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MLD2N06CLT4G-VB Product details
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MLD2N06CLT4G-VB Product Introduction
**MLD2N06CLT4G-VB** is a high-performance N-channel MOSFET in a TO252 package, designed for a variety of power management and switching applications. Its excellent RDS(ON) value ensures low conduction losses at high efficiency, making it suitable for a wide range of electrical and electronic equipment. This MOSFET supports drain-source voltages up to 60V and has an extremely low threshold voltage (Vth), making it excellent under low-voltage drive conditions, making it particularly suitable for modern high-efficiency power supply designs.
**MLD2N06CLT4G-VB** is a high-performance N-channel MOSFET in a TO252 package, designed for a variety of power management and switching applications. Its excellent RDS(ON) value ensures low conduction losses at high efficiency, making it suitable for a wide range of electrical and electronic equipment. This MOSFET supports drain-source voltages up to 60V and has an extremely low threshold voltage (Vth), making it excellent under low-voltage drive conditions, making it particularly suitable for modern high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
MLD2N06CLT4G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85 mΩ @ VGS = 4.5V
- 73 mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 18A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85 mΩ @ VGS = 4.5V
- 73 mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 18A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **Power management module**: The MLD2N06CLT4G-VB is suitable for power supplies and DC-DC converters, where it can be used to improve conversion efficiency and reduce energy consumption. Its low RDS(ON) characteristics enable it to reduce heat loss in high current applications.
2. **Motor drive**: This MOSFET can be used in motor drive circuits, especially in brushless DC motors (BLDC) and stepper motor drivers. Its fast switching speed and high current handling capability make it an ideal choice.
3. **LED drive circuit**: In LED lighting applications, the MLD2N06CLT4G-VB can be used to control the current, thereby improving the efficiency and service life of the LED.
4. **Automotive electronics**: In automotive power management and control systems, the MLD2N06CLT4G-VB can meet the requirements for high efficiency and high reliability, and is suitable for battery management systems and electric vehicle chargers, etc.
5. **Consumer Electronics**: This MOSFET can be used in a variety of consumer electronic devices such as mobile phone chargers, tablets and laptops, ensuring high efficiency in power conversion and management.
Through its excellent performance and wide application adaptability, the MLD2N06CLT4G-VB becomes a key component of modern power management solutions.
1. **Power management module**: The MLD2N06CLT4G-VB is suitable for power supplies and DC-DC converters, where it can be used to improve conversion efficiency and reduce energy consumption. Its low RDS(ON) characteristics enable it to reduce heat loss in high current applications.
2. **Motor drive**: This MOSFET can be used in motor drive circuits, especially in brushless DC motors (BLDC) and stepper motor drivers. Its fast switching speed and high current handling capability make it an ideal choice.
3. **LED drive circuit**: In LED lighting applications, the MLD2N06CLT4G-VB can be used to control the current, thereby improving the efficiency and service life of the LED.
4. **Automotive electronics**: In automotive power management and control systems, the MLD2N06CLT4G-VB can meet the requirements for high efficiency and high reliability, and is suitable for battery management systems and electric vehicle chargers, etc.
5. **Consumer Electronics**: This MOSFET can be used in a variety of consumer electronic devices such as mobile phone chargers, tablets and laptops, ensuring high efficiency in power conversion and management.
Through its excellent performance and wide application adaptability, the MLD2N06CLT4G-VB becomes a key component of modern power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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