MIS6401-VB Product details
Product introduction:
MIS6401-VB is a dual P+P-channel MOSFET in SOT23-6 package, suitable for power management and switching applications in compact designs. It has a drain-source voltage (VDS) of **-20V** and a gate-source voltage (VGS) of **±12V**, suitable for low-voltage DC switching scenarios. The device is based on **Trench technology**, providing low on-resistance (RDS(ON)) characteristics, effectively reducing power consumption, and is suitable for applications requiring fast switching and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|----------|
| **Package type** | SOT23-6 | Small package, suitable for compact design|
| **Configuration** | Dual-P + P-Channel | Dual P-channel MOSFET, supporting bidirectional control or multi-channel switching|
| **VDS (drain-source voltage)** | -20V | Maximum tolerable drain-source voltage|
| **VGS (gate-source voltage)** | ±12V | Maximum allowable gate voltage|
| **Vth (threshold voltage)** | -0.6V | Minimum gate voltage to turn on MOSFET|
| **RDS(ON)@VGS=2.5V** | 100mΩ | On-resistance (at 2.5V) |
| **RDS(ON)@VGS=4.5V** | 75mΩ | On-resistance (at 4.5V) |
| **ID (Drain Current)** | -4A | Maximum continuous drain current|
| **Technology** | Trench | Advanced trench technology for low resistance and efficient switching|
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Domain and module applications:
1. **Portable electronic devices**
- **Application examples**: Power management modules for smart watches, wireless headphones, and portable speakers
- **Advantages**: The SOT23-6 package saves space and supports dual-channel management, which can reduce standby power consumption and extend device battery life.
2. **Load switches and battery protection circuits**
- **Application examples**: Charge and discharge control in mobile power supplies and lithium battery management systems
- **Advantages**: The low on-resistance of Trench technology reduces power loss and can safely handle reverse voltages within -20V.
3. **Motor drive and control**
- **Application examples**: Low-voltage drive modules for small DC motors or fans
- **Advantages**: Supports -4A current, suitable for controlling small power motors, and provides fast-response dual P-channel switching.
4. **Signal switching and analog switch**
- **Application example**: Signal control circuit for communication modules and sensor systems
- **Advantage**: The dual P+P channel configuration of the device can flexibly realize bidirectional signal path switching.
With its compact package and high performance, MIS6401-VB is widely used in various portable devices, power management modules, and communication and control systems.
Technical support:
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