MP6K12-VB Product details
Product introduction:
MP6K12-VB is a **dual-N+N-Channel** MOSFET in a compact **SOT89-6 package**, suitable for a variety of applications requiring efficient switching and current control. The **drain-source voltage (VDS)** of the device is 30V, supporting low-voltage applications; the gate-source voltage (VGS) range is ±20V, ensuring the stability of the device in complex voltage environments. **The threshold voltage (Vth)** is 1.7V, allowing it to work efficiently at a lower drive voltage. Its on-resistance (RDS(ON)) is 26mΩ and 22mΩ at 4.5V and 10V, respectively, supporting high current conduction, with a maximum drain current (ID) of 5.2A. MP6K12-VB uses **Trench (trench) technology**, providing lower switching losses and higher efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | 30V | 1.7V | 5.2A | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | 30V | 1.7V | 5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | 30V | 1.7V | 5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N |
| **Parameter** | **Description** | **Value** |
|--------------------------|------------------------------------|-------------------------------|
| **Model** | - | MP6K12-VB |
| **Package** | - | SOT89-6 |
| **Configuration** | - | Dual N+N-channel|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 30V |
| **Gate-source voltage (VGS)** | Maximum withstand voltage| ±20V |
| **Threshold voltage (Vth)** | Minimum gate voltage when turned on| 1.7V |
| **On-resistance (RDS(ON))** | When VGS = 4.5V| 26mΩ |
| | When VGS = 10V| 22mΩ |
| **Drain Current (ID)** | Maximum Continuous Current| 5.2A |
| **Operating Technology** | - | Trench |
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Domain and module applications:
1. **Power Management**
MP6K12-VB is suitable for **DC-DC converters** and **battery management systems**. Its efficient current conduction capability helps reduce losses during power conversion and extend the battery life of the device.
2. **Consumer Electronics**
In **smartphones, tablets** and other portable devices, this MOSFET can be used for **power switches** and **charging management modules** to ensure effective distribution of current between different subsystems.
3. **Motor Control**
Suitable for **small DC motor drive** scenarios such as fans, pumps and other small appliances. Its low on-resistance reduces the heat generated when the motor is running and improves the overall system efficiency.
4. **LED Drivers**
In LED lighting applications, this MOSFET supports **constant current control** to ensure stable brightness of LED modules while reducing energy consumption and extending service life.
5. **Industrial Control and Automation**
MP6K12-VB is also suitable for signal switching and power control in **automation equipment and sensor modules** to improve system response speed and reliability.
MP6K12-VB is an ideal choice for various power management, drive control and consumer electronics fields with its **high efficiency, low on-resistance** and stable switching performance. The device can ensure that the system maintains reliability and efficiency under various operating conditions, and adapts to a wide range of industrial and consumer application needs.
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