MTB4N80ET4-VB Product details
Product introduction:
The MTB4N80ET4-VB is a single N-channel power MOSFET in a **TO263 package**, suitable for applications requiring high voltage blocking capability and reliability. The device has a drain-source voltage (**VDS**) of up to 800V and a high gate withstand voltage (**VGS**) of ±30V, ensuring stable operation in harsh environments. It uses **SJ (Super Junction) Multi-EPI technology**, which greatly improves switching efficiency and reduces conduction losses, making it very suitable for high-efficiency switching power supplies and industrial equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Specification** |
|--------------------|------------------------|
| **Model** | MTB4N80ET4-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 800V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 850mΩ @ VGS=10V |
| **Drain current (ID)** | 7A |
| **Technology** | SJ Multi-EPI |
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Domain and module applications:
**MTB4N80ET4-VB** is suitable for a variety of high voltage and high power demand applications, the following are specific examples:
1. **Power modules and industrial power supplies**
- Suitable for switch mode power supplies (SMPS) in industrial equipment, especially circuits that require high blocking voltage.
- The 800V drain-source voltage ensures that it can work normally in industrial power grids and high-voltage power supply systems and improves conversion efficiency.
2. **Lighting systems (HID and LED drivers)**
- In high-power HID lamp drivers and high-power LED lighting equipment, this MOSFET ensures efficient power conversion and low heat dissipation losses.
3. **Electric vehicle charging system**
- In the high-voltage charging module of electric vehicles, the MTB4N80ET4-VB can stably handle the energy transfer between the charging station and the on-board battery system.
4. **Grid inverter**
- In inverter modules for photovoltaic systems and wind power generation, this MOSFET is suitable for high-voltage DC-AC conversion, providing stable output and improving inverter efficiency.
5. **Home appliance control and HVAC equipment**
- Control modules for HVAC systems and large home appliances ensure reliable switching operations in motor drives and control systems and reduce power consumption.
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The high-voltage capability and excellent switching characteristics of the MTB4N80ET4-VB make it an ideal choice for industrial power supplies, electric vehicles, lighting systems and home appliances. In these applications, the device not only provides higher reliability, but also effectively reduces energy loss.
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