Product introduction：
1. MMSF1310R2G-VB Product Introduction
MMSF1310R2G-VB is a high-efficiency **single-N-channel (Single-N-Channel) MOSFET**, using **SOP8 package**, designed for optimized power management and switching applications. Its **maximum drain-source voltage (VDS)** is 30V, which can provide reliable power control in medium and low voltage environments. The **gate-source voltage (VGS)** range of this device is ±20V, ensuring its stable operation in a wide voltage range. **The threshold voltage (Vth)** is 1.7V, which can be turned on quickly. At VGS = 4.5V and 10V, its on-resistance (RDS(ON)) is 11mΩ and 8mΩ respectively, which effectively reduces the conduction loss. The maximum drain current (ID) is 13A, which is suitable for application scenarios requiring high current capability and low power consumption.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
2. MMSF1310R2G-VB parameter description
| **Parameter** | **Description** | **Value** |
|--------------------------|------------------------------------|-------------------------------|
| **Model** | - | MMSF1310R2G-VB |
| **Package** | - | SOP8 |
| **Configuration** | - | Single N-channel|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 30V |
| **Gate-source voltage (VGS)** | Maximum withstand voltage| ±20V |
| **Threshold voltage (Vth)** | Minimum gate voltage when turned on| 1.7V |
| **On-resistance (RDS(ON))** | When VGS = 4.5V| 11mΩ |
| | When VGS = 10V| 8mΩ |
| **Drain Current (ID)** | Maximum Continuous Current| 13A |
| **Operating Technology** | - | Trench |
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Domain and module applications：
III. Application fields and modules of MMSF1310R2G-VB
1. **Power Management Modules**
MMSF1310R2G-VB is very suitable for **DC-DC converters** and **load switch circuits**. Its low on-resistance effectively reduces power loss and can improve energy efficiency and endurance in battery-powered devices.
2. **Motor drive and control**
In small motor control applications such as **fans, pumps and stepper motors**, the device can provide stable current drive capability to ensure smooth operation and fast response of the motor.
3. **LED Lighting and Drivers**
Due to the efficient current transmission capability of MMSF1310R2G-VB, it is suitable for **LED driver circuits** to help maintain the brightness consistency of LEDs and extend their service life.
4. **Portable Electronics**
In portable devices such as smartphones and tablets, this MOSFET is often used in **power switches** and **battery management** modules to optimize power distribution and extend the battery life of the device.
5. **Communication Equipment and Signal Control**
MMSF1310R2G-VB can also be used as a **switching element** in communication equipment to achieve signal routing and switching, supporting efficient signal transmission.
With its high current capability and low on-resistance, the MMSF1310R2G-VB is suitable for circuit applications that require high performance and compact design, and is an ideal choice in power management, signal switching, and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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