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MIS6419-VB Product details

Product introduction:

1. MIS6419-VB Product Introduction
MIS6419-VB is a single P-channel MOSFET in a **SOT23-6** package, suitable for a variety of power management and load switching applications. The device can withstand a drain-source voltage (VDS) of **-30V** and supports a gate-source voltage (VGS) of ±20V. It has low on-resistance and good switching performance, making it very suitable for use in battery-driven devices and mobile devices. In addition, MIS6419-VB uses **Trench technology** to improve the device's conduction capability and reduce power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
II. Detailed parameter description of MIS6419-VB

| **Parameter** | **Description and value** |
|-----------------------|-------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Single P-channel MOSFET |
| **Drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 54mΩ @ VGS = 4.5V;49mΩ @ VGS = 10V |
| **Drain current (ID)** | -4.8A |
| **Technology** | Trench technology|
| **Operating temperature range** | -55°C to 150°C |
| **Power consumption** | Typical is a few hundred milliwatts, depending on thermal conditions |

The device's Trench technology not only reduces RDS(ON), but also provides good switching speed and stability, making it ideal for efficient power management.

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Domain and module applications:

III. MIS6419-VB Application Fields and Modules

1. **Battery Management System in Mobile Devices**
- Due to its low on-resistance and fast switching capability, MIS6419-VB can be used in **battery protection circuits** in mobile phones, tablets and other devices. It can be used as a load switch to reduce battery power consumption and prevent excessive discharge of the device when idle.

2. **High-side switch in DC-DC converter**
- In a **buck converter** or linear regulator, this MOSFET acts as a high-side switch to achieve low-power voltage conversion and improve power conversion efficiency.

3. **LED lighting control module**
- In smart lighting systems, MIS6419-VB can act as a switch component to accurately control the brightness of LEDs, avoid energy waste, and achieve efficient lighting control.

4. **Power control in IoT devices**
- In IoT sensors, wireless devices, or home automation modules, the device can be used for **load switching**, intelligent power distribution, and low-power standby.

5. **Electric toys and small motor control**
- Suitable for control circuits of toy cars or small fan motors, MIS6419-VB can reduce conduction losses, improve motor drive efficiency, and reduce device heat.

MIS6419-VB has **small size, high performance, and low power consumption**, making it ideal for use in **space-constrained applications that require high efficiency**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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