package**, designed for high-power applications. Its **drain-source voltage (VDS)** is **60V**, and the maximum gate-source voltage (VGS) is **±20V**. It has a high current carrying capacity and the drain current (ID) can reach **75A**. The **turn-on voltage (Vth)** of this device is **1.7V**, and good conduction performance can be achieved at low gate voltage. Under different gate voltages, MTB60N06HDT4G-VB shows excellent on-resistance characteristics: at **VGS = 4.5V**, RDS(ON) is **12mΩ**, and at **VGS = 10V**, RDS(ON) is reduced to **11mΩ**. The use of **Trench technology** enables this MOSFET to achieve low conduction loss and high efficiency in a small size, making it very suitable for various high-frequency and high-efficiency power management applications.
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MTB60N06HDT4G-VB is a high-efficiency **single N-channel MOSFET**, using **TO263 package**, designed for high-power applications. Its **drain-source voltage (VDS)** is **60V**, and the maximum gate-source voltage (VGS) is **±20V**. It has a high current carrying capacity and the drain current (ID) can reach **75A**. The **turn-on voltage (Vth)** of this device is **1.7V**, and good conduction performance can be achieved at low gate voltage. Under different gate voltages, MTB60N06HDT4G-VB shows excellent on-resistance characteristics: at **VGS = 4.5V**, RDS(ON) is **12mΩ**, and at **VGS = 10V**, RDS(ON) is reduced to **11mΩ**. The use of **Trench technology** enables this MOSFET to achieve low conduction loss and high efficiency in a small size, making it very suitable for various high-frequency and high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. MTB60N06HDT4G-VB Detailed parameter description
| **Parameter** | **Description and value** |
|-------------------------|---------------------------------------|
| **Package** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throwing voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 12mΩ @ VGS = 4.5V |
| | 11mΩ @ VGS = 10V |
| **Drain current (ID)** | 75A |
| **Technology** | Trench |
| **Maximum power consumption (Pd)** | 75W (depending on cooling conditions) |
| **Operating temperature range** | -55°C to 150°C |
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| **Parameter** | **Description and value** |
|-------------------------|---------------------------------------|
| **Package** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throwing voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 12mΩ @ VGS = 4.5V |
| | 11mΩ @ VGS = 10V |
| **Drain current (ID)** | 75A |
| **Technology** | Trench |
| **Maximum power consumption (Pd)** | 75W (depending on cooling conditions) |
| **Operating temperature range** | -55°C to 150°C |
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Domain and module applications：
III. MTB60N06HDT4G-VB Application Fields and Modules
Due to its efficient N-channel design and low on-resistance, MTB60N06HDT4G-VB is widely used in the following fields and modules:
1. **DC-DC converter**
- In **switching power supplies** and **DC-DC converters**, this MOSFET can be used as the main switch to improve conversion efficiency and ensure reliability under high load conditions. It is suitable for power adapters and industrial power modules.
2. **Motor drive**
- This device can be used in **motor drive circuits** to provide efficient switching control for DC motors or stepper motors, achieve precise speed and position control, and is widely used in robots and automation equipment.
3. **Battery Management System (BMS)**
- In the battery management system, the MTB60N06HDT4G-VB can be used as a charge and discharge control switch to effectively manage the charging and discharging process of lithium batteries, prevent overcharging and over-discharging, and improve system safety.
4. **LED Driver**
- This MOSFET also performs well in LED lighting applications, and can be used as a constant current drive switch to provide stable current, suitable for indoor lighting and landscape lighting.
5. **Portable Devices**
- Due to its small package and high current carrying capacity, the MTB60N06HDT4G-VB is suitable for use in **portable electronic devices**, such as power management modules in mobile power banks and smartphones.
6. **Consumer Electronics**
- In various consumer electronics products, this MOSFET can be used for switching power management, controlling power switches and loads, and improving the energy efficiency and operation stability of the system.
The high performance N-channel design of the MTB60N06HDT4G-VB enables efficient power control and management in multiple electronic products, and is particularly suitable for modern high frequency and high efficiency power applications.
Due to its efficient N-channel design and low on-resistance, MTB60N06HDT4G-VB is widely used in the following fields and modules:
1. **DC-DC converter**
- In **switching power supplies** and **DC-DC converters**, this MOSFET can be used as the main switch to improve conversion efficiency and ensure reliability under high load conditions. It is suitable for power adapters and industrial power modules.
2. **Motor drive**
- This device can be used in **motor drive circuits** to provide efficient switching control for DC motors or stepper motors, achieve precise speed and position control, and is widely used in robots and automation equipment.
3. **Battery Management System (BMS)**
- In the battery management system, the MTB60N06HDT4G-VB can be used as a charge and discharge control switch to effectively manage the charging and discharging process of lithium batteries, prevent overcharging and over-discharging, and improve system safety.
4. **LED Driver**
- This MOSFET also performs well in LED lighting applications, and can be used as a constant current drive switch to provide stable current, suitable for indoor lighting and landscape lighting.
5. **Portable Devices**
- Due to its small package and high current carrying capacity, the MTB60N06HDT4G-VB is suitable for use in **portable electronic devices**, such as power management modules in mobile power banks and smartphones.
6. **Consumer Electronics**
- In various consumer electronics products, this MOSFET can be used for switching power management, controlling power switches and loads, and improving the energy efficiency and operation stability of the system.
The high performance N-channel design of the MTB60N06HDT4G-VB enables efficient power control and management in multiple electronic products, and is particularly suitable for modern high frequency and high efficiency power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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