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MTB50N06HD-VB Product details

Product introduction:

MTB50N06HD-VB Product Introduction

**MTB50N06HD-VB** is a high-performance single N-channel MOSFET in a **TO263 package**, designed for high voltage and high current applications. It has a **60V drain-source voltage (VDS)** and a **±20V gate-source voltage (VGS)**, and can be widely used in power management and switching circuits. The device has an on-resistance of only **11mΩ** at **VGS=10V** and **12mΩ** at **VGS=4.5V**, which enables it to maintain low conduction losses under high current conditions (up to **75A**), thereby significantly improving system efficiency. **Trench technology** enables it to have fast switching characteristics, suitable for high-frequency applications, ensuring reliability and performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 75A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 75A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
MTB50N06HD-VB Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 75A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C

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Domain and module applications:

Applications and module examples

1. **Power management**: The MTB50N06HD-VB is ideal for use in efficient power supplies and DC-DC converters, especially in laptops, desktops and industrial equipment. Its low on-resistance ensures reduced power consumption when high current is transmitted, improving the energy efficiency of the system.

2. **Motor control**: This MOSFET can be used in motor drive circuits, especially for small motors (such as brushless DC motors), playing a role in electric vehicles, robots and industrial automation equipment, achieving efficient motor control and drive.

3. **LED lighting**: The MTB50N06HD-VB is suitable for switching elements in LED drive circuits, capable of providing high currents and ensuring fast response. This makes it widely used in both commercial and home lighting.

4. **Charger and Battery Management System (BMS)**: In battery charging and management systems, the device can be used as a switching element to control the battery charging and discharging process, ensuring the safety and efficiency of charging, and is widely used in electric vehicles and renewable energy storage systems.

5. **Consumer Electronics**: The device is suitable for power switches in various consumer electronics products, such as smartphones, tablets and other portable devices, providing efficient power management and control.

With its high current capability, low conduction loss and compact TO263 package, the MTB50N06HD-VB is an ideal choice for various efficient power management and switching circuits, especially in application scenarios that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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