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MI3134-VB Product details
Back to previous pageProduct introduction：
1. MI3134-VB Product Introduction
MI3134-VB is a high-performance **single N-channel MOSFET**, which adopts **SOT89** package and is suitable for application scenarios that require compact size and good heat dissipation performance. The maximum drain-source voltage (VDS) of the device is **30V**, the supported gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is **1.7V**. At **VGS=2.5V**, its on-resistance (RDS(ON)) is **30mΩ**, and it is reduced to **22mΩ** at **VGS=4.5V**, which can support a maximum **6.8A** continuous drain current. Based on **Trench technology**, this MOSFET provides low on-resistance and fast switching capabilities, and is ideal for low-voltage, high-efficiency power management applications and drive circuits.
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MI3134-VB is a high-performance **single N-channel MOSFET**, which adopts **SOT89** package and is suitable for application scenarios that require compact size and good heat dissipation performance. The maximum drain-source voltage (VDS) of the device is **30V**, the supported gate-source voltage (VGS) range is ±20V, and the turn-on threshold voltage (Vth) is **1.7V**. At **VGS=2.5V**, its on-resistance (RDS(ON)) is **30mΩ**, and it is reduced to **22mΩ** at **VGS=4.5V**, which can support a maximum **6.8A** continuous drain current. Based on **Trench technology**, this MOSFET provides low on-resistance and fast switching capabilities, and is ideal for low-voltage, high-efficiency power management applications and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
II. MI3134-VB Detailed Parameter Description
| **Parameter Name** | **Value** | **Unit** | **Description** |
|---------------------|-------------------|-----------|-------------------------------------------|
| **Package Type** | SOT89 | - | Small package, suitable for compact design and good heat dissipation|
| **Channel Configuration** | Single N-channel| - | Single N-channel MOSFET |
| **Maximum Drain-Source Voltage (VDS)** | 30 | V | Maximum Tolerable Drain-Source Voltage|
| **Maximum Gate-Source Voltage (VGS)** | ±20 | V | Gate-Source Voltage Limit Range|
| **Threshold Voltage (Vth)** | 1.7 | V | Minimum Gate Voltage to Start Conducting|
| **On-Resistance (RDS(ON))** | 30 | mΩ | At VGS=2.5V |
| **On-resistance (RDS(ON))** | 22 | mΩ | On-resistance at VGS=4.5V|
| **Maximum continuous current (ID)** | 6.8 | A | Maximum continuous drain current, suitable for low power drive applications|
| **Technology type** | Trench | - | Trench technology, providing high efficiency and low conduction loss|
| **Operating temperature range** | -55 ~ 150 | ℃ | Wide operating temperature range, suitable for a variety of application environments|
| **Mounting method** | Surface mount| - | Suitable for automated production, improving design integration|
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| **Parameter Name** | **Value** | **Unit** | **Description** |
|---------------------|-------------------|-----------|-------------------------------------------|
| **Package Type** | SOT89 | - | Small package, suitable for compact design and good heat dissipation|
| **Channel Configuration** | Single N-channel| - | Single N-channel MOSFET |
| **Maximum Drain-Source Voltage (VDS)** | 30 | V | Maximum Tolerable Drain-Source Voltage|
| **Maximum Gate-Source Voltage (VGS)** | ±20 | V | Gate-Source Voltage Limit Range|
| **Threshold Voltage (Vth)** | 1.7 | V | Minimum Gate Voltage to Start Conducting|
| **On-Resistance (RDS(ON))** | 30 | mΩ | At VGS=2.5V |
| **On-resistance (RDS(ON))** | 22 | mΩ | On-resistance at VGS=4.5V|
| **Maximum continuous current (ID)** | 6.8 | A | Maximum continuous drain current, suitable for low power drive applications|
| **Technology type** | Trench | - | Trench technology, providing high efficiency and low conduction loss|
| **Operating temperature range** | -55 ~ 150 | ℃ | Wide operating temperature range, suitable for a variety of application environments|
| **Mounting method** | Surface mount| - | Suitable for automated production, improving design integration|
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Domain and module applications：
III. Application fields and module examples
1. **Low-power DC-DC converter**
MI3134-VB is suitable for **low-power DC-DC converter**, especially for portable devices that require compact circuit design, such as Bluetooth speakers, smart watches and wireless headphones, to provide high-efficiency power management.
2. **Battery-powered devices**
In **battery-powered devices**, the low on-resistance of this MOSFET can reduce losses and extend battery life, making it very suitable for mobile devices and Internet of Things (IoT) terminals.
3. **Motor drive and load switch**
MI3134-VB can be used to drive **small motors**, such as focus motors for camera modules and micro robot motors, and can also be used as a low-voltage load switch to achieve load control in smart homes.
4. **LED driver module**
This device is also suitable for **LED driver module**, supporting stable switching in low-voltage environments, and is widely used in power management of lighting equipment and decorative light strips.
5. **Industrial control system**
In **industrial control systems**, MI3134-VB can be used for sensor power supply and module control to ensure stable operation of the system in harsh environments.
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The small package size of MI3134-VB combined with Trench technology makes it an ideal choice for portable devices and compact circuit designs. Its low on-resistance and high current capability ensure excellent energy efficiency and are suitable for a variety of power management and drive applications.
1. **Low-power DC-DC converter**
MI3134-VB is suitable for **low-power DC-DC converter**, especially for portable devices that require compact circuit design, such as Bluetooth speakers, smart watches and wireless headphones, to provide high-efficiency power management.
2. **Battery-powered devices**
In **battery-powered devices**, the low on-resistance of this MOSFET can reduce losses and extend battery life, making it very suitable for mobile devices and Internet of Things (IoT) terminals.
3. **Motor drive and load switch**
MI3134-VB can be used to drive **small motors**, such as focus motors for camera modules and micro robot motors, and can also be used as a low-voltage load switch to achieve load control in smart homes.
4. **LED driver module**
This device is also suitable for **LED driver module**, supporting stable switching in low-voltage environments, and is widely used in power management of lighting equipment and decorative light strips.
5. **Industrial control system**
In **industrial control systems**, MI3134-VB can be used for sensor power supply and module control to ensure stable operation of the system in harsh environments.
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The small package size of MI3134-VB combined with Trench technology makes it an ideal choice for portable devices and compact circuit designs. Its low on-resistance and high current capability ensure excellent energy efficiency and are suitable for a variety of power management and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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