中文
English
MTB55N03J3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction: MTB55N03J3-VB MOSFET**
MTB55N03J3-VB is a high-performance **single N-channel MOSFET** in **TO252 package**, designed to meet the needs of high current and low voltage applications. The device has **30V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, suitable for a variety of power management and load switching applications. Its **threshold voltage (Vth) is 1.7V**, which ensures good turn-on performance at low gate drive voltage.
MTB55N03J3-VB has excellent on-resistance (RDS(ON)), which is **9mΩ** at **VGS=4.5V** and only **7mΩ** at **VGS=10V**, effectively reducing conduction losses and thus improving power efficiency. Its maximum **drain current (ID) is 70A**, which can meet the requirements of high-power applications, especially in environments sensitive to power loss. Thanks to the **Trench technology**, this MOSFET has excellent heat dissipation performance, ensuring stable operation under harsh conditions.
---
MTB55N03J3-VB is a high-performance **single N-channel MOSFET** in **TO252 package**, designed to meet the needs of high current and low voltage applications. The device has **30V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, suitable for a variety of power management and load switching applications. Its **threshold voltage (Vth) is 1.7V**, which ensures good turn-on performance at low gate drive voltage.
MTB55N03J3-VB has excellent on-resistance (RDS(ON)), which is **9mΩ** at **VGS=4.5V** and only **7mΩ** at **VGS=10V**, effectively reducing conduction losses and thus improving power efficiency. Its maximum **drain current (ID) is 70A**, which can meet the requirements of high-power applications, especially in environments sensitive to power loss. Thanks to the **Trench technology**, this MOSFET has excellent heat dissipation performance, ensuring stable operation under harsh conditions.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for high current applications|
| **Configuration** | Single-N-Channel | Single N-channel design, suitable for power management|
| **VDS (drain-source voltage)** | 30V | Maximum withstand voltage, suitable for medium and low voltage systems|
| **VGS (gate-source voltage)** | ±20V | Maximum gate control voltage|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage required for device turn-on|
| **RDS(ON)@VGS=4.5V** | 9mΩ | On-resistance at 4.5V gate drive voltage|
| **RDS(ON)@VGS=10V** | 7mΩ | On-resistance at 10V gate drive voltage |
| **ID (drain current)** | 70A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for improved performance and heat dissipation |
---
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for high current applications|
| **Configuration** | Single-N-Channel | Single N-channel design, suitable for power management|
| **VDS (drain-source voltage)** | 30V | Maximum withstand voltage, suitable for medium and low voltage systems|
| **VGS (gate-source voltage)** | ±20V | Maximum gate control voltage|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage required for device turn-on|
| **RDS(ON)@VGS=4.5V** | 9mΩ | On-resistance at 4.5V gate drive voltage|
| **RDS(ON)@VGS=10V** | 7mΩ | On-resistance at 10V gate drive voltage |
| **ID (drain current)** | 70A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for improved performance and heat dissipation |
---
Domain and module applications：
**Application fields and module examples**
1. **Power management system**
MTB55N03J3-VB is widely used in power management systems as a **switching element** of DC-DC converters. Its low on-resistance characteristic reduces the power consumption during the conversion process, thereby improving the overall efficiency, and is suitable for use in mobile devices and consumer electronics.
2. **Power tools and battery management**
In power tools and battery management systems, this MOSFET can be used as a **motor drive switch** to provide high current support. Its high drain current capability (70A) enables it to meet the instantaneous start-up requirements of power tools under high load conditions.
3. **LED drive circuit**
MTB55N03J3-VB is suitable for LED drive circuits and can be used as a **switching element** to control the on and off state of LEDs. Its fast switching characteristics make LED dimming smoother and is widely used in lighting systems.
4. **Power amplifier**
In power amplifier applications, the device can handle higher currents with lower power consumption to ensure stable system operation. It can be used in fields such as radio transmission and audio amplification to improve the overall performance of the system.
5. **Power protection circuit**
MTB55N03J3-VB can be used as a **reverse protection element** to prevent reverse current flow and protect the power circuit and load. In many electronic devices, this protection function is crucial to ensure the safety and reliability of the system.
---
With its excellent performance and efficient power management capabilities, MTB55N03J3-VB has become an ideal choice for a variety of applications, especially in high current and low voltage circuits, providing a reliable solution for various electronic devices.
1. **Power management system**
MTB55N03J3-VB is widely used in power management systems as a **switching element** of DC-DC converters. Its low on-resistance characteristic reduces the power consumption during the conversion process, thereby improving the overall efficiency, and is suitable for use in mobile devices and consumer electronics.
2. **Power tools and battery management**
In power tools and battery management systems, this MOSFET can be used as a **motor drive switch** to provide high current support. Its high drain current capability (70A) enables it to meet the instantaneous start-up requirements of power tools under high load conditions.
3. **LED drive circuit**
MTB55N03J3-VB is suitable for LED drive circuits and can be used as a **switching element** to control the on and off state of LEDs. Its fast switching characteristics make LED dimming smoother and is widely used in lighting systems.
4. **Power amplifier**
In power amplifier applications, the device can handle higher currents with lower power consumption to ensure stable system operation. It can be used in fields such as radio transmission and audio amplification to improve the overall performance of the system.
5. **Power protection circuit**
MTB55N03J3-VB can be used as a **reverse protection element** to prevent reverse current flow and protect the power circuit and load. In many electronic devices, this protection function is crucial to ensure the safety and reliability of the system.
---
With its excellent performance and efficient power management capabilities, MTB55N03J3-VB has become an ideal choice for a variety of applications, especially in high current and low voltage circuits, providing a reliable solution for various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
