中文
English
MTB50N03-VB Product details
Back to previous pageProduct introduction：
1. MTB50N03-VB Product Introduction
MTB50N03-VB is a high-performance **single N-channel** MOSFET, using **TO263 package**, designed for high-efficiency power management and switching applications. The device has a drain-source voltage (VDS) of up to **30V**, a gate-source voltage (VGS) of up to ±20V, and a strong load-carrying capacity, capable of supporting a drain current of up to **50A**. MTB50N03-VB uses advanced **Trench technology**, with an on-resistance of only **18mΩ** at **VGS = 4.5V**, and even lower to **12mΩ** at **VGS = 10V**, which enables the device to significantly reduce power consumption and heat loss in high-frequency applications. MTB50N03-VB is suitable for various electronic products with high requirements for efficiency and reliability.
---
MTB50N03-VB is a high-performance **single N-channel** MOSFET, using **TO263 package**, designed for high-efficiency power management and switching applications. The device has a drain-source voltage (VDS) of up to **30V**, a gate-source voltage (VGS) of up to ±20V, and a strong load-carrying capacity, capable of supporting a drain current of up to **50A**. MTB50N03-VB uses advanced **Trench technology**, with an on-resistance of only **18mΩ** at **VGS = 4.5V**, and even lower to **12mΩ** at **VGS = 10V**, which enables the device to significantly reduce power consumption and heat loss in high-frequency applications. MTB50N03-VB is suitable for various electronic products with high requirements for efficiency and reliability.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. MTB50N03-VB Detailed parameter description
| Parameters | Specifications|
|--------------------|------------------------------|
| **Package** | TO263 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (VDS)** | 30 V |
| **Gate-Source Voltage (VGS)** | ±20 V |
| **Threshold Voltage (Vth)** | 1.7 V |
| **On-Resistance (RDS(ON))** | 18 mΩ @ VGS = 4.5 V |
| | 12 mΩ @ VGS = 10 V |
| **Drain Current (ID)** | 50 A |
| **Technology** | Trench |
The low on-resistance and high current carrying capability of this MOSFET make it an ideal choice for high-efficiency power supply design.
---
| Parameters | Specifications|
|--------------------|------------------------------|
| **Package** | TO263 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (VDS)** | 30 V |
| **Gate-Source Voltage (VGS)** | ±20 V |
| **Threshold Voltage (Vth)** | 1.7 V |
| **On-Resistance (RDS(ON))** | 18 mΩ @ VGS = 4.5 V |
| | 12 mΩ @ VGS = 10 V |
| **Drain Current (ID)** | 50 A |
| **Technology** | Trench |
The low on-resistance and high current carrying capability of this MOSFET make it an ideal choice for high-efficiency power supply design.
---
Domain and module applications：
III. Application fields and modules
1. **Power management system**
In switching power supplies and DC-DC converters, MTB50N03-VB can be used to achieve efficient power conversion and management, optimize power efficiency, and reduce energy consumption. It is suitable for laptops, chargers and other portable devices.
2. **Motor drive**
This MOSFET can be used in motor control circuits, especially the drive modules of brushless DC motors and stepper motors. It can handle currents up to **50A**, provide stable current control for motors, and improve system performance.
3. **LED lighting**
In LED drive circuits, MTB50N03-VB can effectively control the working state of high-power LEDs. It is particularly suitable for industrial lighting, automotive LEDs and decorative lamps, and provides efficient brightness adjustment capabilities.
4. **Battery Management System (BMS)**
In the battery management system, this device is used to control the charge and discharge of the battery to ensure the safety and efficiency of the battery, and is suitable for electric vehicles and energy storage systems.
5. **Communication Equipment**
This MOSFET is also widely used in the power modules of communication equipment, providing fast switching performance, suitable for signal amplifiers and wireless devices, ensuring the stability and reliability of signal transmission.
MTB50N03-VB
1. **Power management system**
In switching power supplies and DC-DC converters, MTB50N03-VB can be used to achieve efficient power conversion and management, optimize power efficiency, and reduce energy consumption. It is suitable for laptops, chargers and other portable devices.
2. **Motor drive**
This MOSFET can be used in motor control circuits, especially the drive modules of brushless DC motors and stepper motors. It can handle currents up to **50A**, provide stable current control for motors, and improve system performance.
3. **LED lighting**
In LED drive circuits, MTB50N03-VB can effectively control the working state of high-power LEDs. It is particularly suitable for industrial lighting, automotive LEDs and decorative lamps, and provides efficient brightness adjustment capabilities.
4. **Battery Management System (BMS)**
In the battery management system, this device is used to control the charge and discharge of the battery to ensure the safety and efficiency of the battery, and is suitable for electric vehicles and energy storage systems.
5. **Communication Equipment**
This MOSFET is also widely used in the power modules of communication equipment, providing fast switching performance, suitable for signal amplifiers and wireless devices, ensuring the stability and reliability of signal transmission.
MTB50N03-VB
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
