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MIS6201-VB Product details
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1. MIS6201-VB MOSFET Product Introduction
**MIS6201-VB** is a **single P-type MOSFET**, using **SOT23-6 package**, designed for power management and load switching applications in miniaturized electronic devices. The device supports **-30V drain-source voltage (V_DS)**, has a low on-resistance (**R_DS(ON) is 54mΩ @ V_GS = 4.5V** and **49mΩ @ V_GS = 10V**), and can provide **-4.8A continuous drain current (I_D)**. Based on **Trench technology**, MIS6201-VB has excellent switching performance and can achieve efficient current management in a limited space, which is very suitable for portable devices, battery-powered systems and other low-voltage power modules.
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**MIS6201-VB** is a **single P-type MOSFET**, using **SOT23-6 package**, designed for power management and load switching applications in miniaturized electronic devices. The device supports **-30V drain-source voltage (V_DS)**, has a low on-resistance (**R_DS(ON) is 54mΩ @ V_GS = 4.5V** and **49mΩ @ V_GS = 10V**), and can provide **-4.8A continuous drain current (I_D)**. Based on **Trench technology**, MIS6201-VB has excellent switching performance and can achieve efficient current management in a limited space, which is very suitable for portable devices, battery-powered systems and other low-voltage power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. MIS6201-VB MOSFET Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------------|-------------------------------------------------|
| **Package Type** | SOT23-6 | Small package, suitable for compact design modules|
| **Polarity** | Single P-channel (Single-P) | The device is a single P-type MOSFET |
| **Drain-Source Voltage (V_DS)** | -30V | Supports a maximum operating voltage of -30V|
| **Gate-Source Voltage (V_GS)** | ±20V | Maximum Withstand Gate Drive Voltage Range|
| **Threshold Voltage (V_th)** | -1.7V | Start-up voltage, supports logic level drive|
| **On-resistance (R_DS(ON))** | 54mΩ @ V_GS = 4.5V; 49mΩ @ V_GS = 10V | On-state resistance value, ensuring low losses|
| **Continuous drain current (I_D)** | -4.8A | Maximum current supported with proper heat dissipation|
| **Technology** | Trench | Trench technology, providing lower on-resistance and excellent efficiency|
| **Operating temperature range** | -55°C to +150°C | Suitable for a variety of industrial and consumer electronic environments|
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------------|-------------------------------------------------|
| **Package Type** | SOT23-6 | Small package, suitable for compact design modules|
| **Polarity** | Single P-channel (Single-P) | The device is a single P-type MOSFET |
| **Drain-Source Voltage (V_DS)** | -30V | Supports a maximum operating voltage of -30V|
| **Gate-Source Voltage (V_GS)** | ±20V | Maximum Withstand Gate Drive Voltage Range|
| **Threshold Voltage (V_th)** | -1.7V | Start-up voltage, supports logic level drive|
| **On-resistance (R_DS(ON))** | 54mΩ @ V_GS = 4.5V; 49mΩ @ V_GS = 10V | On-state resistance value, ensuring low losses|
| **Continuous drain current (I_D)** | -4.8A | Maximum current supported with proper heat dissipation|
| **Technology** | Trench | Trench technology, providing lower on-resistance and excellent efficiency|
| **Operating temperature range** | -55°C to +150°C | Suitable for a variety of industrial and consumer electronic environments|
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Domain and module applications：
III. Application fields and module examples of MIS6201-VB
1. **Portable electronic devices**
- **Smartphones, tablets and wearable devices**: MIS6201-VB is used for load switches and battery protection modules to help manage the power path, improve device standby efficiency and reduce power consumption.
2. **Battery Management System (BMS)**
- In lithium battery packs, MIS6201-VB is used for **overcurrent protection** and power switching to ensure safe operation of batteries at different power states.
- Used as a switch for charging and discharging paths in **power banks and mobile power supplies** to improve system reliability and life.
3. **Consumer Electronics Power Modules**
- **Power adapters and chargers**: As a P-type MOSFET switch at the input end, it is used to control the power path and prevent reverse current.
- In **audio amplifiers**, it is used to control the current path to improve the energy efficiency and stability of audio equipment.
4. **Industrial Internet of Things (IoT) devices**
- In **IoT sensor nodes**, MIS6201-VB controls the battery power path to improve energy efficiency in standby mode.
- Used for power management and protection circuits in small industrial control systems.
5. **LED lighting control**
- **Adjustable LED driver**: MIS6201-VB is used for current control to achieve stable brightness output and reduce energy consumption.
**Summary**: With its small package, efficient switching performance and low on-resistance, the MIS6201-VB MOSFET is ideal for applications such as portable electronic devices, battery management systems, industrial IoT modules and LED lighting control. Its excellent power control capability makes it an ideal choice in low-voltage power management modules.
1. **Portable electronic devices**
- **Smartphones, tablets and wearable devices**: MIS6201-VB is used for load switches and battery protection modules to help manage the power path, improve device standby efficiency and reduce power consumption.
2. **Battery Management System (BMS)**
- In lithium battery packs, MIS6201-VB is used for **overcurrent protection** and power switching to ensure safe operation of batteries at different power states.
- Used as a switch for charging and discharging paths in **power banks and mobile power supplies** to improve system reliability and life.
3. **Consumer Electronics Power Modules**
- **Power adapters and chargers**: As a P-type MOSFET switch at the input end, it is used to control the power path and prevent reverse current.
- In **audio amplifiers**, it is used to control the current path to improve the energy efficiency and stability of audio equipment.
4. **Industrial Internet of Things (IoT) devices**
- In **IoT sensor nodes**, MIS6201-VB controls the battery power path to improve energy efficiency in standby mode.
- Used for power management and protection circuits in small industrial control systems.
5. **LED lighting control**
- **Adjustable LED driver**: MIS6201-VB is used for current control to achieve stable brightness output and reduce energy consumption.
**Summary**: With its small package, efficient switching performance and low on-resistance, the MIS6201-VB MOSFET is ideal for applications such as portable electronic devices, battery management systems, industrial IoT modules and LED lighting control. Its excellent power control capability makes it an ideal choice in low-voltage power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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