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MP6M12-VB Product details
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MP6M12-VB Product Introduction
MP6M12-VB is a dual-channel MOSFET in a **SOT89-6 package**, integrating an **N-channel** and a **P-channel** device. It is designed to support **±30V drain-source voltage (V_DS)** and **±20V gate-source voltage (V_GS)**, with a maximum current capability of ±8A. This MOSFET uses **Trench technology** to provide lower on-resistance at different gate voltages, making it an ideal choice for switching circuits, bidirectional current control, and efficient power management.
MP6M12-VB is a dual-channel MOSFET in a **SOT89-6 package**, integrating an **N-channel** and a **P-channel** device. It is designed to support **±30V drain-source voltage (V_DS)** and **±20V gate-source voltage (V_GS)**, with a maximum current capability of ±8A. This MOSFET uses **Trench technology** to provide lower on-resistance at different gate voltages, making it an ideal choice for switching circuits, bidirectional current control, and efficient power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | 18/32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P |
Detailed parameter description
- **Model**: MP6M12-VB
- **Package**: SOT89-6
- **Configuration**: Dual channel (N+P)
- **Maximum drain-source voltage (V_DS)**: ±30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (R_DS(ON))**:
- N channel:
- 24mΩ @ V_GS = 4.5V
- 18mΩ @ V_GS = 10V
- P channel:
- 40mΩ @ V_GS = 4.5V
- 32mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: ±8A
- **Technology**: Trench
- **Model**: MP6M12-VB
- **Package**: SOT89-6
- **Configuration**: Dual channel (N+P)
- **Maximum drain-source voltage (V_DS)**: ±30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (R_DS(ON))**:
- N channel:
- 24mΩ @ V_GS = 4.5V
- 18mΩ @ V_GS = 10V
- P channel:
- 40mΩ @ V_GS = 4.5V
- 32mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: ±8A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
1. **Bidirectional switch circuit**
MP6M12-VB integrates N-channel and P-channel MOSFETs, which are very suitable for bidirectional switch circuits. It can control the inflow and outflow of current at the same time, and performs well in **battery switching and power path management**.
2. **Reverse polarity protection circuit**
Due to its N+P dual-channel configuration, this MOSFET can provide effective reverse polarity protection at the power input end, and is widely used in **battery-powered equipment and vehicle-mounted electronic equipment** to prevent reverse voltage from damaging the system.
3. **H-bridge drive**
In the **motor control module**, this MOSFET can be used as the upper and lower switches in the H-bridge circuit to ensure accurate current control and realize the forward and reverse rotation and speed regulation of the motor.
4. **Power Management Module**
This device has excellent performance in **DC-DC converters and load switches**, which can effectively reduce energy consumption and ensure efficient operation of the system, and is suitable for consumer electronics and industrial power management.
5. **Charge and discharge control**
In **Battery Management System (BMS)**, MP6M12-VB can control the charging and discharging process of the battery, prevent overcharging or over-discharging, extend battery life and ensure stable operation of the device.
6. **Portable Device and Communication Module**
This MOSFET is suitable for power switching and energy efficiency management in **smartphones, tablets and communication devices**, helping to improve battery life and optimize the power consumption performance of the device.
Due to its dual-channel configuration and excellent current control capability, MP6M12-VB provides a wide range of application solutions in multiple fields such as consumer electronics, industrial automation, and automotive electronics.
1. **Bidirectional switch circuit**
MP6M12-VB integrates N-channel and P-channel MOSFETs, which are very suitable for bidirectional switch circuits. It can control the inflow and outflow of current at the same time, and performs well in **battery switching and power path management**.
2. **Reverse polarity protection circuit**
Due to its N+P dual-channel configuration, this MOSFET can provide effective reverse polarity protection at the power input end, and is widely used in **battery-powered equipment and vehicle-mounted electronic equipment** to prevent reverse voltage from damaging the system.
3. **H-bridge drive**
In the **motor control module**, this MOSFET can be used as the upper and lower switches in the H-bridge circuit to ensure accurate current control and realize the forward and reverse rotation and speed regulation of the motor.
4. **Power Management Module**
This device has excellent performance in **DC-DC converters and load switches**, which can effectively reduce energy consumption and ensure efficient operation of the system, and is suitable for consumer electronics and industrial power management.
5. **Charge and discharge control**
In **Battery Management System (BMS)**, MP6M12-VB can control the charging and discharging process of the battery, prevent overcharging or over-discharging, extend battery life and ensure stable operation of the device.
6. **Portable Device and Communication Module**
This MOSFET is suitable for power switching and energy efficiency management in **smartphones, tablets and communication devices**, helping to improve battery life and optimize the power consumption performance of the device.
Due to its dual-channel configuration and excellent current control capability, MP6M12-VB provides a wide range of application solutions in multiple fields such as consumer electronics, industrial automation, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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