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MMFT960T1G-VB Product details
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1. MMFT960T1G-VB Product Introduction
MMFT960T1G-VB is a **SOT223 packaged single N-channel MOSFET**, designed with **Trench technology**, designed for high-performance and low-power applications. The device has excellent conductivity and low on-resistance, making it very suitable for use in various power management and switching applications. Its main features include:
- **Rated drain-source voltage (VDS): ** 60V, suitable for medium voltage circuit applications
- **Gate-source voltage range (VGS): ** ±20V, providing flexible driving conditions
- **Throw-on voltage (Vth): ** 1.7V, suitable for low voltage drive applications
- **On-resistance (RDS(ON)): ** 85mΩ @ VGS = 4.5V and 76mΩ @ VGS = 10V, ensuring high efficiency and low power consumption
- **Maximum drain current (ID): ** 4.5A, suitable for medium load applications
The MMFT960T1G-VB is ideal for high-efficiency switching applications, providing design engineers with reliable solutions, especially in the fields of consumer electronics and power management.
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MMFT960T1G-VB is a **SOT223 packaged single N-channel MOSFET**, designed with **Trench technology**, designed for high-performance and low-power applications. The device has excellent conductivity and low on-resistance, making it very suitable for use in various power management and switching applications. Its main features include:
- **Rated drain-source voltage (VDS): ** 60V, suitable for medium voltage circuit applications
- **Gate-source voltage range (VGS): ** ±20V, providing flexible driving conditions
- **Throw-on voltage (Vth): ** 1.7V, suitable for low voltage drive applications
- **On-resistance (RDS(ON)): ** 85mΩ @ VGS = 4.5V and 76mΩ @ VGS = 10V, ensuring high efficiency and low power consumption
- **Maximum drain current (ID): ** 4.5A, suitable for medium load applications
The MMFT960T1G-VB is ideal for high-efficiency switching applications, providing design engineers with reliable solutions, especially in the fields of consumer electronics and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. MMFT960T1G-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-----------------------------------------|
| **Package type** | SOT223 | Small package, suitable for applications with limited space|
| **Configuration** | Single N-Channel | Single N-channel design, suitable for a variety of applications|
| **VDS** | 60V | Maximum rating of drain-source voltage|
| **VGS (absolute value)** | ±20V | Tolerance range of gate-source voltage|
| **Vth** | 1.7V | Gate turn-on voltage, suitable for low drive voltage applications|
| **RDS(ON)** | 85mΩ @ VGS = 4.5V; 76mΩ @ VGS = 10V | On-resistance, reflecting the power loss level|
| **ID** | 4.5A | Maximum continuous drain current capability|
| **Technology** | Trench | Using Trench technology to reduce conduction loss and improve efficiency|
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| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-----------------------------------------|
| **Package type** | SOT223 | Small package, suitable for applications with limited space|
| **Configuration** | Single N-Channel | Single N-channel design, suitable for a variety of applications|
| **VDS** | 60V | Maximum rating of drain-source voltage|
| **VGS (absolute value)** | ±20V | Tolerance range of gate-source voltage|
| **Vth** | 1.7V | Gate turn-on voltage, suitable for low drive voltage applications|
| **RDS(ON)** | 85mΩ @ VGS = 4.5V; 76mΩ @ VGS = 10V | On-resistance, reflecting the power loss level|
| **ID** | 4.5A | Maximum continuous drain current capability|
| **Technology** | Trench | Using Trench technology to reduce conduction loss and improve efficiency|
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Domain and module applications：
III. Application fields and module examples
1. **Power management system**
The **low on-resistance** and **high current capability** of the MMFT960T1G-VB make it very suitable for **switching power supplies** (SMPS) and **DC-DC converters** as an efficient switching element to achieve high-efficiency power management and voltage conversion.
2. **Consumer electronics**
In consumer electronics such as **smartphones, tablets** and **wearable devices**, this MOSFET can be used as a **power switch** to help optimize power efficiency and reduce power consumption, thereby extending battery life.
3. **Power tools**
This MOSFET is also suitable for **power tools**, where it can be used as a **motor drive switch** to achieve motor control and regulation, ensuring high efficiency and long-term operation of the equipment, especially for high-load applications.
4. **LED drive circuit**
MMFT960T1G-VB is suitable for **LED drive circuit** and can be used as **brightness adjustment switch** to help achieve efficient control and energy management of LED lighting and improve the overall performance of the lighting system.
In summary, the excellent performance and wide application fields of MMFT960T1G-VB make it an indispensable choice in the field of efficient power management and electronic control.
1. **Power management system**
The **low on-resistance** and **high current capability** of the MMFT960T1G-VB make it very suitable for **switching power supplies** (SMPS) and **DC-DC converters** as an efficient switching element to achieve high-efficiency power management and voltage conversion.
2. **Consumer electronics**
In consumer electronics such as **smartphones, tablets** and **wearable devices**, this MOSFET can be used as a **power switch** to help optimize power efficiency and reduce power consumption, thereby extending battery life.
3. **Power tools**
This MOSFET is also suitable for **power tools**, where it can be used as a **motor drive switch** to achieve motor control and regulation, ensuring high efficiency and long-term operation of the equipment, especially for high-load applications.
4. **LED drive circuit**
MMFT960T1G-VB is suitable for **LED drive circuit** and can be used as **brightness adjustment switch** to help achieve efficient control and energy management of LED lighting and improve the overall performance of the lighting system.
In summary, the excellent performance and wide application fields of MMFT960T1G-VB make it an indispensable choice in the field of efficient power management and electronic control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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