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MI3112-VB Product details
Back to previous pageProduct introduction：
1. MI3112-VB Product Introduction
MI3112-VB is a high-efficiency **N-channel MOSFET** in a compact **SOT89 package**, designed for low-voltage power management and load switching applications. The MOSFET has a **drain-source voltage (VDS)** rated at 30V and supports **gate-source voltage (VGS)** up to ±20V, making it flexible in a variety of drive circuits. **The threshold voltage (Vth)** is 1.7V, allowing it to turn on quickly and adapt to low-voltage systems. The **on-resistance (RDS(ON))** of MI3112-VB is 30mΩ and 22mΩ at gate drive voltages of 2.5V and 4.5V, respectively, greatly reducing the power consumption of the system. Its **maximum drain current (ID)** is 6.8A, suitable for medium-power electronic devices and modules. Using trench technology, the device can provide high-efficiency performance at higher switching frequencies.
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MI3112-VB is a high-efficiency **N-channel MOSFET** in a compact **SOT89 package**, designed for low-voltage power management and load switching applications. The MOSFET has a **drain-source voltage (VDS)** rated at 30V and supports **gate-source voltage (VGS)** up to ±20V, making it flexible in a variety of drive circuits. **The threshold voltage (Vth)** is 1.7V, allowing it to turn on quickly and adapt to low-voltage systems. The **on-resistance (RDS(ON))** of MI3112-VB is 30mΩ and 22mΩ at gate drive voltages of 2.5V and 4.5V, respectively, greatly reducing the power consumption of the system. Its **maximum drain current (ID)** is 6.8A, suitable for medium-power electronic devices and modules. Using trench technology, the device can provide high-efficiency performance at higher switching frequencies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
2. MI3112-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|------------------------------------------|
| **Package** | SOT89 | Compact package, suitable for space-constrained designs|
| **Channel Type** | Single N-channel | Suitable for efficient switching and current control applications|
| **VDS** | 30V | Upper limit of drain-source voltage, suitable for low-voltage applications|
| **VGS** | ±20V | Gate-source voltage range, improves design flexibility|
| **Vth (threshold voltage)** | 1.7V | Fast turn-on at low voltage|
| **RDS(ON)** | 30mΩ (@VGS=2.5V) | On-resistance under medium and low voltage drive|
| | 22mΩ (@VGS=4.5V) | Improve current efficiency and reduce losses|
| **ID (maximum drain current)** | 6.8A | Supports higher current loads and is suitable for a variety of applications|
| **Technology** | Trench | Improve switching efficiency and reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Meets the temperature requirements of industrial and consumer electronic devices|
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|------------------------------------------|
| **Package** | SOT89 | Compact package, suitable for space-constrained designs|
| **Channel Type** | Single N-channel | Suitable for efficient switching and current control applications|
| **VDS** | 30V | Upper limit of drain-source voltage, suitable for low-voltage applications|
| **VGS** | ±20V | Gate-source voltage range, improves design flexibility|
| **Vth (threshold voltage)** | 1.7V | Fast turn-on at low voltage|
| **RDS(ON)** | 30mΩ (@VGS=2.5V) | On-resistance under medium and low voltage drive|
| | 22mΩ (@VGS=4.5V) | Improve current efficiency and reduce losses|
| **ID (maximum drain current)** | 6.8A | Supports higher current loads and is suitable for a variety of applications|
| **Technology** | Trench | Improve switching efficiency and reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Meets the temperature requirements of industrial and consumer electronic devices|
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Domain and module applications：
III. MI3112-VB Applications and Module Examples
1. **Portable Device Power Management**
MI3112-VB is ideal for power management modules in portable devices such as smartphones, tablets, and laptops. Its low on-resistance helps reduce losses, extend battery life, and improve the overall energy efficiency of the system.
2. **DC-DC Converter**
In a DC-DC buck converter, this MOSFET is able to switch quickly, support high-frequency operation, while ensuring low power consumption and heat loss. This makes it an ideal choice for power modules.
3. **LED Driver**
MI3112-VB is suitable for LED lighting systems, ensuring that LED lamps operate efficiently at a stable current. Its low on-resistance further improves energy efficiency and extends the life of LED lamps.
4. **Motor Control**
This MOSFET can be used in small motor drive circuits, such as drone motors and DC motors in home appliances. Its efficient switching capability helps improve motor operating efficiency and reduce power loss in control systems.
5. **Load switches in consumer electronics**
In consumer electronics such as routers and set-top boxes, MI3112-VB can be used as a load switch to achieve efficient control of the current path, ensure stable system operation and reduce standby power consumption.
6. **Industrial control systems**
MI3112-VB can also be used for low-voltage switching applications in industrial control, such as sensor circuits or switch control modules in automation systems, and can still maintain stable performance in high temperature and complex environments.
Through its efficient current handling and excellent switching performance, MI3112-VB has a wide range of applications in multiple fields, providing system designers with high-performance, low-loss solutions.
1. **Portable Device Power Management**
MI3112-VB is ideal for power management modules in portable devices such as smartphones, tablets, and laptops. Its low on-resistance helps reduce losses, extend battery life, and improve the overall energy efficiency of the system.
2. **DC-DC Converter**
In a DC-DC buck converter, this MOSFET is able to switch quickly, support high-frequency operation, while ensuring low power consumption and heat loss. This makes it an ideal choice for power modules.
3. **LED Driver**
MI3112-VB is suitable for LED lighting systems, ensuring that LED lamps operate efficiently at a stable current. Its low on-resistance further improves energy efficiency and extends the life of LED lamps.
4. **Motor Control**
This MOSFET can be used in small motor drive circuits, such as drone motors and DC motors in home appliances. Its efficient switching capability helps improve motor operating efficiency and reduce power loss in control systems.
5. **Load switches in consumer electronics**
In consumer electronics such as routers and set-top boxes, MI3112-VB can be used as a load switch to achieve efficient control of the current path, ensure stable system operation and reduce standby power consumption.
6. **Industrial control systems**
MI3112-VB can also be used for low-voltage switching applications in industrial control, such as sensor circuits or switch control modules in automation systems, and can still maintain stable performance in high temperature and complex environments.
Through its efficient current handling and excellent switching performance, MI3112-VB has a wide range of applications in multiple fields, providing system designers with high-performance, low-loss solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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