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MP6K11-VB Product details
Back to previous pageProduct introduction：
1. MP6K11-VB Product Introduction
MP6K11-VB is a **dual N-channel MOSFET**, using **SOT89-6 package**, designed for high-efficiency and low-power circuit applications. The device has a drain-source voltage (**VDS**) of 30V, a maximum gate-source voltage (**VGS**) of ±20V, and a turn-on voltage (**Vth**) of 1.7V, which is suitable for a variety of low-voltage control occasions. Its on-resistance (**RDS(ON)**) at a gate voltage of 4.5V is 26mΩ, and it is further reduced to 22mΩ at 10V, ensuring efficient transmission of power and low-energy operation. The rated drain current is **5.2A**, which can meet the requirements of high current loads. The use of advanced **Trench (trench type) technology** makes the device excellent in switching speed and conduction performance, and is an indispensable component in modern electronic devices.
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MP6K11-VB is a **dual N-channel MOSFET**, using **SOT89-6 package**, designed for high-efficiency and low-power circuit applications. The device has a drain-source voltage (**VDS**) of 30V, a maximum gate-source voltage (**VGS**) of ±20V, and a turn-on voltage (**Vth**) of 1.7V, which is suitable for a variety of low-voltage control occasions. Its on-resistance (**RDS(ON)**) at a gate voltage of 4.5V is 26mΩ, and it is further reduced to 22mΩ at 10V, ensuring efficient transmission of power and low-energy operation. The rated drain current is **5.2A**, which can meet the requirements of high current loads. The use of advanced **Trench (trench type) technology** makes the device excellent in switching speed and conduction performance, and is an indispensable component in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | 30V | 1.7V | 5.2A | 22mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | 30V | 1.7V | 5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N | 30V | 1.7V | 5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89-6 | Dual-N+N |
2. Detailed parameter description of MP6K11-VB
| **Parameter** | **Value** | **Description** |
|---------------------------|--------------------------|----------------------------------|
| **Package type** | SOT89-6 | Small package, suitable for compact circuit design|
| **Configuration** | Dual N-channel | Contains two N-channel MOSFETs |
| **VDS (drain-source voltage)** | 30V | Maximum withstand drain-source voltage|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage withstand capability|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 26mΩ | On-resistance when 4.5V gate drive|
| **RDS(ON)@VGS=10V** | 22mΩ | On-resistance at 10V gate drive|
| **ID (drain current)** | 5.2A | Maximum supported drain current|
| **Technology** | Trench technology | Provides low conduction losses and high switching speeds|
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| **Parameter** | **Value** | **Description** |
|---------------------------|--------------------------|----------------------------------|
| **Package type** | SOT89-6 | Small package, suitable for compact circuit design|
| **Configuration** | Dual N-channel | Contains two N-channel MOSFETs |
| **VDS (drain-source voltage)** | 30V | Maximum withstand drain-source voltage|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage withstand capability|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 26mΩ | On-resistance when 4.5V gate drive|
| **RDS(ON)@VGS=10V** | 22mΩ | On-resistance at 10V gate drive|
| **ID (drain current)** | 5.2A | Maximum supported drain current|
| **Technology** | Trench technology | Provides low conduction losses and high switching speeds|
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Domain and module applications：
III. MP6K11-VB Application Fields and Module Examples
1. **Power Management System**
MP6K11-VB can be used as a switching element in **DC-DC converter**, supporting efficient voltage conversion and current transmission. It is widely used in power adapters and charging systems to meet the power supply needs of various electronic devices.
2. **Load Switch Application**
This MOSFET is used as a load switch in **smartphones, tablets** and other portable devices to achieve fast switching of power, extend battery life and improve system energy efficiency.
3. **LED Drive Circuit**
In **LED lighting system**, MP6K11-VB can be used to control the brightness and switching of LEDs, improve the flexibility of the lighting system, and reduce power consumption.
4. **Automotive Electronic Systems**
The device can be used in **power windows, seat adjustment** and **light control** in automotive electrical systems to ensure efficient and stable power management and meet the high performance requirements of modern automobiles for electronic systems.
5. **Industrial Control and Automation**
MP6K11-VB is suitable for **motor drive and sensor control**, and can meet the needs of industrial equipment for high switching speed and low power consumption. It is an indispensable component in industrial automation.
With its excellent **current carrying capacity** and **low on-resistance**, MP6K11-VB has demonstrated excellent performance in a variety of applications, suitable for **power management, automotive electronics, LED drive** and **industrial control** and other fields, providing users with efficient solutions.
1. **Power Management System**
MP6K11-VB can be used as a switching element in **DC-DC converter**, supporting efficient voltage conversion and current transmission. It is widely used in power adapters and charging systems to meet the power supply needs of various electronic devices.
2. **Load Switch Application**
This MOSFET is used as a load switch in **smartphones, tablets** and other portable devices to achieve fast switching of power, extend battery life and improve system energy efficiency.
3. **LED Drive Circuit**
In **LED lighting system**, MP6K11-VB can be used to control the brightness and switching of LEDs, improve the flexibility of the lighting system, and reduce power consumption.
4. **Automotive Electronic Systems**
The device can be used in **power windows, seat adjustment** and **light control** in automotive electrical systems to ensure efficient and stable power management and meet the high performance requirements of modern automobiles for electronic systems.
5. **Industrial Control and Automation**
MP6K11-VB is suitable for **motor drive and sensor control**, and can meet the needs of industrial equipment for high switching speed and low power consumption. It is an indispensable component in industrial automation.
With its excellent **current carrying capacity** and **low on-resistance**, MP6K11-VB has demonstrated excellent performance in a variety of applications, suitable for **power management, automotive electronics, LED drive** and **industrial control** and other fields, providing users with efficient solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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