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MT3055L-VB Product details
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**Product Introduction: MT3055L-VB MOSFET**
The MT3055L-VB is a high-performance **N-channel MOSFET** in a **TO252 package**, designed for high current and high efficiency applications. With a maximum drain-source voltage (VDS) of 60V, this MOSFET is suitable for a variety of medium voltage circuits. Its gate-source voltage (VGS) is up to ±20V, providing flexible control options. The threshold voltage (Vth) is 3V, ensuring rapid turn-on at lower voltages. The MT3055L-VB has the advantage of ultra-low on-resistance (RDS(ON)), which is 12mΩ and 4.5mΩ at 4.5V and 10V gate voltages, respectively, which enables it to operate effectively at drain currents up to 97A. This low on-resistance feature greatly improves current handling capability while reducing power consumption, making it an ideal choice for applications such as power management, load switching, and motor drives.
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The MT3055L-VB is a high-performance **N-channel MOSFET** in a **TO252 package**, designed for high current and high efficiency applications. With a maximum drain-source voltage (VDS) of 60V, this MOSFET is suitable for a variety of medium voltage circuits. Its gate-source voltage (VGS) is up to ±20V, providing flexible control options. The threshold voltage (Vth) is 3V, ensuring rapid turn-on at lower voltages. The MT3055L-VB has the advantage of ultra-low on-resistance (RDS(ON)), which is 12mΩ and 4.5mΩ at 4.5V and 10V gate voltages, respectively, which enables it to operate effectively at drain currents up to 97A. This low on-resistance feature greatly improves current handling capability while reducing power consumption, making it an ideal choice for applications such as power management, load switching, and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Medium package, suitable for high power applications|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET design|
| **VDS (drain-source voltage)** | 60V | Maximum drain-source voltage, suitable for medium voltage applications|
| **VGS (gate-source voltage)** | ±20V | Maximum allowed gate-source voltage|
| **Vth (threshold voltage)** | 3V | Minimum gate voltage required to start the MOSFET|
| **RDS(ON)@VGS=4.5V** | 12mΩ | On-resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 4.5mΩ | On-resistance at 10V gate voltage |
| **ID (Drain Current)** | 97A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for enhanced current handling and efficiency |
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| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Medium package, suitable for high power applications|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET design|
| **VDS (drain-source voltage)** | 60V | Maximum drain-source voltage, suitable for medium voltage applications|
| **VGS (gate-source voltage)** | ±20V | Maximum allowed gate-source voltage|
| **Vth (threshold voltage)** | 3V | Minimum gate voltage required to start the MOSFET|
| **RDS(ON)@VGS=4.5V** | 12mΩ | On-resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 4.5mΩ | On-resistance at 10V gate voltage |
| **ID (Drain Current)** | 97A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for enhanced current handling and efficiency |
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Domain and module applications：
**Application fields and module examples**
1. **Power management system**
- **Application example**: For switching power supplies and DC-DC converters
- **Advantages**: The low on-resistance and high current capability of the MT3055L-VB make it suitable for high-efficiency power management, which can significantly reduce energy loss and improve conversion efficiency.
2. **Load switch application**
- **Application example**: Load switching in battery-powered devices
- **Advantages**: The MOSFET can switch quickly at a low gate voltage, providing fast load switching capabilities, suitable for power control of portable devices such as smartphones and tablets.
3. **Motor drive**
- **Application example**: Drive circuit for small DC motors
- **Advantages**: The high current handling capability of the MT3055L-VB supports high-efficiency motor drive, enabling precise speed control and forward and reverse functions, and is widely used in home appliances, robots and other fields.
4. **Battery Management System**
- **Application Example**: Battery Management in Electric Vehicles and Energy Storage Systems
- **Advantages**: This MOSFET can provide reliable control during battery charging and discharging, ensuring system stability and safety and extending battery life.
With its excellent performance and wide applicability, MT3055L-VB is an indispensable component of modern electronic devices and is suitable for many fields such as power management, load switching and motor drive to meet the needs of efficiency and reliability.
1. **Power management system**
- **Application example**: For switching power supplies and DC-DC converters
- **Advantages**: The low on-resistance and high current capability of the MT3055L-VB make it suitable for high-efficiency power management, which can significantly reduce energy loss and improve conversion efficiency.
2. **Load switch application**
- **Application example**: Load switching in battery-powered devices
- **Advantages**: The MOSFET can switch quickly at a low gate voltage, providing fast load switching capabilities, suitable for power control of portable devices such as smartphones and tablets.
3. **Motor drive**
- **Application example**: Drive circuit for small DC motors
- **Advantages**: The high current handling capability of the MT3055L-VB supports high-efficiency motor drive, enabling precise speed control and forward and reverse functions, and is widely used in home appliances, robots and other fields.
4. **Battery Management System**
- **Application Example**: Battery Management in Electric Vehicles and Energy Storage Systems
- **Advantages**: This MOSFET can provide reliable control during battery charging and discharging, ensuring system stability and safety and extending battery life.
With its excellent performance and wide applicability, MT3055L-VB is an indispensable component of modern electronic devices and is suitable for many fields such as power management, load switching and motor drive to meet the needs of efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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