MIS6409-VB Product details
Product introduction:
MIS6409-VB is a **Single-P-Channel) MOSFET**, which adopts a small size SOT23-6 package, which is very suitable for applications with strict space requirements. It has **30V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)** capabilities, which can meet the switching requirements in low-voltage systems. Its **on-resistance (RDS(ON))** is as low as 49mΩ, and it performs excellently under 4.5V and 10V gate drive. MIS6409-VB adopts **Trench (trench type) technology**, which ensures low conduction loss and efficient current handling capability, and is suitable for applications in battery-powered equipment and fast response systems.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|----------------------------------------|
| **Package** | SOT23-6 | Small 6-pin package, saving PCB board space|
| **Channel Type** | Single-P-Channel | Suitable for load disconnect or power switch applications|
| **Drain-Source Voltage (VDS)** | -30V | Maximum supported drain-source voltage|
| **Gate-Source Voltage (VGS)** | ±20V | Supported gate drive voltage range|
| **Turning Voltage (Vth)** | -1.7V | Gate Turn-On Voltage|
| **On-Resistance (RDS(ON))** | 54mΩ @ VGS = 4.5V
49mΩ @ VGS = 10V | On-resistance at different gate drives|
| **Maximum drain current (ID)** | -4.8A | Maximum continuous current supported|
| **Technology** | Trench | Reduce on-resistance and improve device efficiency|
---
Domain and module applications:
MIS6409-VB MOSFET is suitable for a variety of fields and module applications due to its small package and high performance:
1. **Battery-powered devices**
- Suitable for battery-powered products such as mobile phones and wearable devices. Its low RDS(ON) makes current transmission more efficient, thereby extending battery life.
2. **Power management modules (PMICs)**
- In portable devices and power conversion modules, MIS6409-VB can be used as a **load switch** to ensure efficient disconnection and connection of the power supply part.
3. **DC-DC converter**
- In a buck or boost converter, it can be used as a switching element to improve power conversion efficiency and meet the power supply needs of a variety of consumer electronic products.
4. **Power tools and motor drives**
- Suitable for control systems that need to disconnect the power supply, such as small motors and drive modules.
5. **Smart Home Products**
- In smart sockets, smart bulbs and other household products, MIS6409-VB can provide fast power-off and over-current protection functions to ensure the safe operation of the equipment.
The excellent electrical performance and compact package of MIS6409-VB make it an ideal choice for **consumer electronics, portable devices and smart power management**.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image