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MMD50R380P-VB Product details
Back to previous pageProduct introduction：
1. MMD50R380P-VB Product Introduction: MMD50R380P-VB is a single N-channel MOSFET in a TO252 package, using SJ_Multi-EPI technology, designed for high voltage applications. The device has excellent conductivity and low on-resistance, suitable for working in high voltage environments. Its main features include:
- **Rated drain-source voltage (VDS): ** 650V, suitable for high-voltage circuit applications
- **Gate-source voltage range (VGS): ** ±30V, providing flexibility for a variety of driving conditions
- **Throw-in voltage (Vth): ** 3.5V, suitable for standard driving voltage
- **On-resistance (RDS(ON)): ** 370mΩ @ VGS = 10V, ensuring low power consumption and high efficiency
- **Maximum drain current (ID): ** 11A, suitable for medium load applications
The MMD50R380P-VB is suitable for a variety of power management and high-voltage switching applications, providing design engineers with a reliable solution, especially in the fields of power electronics and automotive electronics.
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- **Rated drain-source voltage (VDS): ** 650V, suitable for high-voltage circuit applications
- **Gate-source voltage range (VGS): ** ±30V, providing flexibility for a variety of driving conditions
- **Throw-in voltage (Vth): ** 3.5V, suitable for standard driving voltage
- **On-resistance (RDS(ON)): ** 370mΩ @ VGS = 10V, ensuring low power consumption and high efficiency
- **Maximum drain current (ID): ** 11A, suitable for medium load applications
The MMD50R380P-VB is suitable for a variety of power management and high-voltage switching applications, providing design engineers with a reliable solution, especially in the fields of power electronics and automotive electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of MMD50R380P-VB
| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-----------------------------------------|
| **Package type** | TO252 | Package design is suitable for applications with limited space|
| **Configuration** | Single N-Channel | Single N-channel design, suitable for high-voltage switching applications|
| **VDS** | 650V | Maximum rating of drain-source voltage|
| **VGS (absolute value)** | ±30V | Tolerance range of gate-source voltage|
| **Vth** | 3.5V | Gate turn-on voltage|
| **RDS(ON)** | 370mΩ @ VGS = 10V | On-resistance, reflecting the power loss level|
| **ID** | 11A | Maximum continuous drain current capability|
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology to improve conductivity and withstand voltage |
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| **Parameter** | **Value** | **Description** |
|-------------------|-----------------------------|-----------------------------------------|
| **Package type** | TO252 | Package design is suitable for applications with limited space|
| **Configuration** | Single N-Channel | Single N-channel design, suitable for high-voltage switching applications|
| **VDS** | 650V | Maximum rating of drain-source voltage|
| **VGS (absolute value)** | ±30V | Tolerance range of gate-source voltage|
| **Vth** | 3.5V | Gate turn-on voltage|
| **RDS(ON)** | 370mΩ @ VGS = 10V | On-resistance, reflecting the power loss level|
| **ID** | 11A | Maximum continuous drain current capability|
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology to improve conductivity and withstand voltage |
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Domain and module applications：
3. Application fields and module examples
1. **Power supply and converter**
The **high voltage characteristics** and **low on-resistance** of MMD50R380P-VB make it very suitable for **switching power supply** (SMPS) and **DC-DC converter**. In these applications, this MOSFET can be used as an efficient switching element to help improve overall energy efficiency and reduce power consumption.
2. **Motor drive**
In **motor control systems**, MMD50R380P-VB can be used as a **motor drive switch** to achieve motor reversal control and speed regulation. Its high voltage tolerance and large drain current carrying capacity make it suitable for high-power motor applications.
3. **Automotive electronics**
This MOSFET is also widely used in **automotive power management systems**. It can be used in **battery management systems (BMS)**, **start/stop systems** and **electric vehicle drive controllers** to provide high efficiency and reliability, ensuring system stability and safety.
4. **Industrial Control**
In **industrial automation equipment**, the MMD50R380P-VB can be used as a **load switch and relay replacement** to help achieve efficient power control and management. Its high voltage resistance and stable performance make it suitable for a variety of harsh working environments.
The excellent performance and wide application fields of the MMD50R380P-VB make it an indispensable choice in high-voltage switch and power management solutions.
1. **Power supply and converter**
The **high voltage characteristics** and **low on-resistance** of MMD50R380P-VB make it very suitable for **switching power supply** (SMPS) and **DC-DC converter**. In these applications, this MOSFET can be used as an efficient switching element to help improve overall energy efficiency and reduce power consumption.
2. **Motor drive**
In **motor control systems**, MMD50R380P-VB can be used as a **motor drive switch** to achieve motor reversal control and speed regulation. Its high voltage tolerance and large drain current carrying capacity make it suitable for high-power motor applications.
3. **Automotive electronics**
This MOSFET is also widely used in **automotive power management systems**. It can be used in **battery management systems (BMS)**, **start/stop systems** and **electric vehicle drive controllers** to provide high efficiency and reliability, ensuring system stability and safety.
4. **Industrial Control**
In **industrial automation equipment**, the MMD50R380P-VB can be used as a **load switch and relay replacement** to help achieve efficient power control and management. Its high voltage resistance and stable performance make it suitable for a variety of harsh working environments.
The excellent performance and wide application fields of the MMD50R380P-VB make it an indispensable choice in high-voltage switch and power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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