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MI3102-VB Product details

Product introduction:

MI3102-VB Product Introduction

MI3102-VB is a single N-channel MOSFET in SOT89 package, designed for low voltage, high-efficiency circuits. The device supports a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and can operate stably in harsh electronic environments. Its threshold voltage (Vth) is 1.7V, ensuring fast turn-on of the MOSFET at low drive voltage. MI3102-VB has excellent turn-on characteristics, with an on-resistance of 30mΩ at VGS = 2.5V and dropping to 22mΩ at VGS = 4.5V, effectively reducing switching losses and heat generation.

This MOSFET supports a continuous drain current of up to 6.8A, and combined with Trench technology, it achieves efficient power management and excellent switching characteristics, making it very suitable for space-constrained applications that require high performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 30V 1.7V 6.8A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 30V 1.7V 6.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 30V 1.7V 6.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
MI3102-VB Detailed parameter description

| **Parameter** | **Description** |
|-------------------------|------------------------------|
| **Package** | SOT89 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 30mΩ (VGS = 2.5V) |
| **On-resistance (RDS(ON))** | 22mΩ (VGS = 4.5V) |
| **Maximum drain current (ID)** | 6.8A |
| **Technology** | Trench |

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Domain and module applications:

Applications and modules

1. **Power Management Module (PMU)**
MI3102-VB is ideal for DC-DC converters and voltage regulators. The low on-resistance of this MOSFET can improve power conversion efficiency, reduce circuit power consumption, and optimize the performance of the power management unit.

2. **Portable Electronic Devices**
Due to the compact SOT89 package and efficient power handling capabilities of MI3102-VB, it is suitable for miniaturized electronic products such as mobile phones, tablets, and wearable devices to ensure maximum battery life.

3. **LED Drive Circuit**
The fast response characteristics of MI3102-VB make it an ideal switch device in LED drive modules. It can efficiently control the brightness of LEDs and is suitable for applications such as lighting, indicator lights, and backlighting.

4. **Battery protection circuit**
In the charging and discharging control circuit of lithium batteries, MI3102-VB can be used to achieve fast and reliable switching, prevent overcharging and over-discharging, and improve the battery life and safety.

5. **Consumer electronics control module**
This MOSFET can be used in the driving circuit of small household appliances and control modules, such as smart home devices, fans, electric toys, etc., to ensure efficient operation and low power consumption of the equipment.

With its low resistance, high current capability and compact package, MI3102-VB has become the preferred device in the fields of consumer electronics, power management and LED driving, providing reliable and efficient solutions for various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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