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MTB1306T4G-VB Product details

Product introduction:

1. MTB1306T4G-VB Product Introduction

The MTB1306T4G-VB is a **single N-channel MOSFET** in a **TO263** package with a **30V drain-source voltage (VDS)** and **±20V gate voltage (VGS)**. This device is designed for high-current, high-power applications and supports a drain current (ID) of up to **98A**. Through **Trench technology**, the MTB1306T4G-VB achieves extremely low on-resistance - **2.7mΩ (VGS = 4.5V)** and **2.4mΩ (VGS = 10V)**, ensuring excellent energy efficiency and low losses in high-current applications. This makes it ideal for scenarios that require efficient switching control and low power consumption, such as motor control, power management, and automotive electronic systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
II. Detailed parameter description of MTB1306T4G-VB

| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-------------------------------------|
| **Package type** | TO263 | Suitable for surface mounting, with good heat dissipation performance|
| **Configuration** | Single N-Channel | Single N-channel, supporting efficient switching|
| **VDS** | 30V | Drain-source voltage, supporting medium and low voltage applications|
| **VGS (absolute value)** | ±20V | Gate voltage tolerance range|
| **Vth** | 1.7V | Gate turn-on voltage, ensuring stable startup|
| **RDS(ON)** | 2.7mΩ @ VGS=4.5V; 2.4mΩ @ VGS=10V | On-resistance, suitable for high current operation|
| **ID** | 98A | Drain current, suitable for high current demand scenarios|
| **Technology** | Trench | Trench technology, low loss and high efficiency|

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Domain and module applications:

III. Application fields and module examples

1. **Motor control**
The MTB1306T4G-VB is very suitable for **motor control systems**, such as brushless DC motors (BLDC) and stepper motors. Its high current carrying capacity (98A) and low on-resistance ensure the high efficiency of the motor during startup and operation, reduce energy loss, and improve the overall performance of the system.

2. **Power management and DC-DC converter**
In **DC-DC converters and regulated power supplies**, the MTB1306T4G-VB can be used as a switching element to achieve efficient power conversion. Its low on-resistance ensures minimal switching losses and improves the efficiency and reliability of the power module.

3. **Automotive electronic systems**
In **automotive electronics**, this MOSFET can be used in electric power steering systems (EPS), electric pumps and electronic control units (ECUs) to ensure high power and high efficiency power management to meet the dynamic load requirements in automotive electrical systems.

4. **Lighting control**
The MTB1306T4G-VB is also suitable for **LED lighting systems**, especially high brightness and power driver modules. In high current lighting applications, the device can ensure a stable current supply and reduce heat generation, improving the stability and life of the system.

5. **Industrial automation equipment**
In the **industrial automation field**, the device is used for control modules, power supply equipment and relay switches. Due to its low conduction loss and high current carrying capacity, the MTB1306T4G-VB can improve the overall operating efficiency and reliability of the system.

The MTB1306T4G-VB is an ideal high current MOSFET designed for a variety of complex application scenarios. It is widely used in motor control, power conversion, automotive electronics and industrial automation, meeting a variety of application needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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