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MI10N03-VB Product details
Back to previous pageProduct introduction：
1. **MI10N03-VB Product Introduction**
MI10N03-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high current handling and efficient power management. The device supports a maximum drain-source voltage (VDS) of **30V**, suitable for medium and low voltage circuit applications. Its **threshold voltage (Vth) is 1.7V**, which can respond quickly at a lower gate voltage to ensure efficient switching control. MI10N03-VB provides a low on-resistance of **9mΩ and 7mΩ** at VGS=4.5V and 10V, respectively, which can greatly reduce conduction losses, thereby improving the energy efficiency of the overall circuit. Its **maximum drain current (ID) is 70A**, and it uses **Trench technology** to ensure excellent performance in high-power applications.
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MI10N03-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high current handling and efficient power management. The device supports a maximum drain-source voltage (VDS) of **30V**, suitable for medium and low voltage circuit applications. Its **threshold voltage (Vth) is 1.7V**, which can respond quickly at a lower gate voltage to ensure efficient switching control. MI10N03-VB provides a low on-resistance of **9mΩ and 7mΩ** at VGS=4.5V and 10V, respectively, which can greatly reduce conduction losses, thereby improving the energy efficiency of the overall circuit. Its **maximum drain current (ID) is 70A**, and it uses **Trench technology** to ensure excellent performance in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. **Detailed parameter description**
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 30 | V | Maximum tolerable drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage range|
| Threshold voltage| Vth | 1.7 | V | Minimum voltage for MOSFET to turn on|
| On-resistance(4.5V) | RDS(ON) | 9 | mΩ | On-resistance at VGS=4.5V|
| On-resistance(10V) | RDS(ON) | 7 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 70 | A | Continuous drain current|
| Package type| - | TO252 | - | Surface mount package, suitable for heat dissipation optimization design|
| Technology type| - | Trench | - | Trench technology, reduce conduction loss and improve efficiency|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|-----------------------|--------------|--------------------------|--------------|------------------------------|
| Drain-source voltage| VDS | 30 | V | Maximum tolerable drain-source voltage|
| Gate-source voltage| VGS | ±20 | V | Gate voltage range|
| Threshold voltage| Vth | 1.7 | V | Minimum voltage for MOSFET to turn on|
| On-resistance(4.5V) | RDS(ON) | 9 | mΩ | On-resistance at VGS=4.5V|
| On-resistance(10V) | RDS(ON) | 7 | mΩ | On-resistance at VGS=10V|
| Maximum drain current| ID | 70 | A | Continuous drain current|
| Package type| - | TO252 | - | Surface mount package, suitable for heat dissipation optimization design|
| Technology type| - | Trench | - | Trench technology, reduce conduction loss and improve efficiency|
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Domain and module applications：
3. **Application fields and module examples**
1. **Power management and conversion**
- MI10N03-VB can be widely used in **DC-DC converter** and **switching power supply (SMPS)** designs, and its low on-resistance ensures efficient energy transmission. The device is suitable for **power adapters, routers** and **communication equipment power modules**, where it provides fast and stable current conversion.
2. **Motor drive system**
- This MOSFET performs well in **small motor drives** and **fan control circuits**, and is suitable for home appliances and office equipment such as **printers and air conditioning systems**. It can provide current support up to 70A and ensure low-loss operation to extend system life.
3. **Consumer electronics**
- In the battery management system of electronic devices such as **laptops, smartphones, and tablets**, MI10N03-VB improves battery efficiency and reduces standby power consumption by optimizing the battery charging and discharging process.
4. **Automotive electronics**
- In **automotive power modules** and **in-vehicle electronic systems**, MI10N03-VB can be used for **power doors and windows, LED lighting control** and **seat adjustment systems**, providing reliable current control to ensure the safety and stability of automotive systems.
5. **Industrial control systems**
- The device is also suitable for **industrial automation equipment** and **robot drive** modules. In high current control scenarios, such as **sensor power supply and drive circuits**, MI10N03-VB provides efficient and stable control capabilities.
MI10N03-VB's low on-resistance and high current handling capabilities make it an ideal choice in power management, drive systems and automotive electronics, providing efficient and reliable solutions for various modules.
1. **Power management and conversion**
- MI10N03-VB can be widely used in **DC-DC converter** and **switching power supply (SMPS)** designs, and its low on-resistance ensures efficient energy transmission. The device is suitable for **power adapters, routers** and **communication equipment power modules**, where it provides fast and stable current conversion.
2. **Motor drive system**
- This MOSFET performs well in **small motor drives** and **fan control circuits**, and is suitable for home appliances and office equipment such as **printers and air conditioning systems**. It can provide current support up to 70A and ensure low-loss operation to extend system life.
3. **Consumer electronics**
- In the battery management system of electronic devices such as **laptops, smartphones, and tablets**, MI10N03-VB improves battery efficiency and reduces standby power consumption by optimizing the battery charging and discharging process.
4. **Automotive electronics**
- In **automotive power modules** and **in-vehicle electronic systems**, MI10N03-VB can be used for **power doors and windows, LED lighting control** and **seat adjustment systems**, providing reliable current control to ensure the safety and stability of automotive systems.
5. **Industrial control systems**
- The device is also suitable for **industrial automation equipment** and **robot drive** modules. In high current control scenarios, such as **sensor power supply and drive circuits**, MI10N03-VB provides efficient and stable control capabilities.
MI10N03-VB's low on-resistance and high current handling capabilities make it an ideal choice in power management, drive systems and automotive electronics, providing efficient and reliable solutions for various modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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