MTB50N06EL-VB Product details
Product introduction:
The MTB50N06EL-VB is a **single N-channel MOSFET** in a **TO263** package with a **60V drain-source voltage (VDS)** and **±20V gate voltage (VGS)**. This device is designed for high-power, high-efficiency applications and supports a drain current (ID) of up to **75A**. By adopting **Trench technology**, the MTB50N06EL-VB achieves very low on-resistance of **12mΩ (VGS = 4.5V)** and **11mΩ (VGS = 10V)**, respectively, ensuring low loss and high efficiency under high current operating conditions. This makes it very suitable for power management, motor control and other applications requiring high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-------------------------------------|
| **Package type** | TO263 | Suitable for surface mounting, with excellent heat dissipation performance|
| **Configuration** | Single N-Channel | Single N-channel, supporting efficient switch control|
| **VDS** | 60V | Drain-source voltage, suitable for medium voltage applications|
| **VGS (absolute value)** | ±20V | Gate voltage tolerance range|
| **Vth** | 1.7V | Gate turn-on voltage, ensuring stable startup|
| **RDS(ON)** | 12mΩ @ VGS=4.5V; 11mΩ @ VGS=10V | On-resistance, suitable for high current applications|
| **ID** | 75A | Drain current, meeting high current requirements|
| **Technology** | Trench | Trench technology, achieving low loss and high efficiency|
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Domain and module applications:
1. **Power management system**
MTB50N06EL-VB is very suitable for **power management systems**, such as DC-DC converters and power switches. Its high current carrying capacity and low on-resistance ensure stable power output with high efficiency, suitable for power management of various electronic devices.
2. **Motor drive control**
In **motor control applications**, this MOSFET can be used to drive brushless DC motors (BLDC) or stepper motors. Due to its high drain current of up to **75A**, it can withstand high transient currents during motor startup and operation, improving the response speed and efficiency of motor control.
3. **LED lighting system**
In **LED lighting modules**, MTB50N06EL-VB can be used as an efficient switch to control the brightness and power of LEDs. Its low on-resistance minimizes energy loss during dimming and improves the energy efficiency of LED lighting.
4. **Automotive Electronic Systems**
The device is also well suited for **automotive electronics**, such as electric power steering (EPS) and electric window control. The MTB50N06EL-VB operates under high current and high load conditions, ensuring the reliability and safety of automotive systems.
5. **Industrial Automation Equipment**
In the **industrial automation** field, the MTB50N06EL-VB can be used for power control and drive circuits, helping to achieve efficient motor control and power management of mechanical equipment, and adapting to dynamic load changes.
The MTB50N06EL-VB is a high-performance, low-loss single N-channel MOSFET that is widely used in power management, motor control, LED lighting, automotive electronics and other fields, providing reliable solutions for a variety of modern electronic devices.
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