MTB50N06HD-VB Product details
Product introduction:
**MTB50N06HD-VB** is a high-performance single N-channel MOSFET in a **TO263 package**, designed for high voltage and high current applications. It has a **60V drain-source voltage (VDS)** and a **±20V gate-source voltage (VGS)**, and can be widely used in power management and switching circuits. The device has an on-resistance of only **11mΩ** at **VGS=10V** and **12mΩ** at **VGS=4.5V**, which enables it to maintain low conduction losses under high current conditions (up to **75A**), thereby significantly improving system efficiency. **Trench technology** enables it to have fast switching characteristics, suitable for high-frequency applications, ensuring reliability and performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 75A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications:
1. **Power management**: The MTB50N06HD-VB is ideal for use in efficient power supplies and DC-DC converters, especially in laptops, desktops and industrial equipment. Its low on-resistance ensures reduced power consumption when high current is transmitted, improving the energy efficiency of the system.
2. **Motor control**: This MOSFET can be used in motor drive circuits, especially for small motors (such as brushless DC motors), playing a role in electric vehicles, robots and industrial automation equipment, achieving efficient motor control and drive.
3. **LED lighting**: The MTB50N06HD-VB is suitable for switching elements in LED drive circuits, capable of providing high currents and ensuring fast response. This makes it widely used in both commercial and home lighting.
4. **Charger and Battery Management System (BMS)**: In battery charging and management systems, the device can be used as a switching element to control the battery charging and discharging process, ensuring the safety and efficiency of charging, and is widely used in electric vehicles and renewable energy storage systems.
5. **Consumer Electronics**: The device is suitable for power switches in various consumer electronics products, such as smartphones, tablets and other portable devices, providing efficient power management and control.
With its high current capability, low conduction loss and compact TO263 package, the MTB50N06HD-VB is an ideal choice for various efficient power management and switching circuits, especially in application scenarios that require high performance and high reliability.
Technical support:
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