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MT10N20C-VB Product details

Product introduction:

**MT10N20C-VB MOSFET Product Introduction**
**MT10N20C-VB** is a **single N-channel MOSFET** in a **TO220 package**, designed for high voltage and high current applications. The device supports **200V drain-source voltage (VDS)** and **gate-source voltage (VGS)** of ±20V, and is based on **Trench technology** to provide lower on-resistance (RDS(ON)). This MOSFET has an RDS(ON) of 270mΩ at VGS = 10V and can carry **10A continuous current**. The MT10N20C-VB is particularly suitable for scenarios such as industrial power systems, high-voltage circuits, and motor drives, and is an ideal choice for efficient power control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 10A 270mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
**MT10N20C-VB Detailed Parameter Description**

| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------------|--------------------------------------------------|
| **Package** | TO220 | Suitable for applications requiring good heat dissipation performance and supports large current. |
| **Configuration** | Single N-channel | Mainly used in low-side switches and power conversion circuits. |
| **VDS (Drain-Source Voltage)** | 200V | Supports higher voltage applications, suitable for motor drives and industrial equipment. |
| **VGS (Gate-Source Voltage)** | ±20V | Maximum value of the gate-source voltage to ensure high-voltage stable operation. |
| **Vth (Threshold Voltage)** | 3V | The device starts to conduct when the gate voltage reaches this value. |
| **RDS(ON) @ VGS = 4.5V** | 310mΩ | On-resistance at low gate voltage, suitable for applications with low power consumption requirements. |
| **RDS(ON) @ VGS = 10V** | 270mΩ | Provides lower on-resistance for high-efficiency applications. |
| **ID (Continuous Drain Current)** | 10A | Maximum current that can be carried, supporting power management and motor control. |
| **Technology** | Trench | Improves current handling capability and reduces conduction losses. |

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Domain and module applications:

**Application Examples of MT10N20C-VB**

1. **Industrial Power Management System**
MT10N20C-VB can be used in **high voltage power converter** and **uninterruptible power supply (UPS)** systems. Its 200V withstand voltage performance allows the device to achieve stable high voltage conversion and power distribution in industrial-grade power modules.

2. **Motor Drive and Control**
In power tools and industrial automation systems, this MOSFET is often used to drive **DC motors** and **stepper motors**. With its high current capability and low conduction loss, it ensures efficient operation and stable control of the system.

3. **Lighting and New Energy Equipment**
This MOSFET is suitable for **LED drive circuits** and **solar inverters**, where the device needs to perform efficient energy conversion at higher voltages. The good heat dissipation characteristics of the TO220 package also ensure stability under long-term operation.

4. **Automotive Electronics Applications**
In **Electric Vehicle (EV) charging management** or **Power Distribution Module**, MT10N20C-VB provides reliable high-voltage control to ensure the stability of current distribution and adapt to the needs of harsh environments.

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**MT10N20C-VB** As a **high-voltage, high-current MOSFET**, with its excellent conduction performance and heat dissipation capability of TO220 package, it is widely used in industrial power supply, lighting, motor control and automotive electronics fields, and is an ideal choice for designing efficient and reliable power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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