MIS6423-VB Product details
Product introduction:
MIS6423-VB is a **single P-channel MOSFET**, which adopts **SOT23-6** package, has a compact design and is suitable for low-voltage control circuits. The drain-source voltage (**VDS**) of this MOSFET is -30V, and the gate-source voltage (**VGS**) is rated at ±20V. It has a low **on-resistance RDS(ON)**, which is only 49mΩ under 10V gate drive, and can provide **-4.8A** current capability. It adopts **Trench (trench type) technology**, has excellent switching performance and low conduction loss, and is suitable for battery management, load switching and high-efficiency control applications in low-voltage DC systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| **Parameter** | **Value** | **Description** |
|---------------------------|--------------------------|----------------------------------|
| **Package type** | SOT23-6 | Small package, suitable for compact circuit design|
| **Configuration** | Single P-channel | Controls the current flowing from the source to the drain of the load|
| **VDS (drain-source voltage)** | -30V | Maximum supported drain-source voltage|
| **VGS (gate-source voltage)** | ±20V | Maximum supported gate drive voltage range|
| **Vth (turn-on voltage)** | -1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 54mΩ | On-resistance at 4.5V gate drive|
| **RDS(ON)@VGS=10V** | 49mΩ | On-resistance at 10V gate drive|
| **ID(Drain Current)** | -4.8A | Maximum Drain Current|
| **Technology** | Trench Technology | Provides lower on-resistance and higher switching efficiency|
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Domain and module applications:
1. **Battery Management System (BMS)**
- In the lithium battery protection circuit, MIS6423-VB acts as a load switch to control the battery charge and discharge path, and can quickly disconnect when the voltage is abnormal to ensure battery safety.
2. **Load switch and power management module**
- In the DC-DC converter or power path selection circuit, it is used to control the switching of multiple power supplies to achieve the advantages of low on-resistance and low power consumption.
3. **Smart home and IoT devices**
- Used in smart switches and low-power modules, the small package and efficient switching characteristics of MIS6423-VB make it suitable for battery-powered devices, such as smart locks, wireless sensor nodes, etc.
4. **Automotive electronic control module**
- Can be used for load control in low-voltage electric systems, such as electric windows or lighting modules, to ensure the stability and reliability of current control.
5. **Consumer Electronics**
- In the circuit design of mobile phones, tablets or smart wearable devices, MIS6423-VB can be used as a power control switch to improve the flexibility and efficiency of power management.
With its small package, low on-resistance and efficient switching capability, MIS6423-VB is very suitable for **applications that require compact design, low loss and flexible control**.
Technical support:
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