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MMFTN123-VB Product details
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MMFTN123-VB Product Introduction
**MMFTN123-VB** is a high-performance N-channel MOSFET in a SOT23-3 package, designed for low-power and high-efficiency switching applications. This MOSFET has a drain-source voltage (VDS) of up to 100V, making it suitable for use in high-voltage environments. Its threshold voltage (Vth) is 1.5V, allowing it to operate effectively at a lower gate drive voltage. Despite its high on-resistance (RDS(ON)) (3000mΩ @ VGS = 4.5V and 2800mΩ @ VGS = 10V), the MMFTN123-VB is still suitable for low-power applications, especially in high-frequency switching and power management systems.
**MMFTN123-VB** is a high-performance N-channel MOSFET in a SOT23-3 package, designed for low-power and high-efficiency switching applications. This MOSFET has a drain-source voltage (VDS) of up to 100V, making it suitable for use in high-voltage environments. Its threshold voltage (Vth) is 1.5V, allowing it to operate effectively at a lower gate drive voltage. Despite its high on-resistance (RDS(ON)) (3000mΩ @ VGS = 4.5V and 2800mΩ @ VGS = 10V), the MMFTN123-VB is still suitable for low-power applications, especially in high-frequency switching and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
MMFTN123-VB Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- 3000 mΩ @ VGS = 4.5V
- 2800 mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 0.26A
- **Technology type**: Trench
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- 3000 mΩ @ VGS = 4.5V
- 2800 mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 0.26A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
1. **Low-power Power Management**: The MMFTN123-VB is suitable for low-power power management modules such as DC-DC converters and regulators. Its high withstand voltage and low on-resistance enable it to effectively manage power and improve the energy efficiency of the system.
2. **Switching Power Supply**: In switching power supply applications, this MOSFET can be used for power switching and can operate at a higher frequency, thereby reducing switching losses and improving overall system performance.
3. **LED Drive Circuit**: This MOSFET can be used in LED drive circuits to accurately control the current flowing through the LED for better brightness and energy efficiency control.
4. **Portable Devices**: The MMFTN123-VB is suitable for a variety of portable electronic devices such as smartphones, tablets, and small battery-powered devices, providing efficient power switching and management solutions.
5. **Automotive Electronics**: This MOSFET can be used in automotive electronic control systems such as power window control, motor drive and other low-power switching applications to ensure efficient and reliable current control.
Through its excellent performance and wide range of application scenarios, MMFTN123-VB has become an important part of modern low-power power management solutions.
1. **Low-power Power Management**: The MMFTN123-VB is suitable for low-power power management modules such as DC-DC converters and regulators. Its high withstand voltage and low on-resistance enable it to effectively manage power and improve the energy efficiency of the system.
2. **Switching Power Supply**: In switching power supply applications, this MOSFET can be used for power switching and can operate at a higher frequency, thereby reducing switching losses and improving overall system performance.
3. **LED Drive Circuit**: This MOSFET can be used in LED drive circuits to accurately control the current flowing through the LED for better brightness and energy efficiency control.
4. **Portable Devices**: The MMFTN123-VB is suitable for a variety of portable electronic devices such as smartphones, tablets, and small battery-powered devices, providing efficient power switching and management solutions.
5. **Automotive Electronics**: This MOSFET can be used in automotive electronic control systems such as power window control, motor drive and other low-power switching applications to ensure efficient and reliable current control.
Through its excellent performance and wide range of application scenarios, MMFTN123-VB has become an important part of modern low-power power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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