MIS6421-VB Product details
Product introduction:
**MIS6421-VB** is a single P-channel MOSFET in a small **SOT23-6** package, designed for applications requiring low on-resistance, high-efficiency power switching and high reliability. The device is manufactured based on **Trench (trench) technology** and has excellent RDS(ON) performance and fast switching capability. Its -1.7V Vth (threshold voltage) makes it ideal for low voltage applications, especially for load switching and power management in compact electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------------|--------------------------------------------------|
| **Package** | SOT23-6 | Small surface mount package for compact designs. |
| **Configuration** | Single P-channel | Controls current flow from source to drain at negative gate voltage. |
| **VDS (Drain-Source Voltage)** | -30V | Maximum voltage between drain and source, exceeding this value may cause breakdown. |
| **VGS (Gate-Source Voltage)** | ±20V | Maximum gate-source voltage range that the device can withstand. |
| **Vth (Threshold Voltage)** | -1.7V | Gate threshold voltage at which the device begins to conduct. |
| **RDS(ON) @ VGS = 4.5V** | 54mΩ | On-resistance at 4.5V gate voltage. |
| **RDS(ON) @ VGS = 10V** | 49mΩ | On-resistance at 10V gate voltage, lower impedance improves efficiency. |
| **ID (Continuous Drain Current)**| -4.8A | Maximum current the device can carry continuously. |
| **Technology** | Trench | Provides high current density and low RDS(ON) for efficient switching. |
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Domain and module applications:
1. **Consumer Electronics**
- **Battery Management System (BMS):** Due to its low RDS(ON), MIS6421-VB is ideal for load switches and battery protection circuits, helping to reduce conduction losses and extend battery life.
- **Portable Devices:** This MOSFET is commonly used in smartphones, tablets, and wearable devices for low-voltage power switches and battery disconnect circuits.
2. **Power Management Modules**
- **DC-DC Converters:** As a P-channel device, it simplifies the high-side switch in the buck converter for efficient power conversion, suitable for small modules with less heat generation.
- **Load Switch:** This device is an ideal load switch for efficient power distribution in computing and networking equipment.
3. **Automotive and Industrial Applications**
- **Electronic Control Unit (ECU) Module:** In automotive applications, it is used for power management of sensors and actuators within the control unit.
- **Power Distribution Module:** In industrial systems, it plays an important role in situations where compact, efficient and reliable load management is required.
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**MIS6421-VB** MOSFET is suitable for power management and load switching in modern electronic devices through the advantages of low impedance design, compact packaging and trench technology, and is widely used in consumer electronics, industrial and automotive fields.
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