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MTB30N03-VB Product details
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**MTB30N03-VB MOSFET Product Introduction**
**MTB30N03-VB** is a high-efficiency **single N-channel MOSFET** in **TO-263 package**, designed for high current and low voltage applications. Its **drain-source voltage (VDS)** is **30V**, and it supports a maximum **±20V gate-source voltage (VGS)**, ensuring stable operation in a variety of application environments. The threshold voltage (Vth) of the device is **1.7V**, and it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is **12mΩ** at **VGS = 10V** and **18mΩ** at **VGS = 4.5V**, which can effectively reduce energy loss and improve efficiency. The **maximum continuous drain current (ID)** of the device reaches **50A**, which is suitable for high power applications. Using **Trench technology**, this MOSFET has extremely low losses and excellent thermal management performance when turned on, making it very suitable for power management and drive modules.
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**MTB30N03-VB** is a high-efficiency **single N-channel MOSFET** in **TO-263 package**, designed for high current and low voltage applications. Its **drain-source voltage (VDS)** is **30V**, and it supports a maximum **±20V gate-source voltage (VGS)**, ensuring stable operation in a variety of application environments. The threshold voltage (Vth) of the device is **1.7V**, and it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is **12mΩ** at **VGS = 10V** and **18mΩ** at **VGS = 4.5V**, which can effectively reduce energy loss and improve efficiency. The **maximum continuous drain current (ID)** of the device reaches **50A**, which is suitable for high power applications. Using **Trench technology**, this MOSFET has extremely low losses and excellent thermal management performance when turned on, making it very suitable for power management and drive modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**MTB30N03-VB Detailed Parameter Description**
| **Parameter** | **Value** | **Description** |
|--------------------------|---------------------------------|---------------------------------------------------|
| **Package** | TO-263 | Surface mount package, suitable for power applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Commonly used in low-side switches and power management circuits. |
| **VDS (Drain-Source Voltage)** | 30V | Suitable for low-voltage power supplies and switching circuits. |
| **VGS (Gate-Source Voltage)** | ±20V | Supports a wide range of operating voltages and enhances design flexibility. |
| **Vth (Threshold Voltage)** | 1.7V | Turns on quickly at low gate voltage, suitable for low-power circuits. |
| **RDS(ON) @ VGS = 4.5V** | 18mΩ | Provides better on-state performance at lower gate voltages. |
| **RDS(ON) @ VGS = 10V** | 12mΩ | Provides lower on-resistance at high gate voltages, reducing power consumption. |
| **ID (Continuous Drain Current)** | 50A | Provides high current capability for high power applications. |
| **Technology** | Trench | Provides low on-resistance and high efficiency, optimizing thermal management performance. |
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| **Parameter** | **Value** | **Description** |
|--------------------------|---------------------------------|---------------------------------------------------|
| **Package** | TO-263 | Surface mount package, suitable for power applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Commonly used in low-side switches and power management circuits. |
| **VDS (Drain-Source Voltage)** | 30V | Suitable for low-voltage power supplies and switching circuits. |
| **VGS (Gate-Source Voltage)** | ±20V | Supports a wide range of operating voltages and enhances design flexibility. |
| **Vth (Threshold Voltage)** | 1.7V | Turns on quickly at low gate voltage, suitable for low-power circuits. |
| **RDS(ON) @ VGS = 4.5V** | 18mΩ | Provides better on-state performance at lower gate voltages. |
| **RDS(ON) @ VGS = 10V** | 12mΩ | Provides lower on-resistance at high gate voltages, reducing power consumption. |
| **ID (Continuous Drain Current)** | 50A | Provides high current capability for high power applications. |
| **Technology** | Trench | Provides low on-resistance and high efficiency, optimizing thermal management performance. |
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Domain and module applications：
**Application examples of MTB30N03-VB**
1. **Power management system**
This MOSFET is commonly used in **DC-DC converters** and **synchronous rectification circuits**. Its low RDS(ON) characteristics can reduce energy loss and improve system conversion efficiency, making it an ideal choice for notebook computers, server power supplies and consumer electronic devices.
2. **Motor drive and control**
In **motor control modules**, MTB30N03-VB can be used to control the start, stop and speed of small motors, suitable for motor drive applications in power tools and household appliances.
3. **Battery protection and charging management**
Its high current capability makes it suitable for **lithium battery protection circuits** and **electric vehicle charging systems**, which can prevent overcurrent damage and provide stable power management.
4. **Industrial control equipment**
Due to its high current carrying capacity and reliable performance, this MOSFET can also be used in the switching circuits in **industrial automation systems** to achieve high efficiency and stable control of the equipment.
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**MTB30N03-VB** has a wide range of applications in consumer electronics, industrial control, automotive electronics and power management due to its low on-resistance, high current carrying capacity and excellent heat dissipation performance. It is an ideal choice for optimizing high-efficiency system design.
1. **Power management system**
This MOSFET is commonly used in **DC-DC converters** and **synchronous rectification circuits**. Its low RDS(ON) characteristics can reduce energy loss and improve system conversion efficiency, making it an ideal choice for notebook computers, server power supplies and consumer electronic devices.
2. **Motor drive and control**
In **motor control modules**, MTB30N03-VB can be used to control the start, stop and speed of small motors, suitable for motor drive applications in power tools and household appliances.
3. **Battery protection and charging management**
Its high current capability makes it suitable for **lithium battery protection circuits** and **electric vehicle charging systems**, which can prevent overcurrent damage and provide stable power management.
4. **Industrial control equipment**
Due to its high current carrying capacity and reliable performance, this MOSFET can also be used in the switching circuits in **industrial automation systems** to achieve high efficiency and stable control of the equipment.
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**MTB30N03-VB** has a wide range of applications in consumer electronics, industrial control, automotive electronics and power management due to its low on-resistance, high current carrying capacity and excellent heat dissipation performance. It is an ideal choice for optimizing high-efficiency system design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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