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MIS6402-VB Product details
Back to previous pageProduct introduction：
1. MIS6402-VB MOSFET Product Introduction
MIS6402-VB is a **dual N+N-channel** MOSFET in a **SOT23-6 package**, supporting low-voltage, high-efficiency applications. It has a low **turn-on voltage (Vth)** range (0.5~1.5V) and excellent on-resistance (RDS(ON)) performance at different gate drive voltages (2.5V, 4.5V). This device is manufactured using **trench technology** to ensure excellent conduction performance and power efficiency in high-current applications. Its main features make it very suitable for **battery-driven equipment** and **load switch** applications.
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MIS6402-VB is a **dual N+N-channel** MOSFET in a **SOT23-6 package**, supporting low-voltage, high-efficiency applications. It has a low **turn-on voltage (Vth)** range (0.5~1.5V) and excellent on-resistance (RDS(ON)) performance at different gate drive voltages (2.5V, 4.5V). This device is manufactured using **trench technology** to ensure excellent conduction performance and power efficiency in high-current applications. Its main features make it very suitable for **battery-driven equipment** and **load switch** applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
II. MIS6402-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------------------|-------------------------------------------|
| **Package Type** | SOT23-6 | Small package, suitable for high-density PCB design|
| **Configuration** | Dual N+N-channel | Two independent N-channel MOSFETs integrated on the same chip|
| **Drain-Source Voltage (VDS)** | 20V | Maximum Withstandable Drain-Source Voltage|
| **Gate-Source Voltage (VGS)** | ±12V | Maximum Gate Drive Voltage Range|
| **Turning Voltage (Vth)** | 0.5~1.5V | Voltage range for MOSFET to turn on from off state|
| **On-resistance (RDS(ON))** | 28mΩ @ VGS=2.5V | At 2.5V On-resistance at gate voltage|
| | 22mΩ @ VGS=4.5V | On-resistance at gate voltage of 4.5V|
| **Continuous drain current (ID)** | 6A | Maximum continuous current per channel|
| **Technology** | Trench | Trench structure, providing lower on-resistance and high current capability|
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| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------------------|-------------------------------------------|
| **Package Type** | SOT23-6 | Small package, suitable for high-density PCB design|
| **Configuration** | Dual N+N-channel | Two independent N-channel MOSFETs integrated on the same chip|
| **Drain-Source Voltage (VDS)** | 20V | Maximum Withstandable Drain-Source Voltage|
| **Gate-Source Voltage (VGS)** | ±12V | Maximum Gate Drive Voltage Range|
| **Turning Voltage (Vth)** | 0.5~1.5V | Voltage range for MOSFET to turn on from off state|
| **On-resistance (RDS(ON))** | 28mΩ @ VGS=2.5V | At 2.5V On-resistance at gate voltage|
| | 22mΩ @ VGS=4.5V | On-resistance at gate voltage of 4.5V|
| **Continuous drain current (ID)** | 6A | Maximum continuous current per channel|
| **Technology** | Trench | Trench structure, providing lower on-resistance and high current capability|
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Domain and module applications：
III. Application fields and module examples of MIS6402-VB
1. **Battery-powered devices**
- In battery-powered applications such as smartphones, tablets, and wearable devices, the low turn-on voltage and low on-resistance of this MOSFET are very suitable for use as a **power switch**, reducing battery consumption and extending device life.
- For example, MIS6402-VB can be used as a load switch in lithium battery management circuits to effectively reduce leakage current in standby mode.
2. **Load switch and power distribution module**
- This MOSFET can be used in **DC-DC converters** and power distribution modules to provide efficient load switching. Its dual N+N-channel configuration allows the integration of multi-way switching functions in a compact space, increasing the flexibility of circuit design.
- Applied to computer motherboards, hard disk power management, or power control of communication equipment.
3. **Consumer Electronics**
- MIS6402-VB is suitable for consumer electronics such as home appliances, smart LED lights and portable audio systems, ensuring efficient switch control and fast response in the circuit.
- Its trench technology supports stable performance in high-current applications, which helps the long-term reliable operation of the equipment.
4. **Automotive Electronics**
- In the **In-Car Entertainment System**, USB Charging Module or **Door Control Module** in the car, MIS6402-VB can be used as a switching element to ensure fast response and low power consumption of the module.
- The small package size of SOT23-6 makes it particularly suitable for in-vehicle circuit design that needs to save space.
The comprehensive performance and packaging characteristics of MIS6402-VB make it an ideal choice for low-voltage load switches, battery management systems and various consumer and industrial equipment applications.
1. **Battery-powered devices**
- In battery-powered applications such as smartphones, tablets, and wearable devices, the low turn-on voltage and low on-resistance of this MOSFET are very suitable for use as a **power switch**, reducing battery consumption and extending device life.
- For example, MIS6402-VB can be used as a load switch in lithium battery management circuits to effectively reduce leakage current in standby mode.
2. **Load switch and power distribution module**
- This MOSFET can be used in **DC-DC converters** and power distribution modules to provide efficient load switching. Its dual N+N-channel configuration allows the integration of multi-way switching functions in a compact space, increasing the flexibility of circuit design.
- Applied to computer motherboards, hard disk power management, or power control of communication equipment.
3. **Consumer Electronics**
- MIS6402-VB is suitable for consumer electronics such as home appliances, smart LED lights and portable audio systems, ensuring efficient switch control and fast response in the circuit.
- Its trench technology supports stable performance in high-current applications, which helps the long-term reliable operation of the equipment.
4. **Automotive Electronics**
- In the **In-Car Entertainment System**, USB Charging Module or **Door Control Module** in the car, MIS6402-VB can be used as a switching element to ensure fast response and low power consumption of the module.
- The small package size of SOT23-6 makes it particularly suitable for in-vehicle circuit design that needs to save space.
The comprehensive performance and packaging characteristics of MIS6402-VB make it an ideal choice for low-voltage load switches, battery management systems and various consumer and industrial equipment applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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