MIS6419-VB Product details
Product introduction:
MIS6419-VB is a single P-channel MOSFET in a **SOT23-6** package, suitable for a variety of power management and load switching applications. The device can withstand a drain-source voltage (VDS) of **-30V** and supports a gate-source voltage (VGS) of ±20V. It has low on-resistance and good switching performance, making it very suitable for use in battery-driven devices and mobile devices. In addition, MIS6419-VB uses **Trench technology** to improve the device's conduction capability and reduce power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| **Parameter** | **Description and value** |
|-----------------------|-------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Single P-channel MOSFET |
| **Drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 54mΩ @ VGS = 4.5V;49mΩ @ VGS = 10V |
| **Drain current (ID)** | -4.8A |
| **Technology** | Trench technology|
| **Operating temperature range** | -55°C to 150°C |
| **Power consumption** | Typical is a few hundred milliwatts, depending on thermal conditions |
The device's Trench technology not only reduces RDS(ON), but also provides good switching speed and stability, making it ideal for efficient power management.
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Domain and module applications:
1. **Battery Management System in Mobile Devices**
- Due to its low on-resistance and fast switching capability, MIS6419-VB can be used in **battery protection circuits** in mobile phones, tablets and other devices. It can be used as a load switch to reduce battery power consumption and prevent excessive discharge of the device when idle.
2. **High-side switch in DC-DC converter**
- In a **buck converter** or linear regulator, this MOSFET acts as a high-side switch to achieve low-power voltage conversion and improve power conversion efficiency.
3. **LED lighting control module**
- In smart lighting systems, MIS6419-VB can act as a switch component to accurately control the brightness of LEDs, avoid energy waste, and achieve efficient lighting control.
4. **Power control in IoT devices**
- In IoT sensors, wireless devices, or home automation modules, the device can be used for **load switching**, intelligent power distribution, and low-power standby.
5. **Electric toys and small motor control**
- Suitable for control circuits of toy cars or small fan motors, MIS6419-VB can reduce conduction losses, improve motor drive efficiency, and reduce device heat.
MIS6419-VB has **small size, high performance, and low power consumption**, making it ideal for use in **space-constrained applications that require high efficiency**.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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