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MIS6601-VB Product details
Back to previous pageProduct introduction：
1. MIS6601-VB Product Introduction: MIS6601-VB is a dual P+P-channel MOSFET in a **SOT23-6 package**, based on the highly efficient **Trench technology**. The device has good on-resistance characteristics and fast switching capability, and can provide dual-channel control in a compact package, making it very suitable for space-constrained applications. Its main features include:
- **Low on-resistance (RDS(ON)):** 100mΩ @ VGS = 2.5V and 75mΩ @ VGS = 4.5V
- **Low turn-on voltage (Vth):** -0.6V
- **Rated drain-source voltage (VDS):** -20V
- **Gate-source voltage tolerance (VGS):** ±12V
- **Maximum drain current (ID):** -4A
This MOSFET is suitable for bidirectional load management in low-voltage control systems and can be applied to highly integrated and small-size modules such as smart devices and portable electronics.
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- **Low on-resistance (RDS(ON)):** 100mΩ @ VGS = 2.5V and 75mΩ @ VGS = 4.5V
- **Low turn-on voltage (Vth):** -0.6V
- **Rated drain-source voltage (VDS):** -20V
- **Gate-source voltage tolerance (VGS):** ±12V
- **Maximum drain current (ID):** -4A
This MOSFET is suitable for bidirectional load management in low-voltage control systems and can be applied to highly integrated and small-size modules such as smart devices and portable electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
II. Detailed parameter description of MIS6601-VB
| **Parameter** | **Value** | **Description** |
|-------------------|------------------------------|-----------------------------------------|
| **Package type** | SOT23-6 | Miniaturized package, suitable for space-constrained applications|
| **Configuration** | Dual P+P-Channel | Dual P-channel design, supporting dual-channel load management|
| **VDS** | -20V | Maximum rating of drain-source voltage|
| **VGS (absolute value)** | ±12V | Tolerance range of gate-source voltage|
| **Vth** | -0.6V | Gate turn-on voltage, suitable for low drive voltage applications|
| **RDS(ON)** | 100mΩ @ VGS = 2.5V; 75mΩ @ VGS = 4.5V | On-resistance, reflecting the power loss level|
| **ID** | -4A | Maximum continuous drain current capability|
| **Technology** | Trench | Using Trench technology to reduce conduction loss|
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| **Parameter** | **Value** | **Description** |
|-------------------|------------------------------|-----------------------------------------|
| **Package type** | SOT23-6 | Miniaturized package, suitable for space-constrained applications|
| **Configuration** | Dual P+P-Channel | Dual P-channel design, supporting dual-channel load management|
| **VDS** | -20V | Maximum rating of drain-source voltage|
| **VGS (absolute value)** | ±12V | Tolerance range of gate-source voltage|
| **Vth** | -0.6V | Gate turn-on voltage, suitable for low drive voltage applications|
| **RDS(ON)** | 100mΩ @ VGS = 2.5V; 75mΩ @ VGS = 4.5V | On-resistance, reflecting the power loss level|
| **ID** | -4A | Maximum continuous drain current capability|
| **Technology** | Trench | Using Trench technology to reduce conduction loss|
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Domain and module applications：
III. Application fields and module examples
1. **Portable electronic devices**
Due to its **low on-resistance** and **compact package**, MIS6601-VB can be used as **power management and battery switching switch** in low-power devices such as smart watches and Bluetooth headsets to achieve efficient power control.
2. **Motor drive and load switch module**
In small motor drive modules, the **dual-channel design** of this MOSFET enables **bidirectional load control** for reverse drive or bidirectional regulation, suitable for smart home devices and micro pump control.
3. **Power rail switching and protection circuit**
MIS6601-VB acts as a **power rail switching switch** in the power management unit (PMU) to selectively distribute power to different modules. Its **low gate drive voltage** gives it excellent compatibility in low-voltage power supply systems.
4. **Battery Management System (BMS) in Consumer Electronics**
In consumer electronics, such as mobile phones and tablets, MIS6601-VB can be used as a **battery protection switch** to protect the battery from overcharge or overdischarge. Its low RDS(ON) characteristics help reduce energy loss and increase battery life.
The high performance and flexibility of MIS6601-VB make it have a wide range of application potential in modules that require low voltage control, bidirectional load management and compact size.
1. **Portable electronic devices**
Due to its **low on-resistance** and **compact package**, MIS6601-VB can be used as **power management and battery switching switch** in low-power devices such as smart watches and Bluetooth headsets to achieve efficient power control.
2. **Motor drive and load switch module**
In small motor drive modules, the **dual-channel design** of this MOSFET enables **bidirectional load control** for reverse drive or bidirectional regulation, suitable for smart home devices and micro pump control.
3. **Power rail switching and protection circuit**
MIS6601-VB acts as a **power rail switching switch** in the power management unit (PMU) to selectively distribute power to different modules. Its **low gate drive voltage** gives it excellent compatibility in low-voltage power supply systems.
4. **Battery Management System (BMS) in Consumer Electronics**
In consumer electronics, such as mobile phones and tablets, MIS6601-VB can be used as a **battery protection switch** to protect the battery from overcharge or overdischarge. Its low RDS(ON) characteristics help reduce energy loss and increase battery life.
The high performance and flexibility of MIS6601-VB make it have a wide range of application potential in modules that require low voltage control, bidirectional load management and compact size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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