中文
English
MP6M11-VB Product details
Back to previous pageProduct introduction：
**Product Introduction: MP6M11-VB MOSFET**
MP6M11-VB is a dual-channel MOSFET in a **SOT89-6 package**, configured as a **pair of N- and P-channels**, designed for compact power supplies and current control. Its drain-source voltage (VDS) is ±30V and its gate-source voltage (VGS) range is ±20V, supporting bidirectional current switching capability. The device has threshold voltages of 1.6V (N-channel) and -1.7V (P-channel), respectively, ensuring fast response at lower drive voltages. Based on **Trench technology**, MP6M11-VB exhibits low on-resistance at gate voltages of 4.5V and 10V, respectively, providing applications with high efficiency and low loss solutions. The maximum drain current is ±8A, making it suitable for a variety of switching, power management and battery-driven applications.
---
MP6M11-VB is a dual-channel MOSFET in a **SOT89-6 package**, configured as a **pair of N- and P-channels**, designed for compact power supplies and current control. Its drain-source voltage (VDS) is ±30V and its gate-source voltage (VGS) range is ±20V, supporting bidirectional current switching capability. The device has threshold voltages of 1.6V (N-channel) and -1.7V (P-channel), respectively, ensuring fast response at lower drive voltages. Based on **Trench technology**, MP6M11-VB exhibits low on-resistance at gate voltages of 4.5V and 10V, respectively, providing applications with high efficiency and low loss solutions. The maximum drain current is ±8A, making it suitable for a variety of switching, power management and battery-driven applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | 18/32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P | ±30V | 1.6/-1.7V | ±8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+P |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | SOT89-6 | 6-pin small package for compact design|
| **Configuration** | Dual-N+P-Channel | Contains one N-channel and one P-channel MOSFET |
| **VDS (drain-source voltage)** | ±30V | Maximum drain-source voltage of N and P channels|
| **VGS (gate-source voltage)** | ±20V | Maximum allowable gate voltage|
| **Vth (threshold voltage)** | 1.6V / -1.7V | Threshold voltage of N and P channels|
| **RDS(ON)@VGS=4.5V** | 24mΩ / 40mΩ | On-resistance of N channel/P channel at 4.5V|
| **RDS(ON)@VGS=10V** | 18mΩ / 32mΩ | On-resistance of N-channel/P-channel at 10V|
| **ID(Drain Current)** | ±8A | Maximum continuous current of N-channel and P-channel|
| **Technology** | Trench | Trench technology for improved current handling and efficiency|
---
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | SOT89-6 | 6-pin small package for compact design|
| **Configuration** | Dual-N+P-Channel | Contains one N-channel and one P-channel MOSFET |
| **VDS (drain-source voltage)** | ±30V | Maximum drain-source voltage of N and P channels|
| **VGS (gate-source voltage)** | ±20V | Maximum allowable gate voltage|
| **Vth (threshold voltage)** | 1.6V / -1.7V | Threshold voltage of N and P channels|
| **RDS(ON)@VGS=4.5V** | 24mΩ / 40mΩ | On-resistance of N channel/P channel at 4.5V|
| **RDS(ON)@VGS=10V** | 18mΩ / 32mΩ | On-resistance of N-channel/P-channel at 10V|
| **ID(Drain Current)** | ±8A | Maximum continuous current of N-channel and P-channel|
| **Technology** | Trench | Trench technology for improved current handling and efficiency|
---
Domain and module applications：
**Application fields and module examples**
1. **Bidirectional current control and switching applications**
- **Application examples**: Charging management circuits for portable devices
- **Advantages**: The dual-channel design of the MP6M11-VB allows fast switching between charging and discharging, ensuring efficient control of current flow, and improving the charging speed and safety of the device.
2. **Battery drive module and protection circuit**
- **Application examples**: Suitable for battery protection systems in power tools
- **Advantages**: The N+P channel configuration enables overcharge and over-discharge protection of the battery pack, effectively extending battery life and improving system safety.
3. **Power management and DC-DC converter**
- **Application examples**: Power management systems for wearable devices and IoT modules
- **Advantages**: Low on-resistance reduces energy loss and improves conversion efficiency, making it suitable for small and efficient power supply designs.
4. **H-bridge motor drive application**
- **Application example**: H-bridge circuit for driving low-power DC motors
- **Advantages**: MP6M11-VB supports bipolar current control, making it very suitable for implementing forward and reverse control and PWM speed regulation of motors.
With its compact package, low on-resistance and dual-channel design, MP6M11-VB is widely used in modules such as battery drive, power management, load switching and motor control, especially in small electronic devices and smart applications.
1. **Bidirectional current control and switching applications**
- **Application examples**: Charging management circuits for portable devices
- **Advantages**: The dual-channel design of the MP6M11-VB allows fast switching between charging and discharging, ensuring efficient control of current flow, and improving the charging speed and safety of the device.
2. **Battery drive module and protection circuit**
- **Application examples**: Suitable for battery protection systems in power tools
- **Advantages**: The N+P channel configuration enables overcharge and over-discharge protection of the battery pack, effectively extending battery life and improving system safety.
3. **Power management and DC-DC converter**
- **Application examples**: Power management systems for wearable devices and IoT modules
- **Advantages**: Low on-resistance reduces energy loss and improves conversion efficiency, making it suitable for small and efficient power supply designs.
4. **H-bridge motor drive application**
- **Application example**: H-bridge circuit for driving low-power DC motors
- **Advantages**: MP6M11-VB supports bipolar current control, making it very suitable for implementing forward and reverse control and PWM speed regulation of motors.
With its compact package, low on-resistance and dual-channel design, MP6M11-VB is widely used in modules such as battery drive, power management, load switching and motor control, especially in small electronic devices and smart applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
